Untitled
Abstract: No abstract text available
Text: Technical Data December 2010 3M XYZ-Axis Electrically Conductive Adhesive Transfer Tape 9719 for LSE Substrates and High Temperature Applications Product Description 3M™ XYZ-Axis Electrically Conductive Adhesive Transfer Tape 9719 is a silicone adhesive isotropically conductive
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225-3S-06
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mosfet schematic solenoid driver
Abstract: AN-7515 RFP70N06 ronan
Text: A Combined Single Pulse and Repetitive UIS Rating System Application Note Title N93 ubct A omned ngle lse d epetie S ating sm) utho ) eyords nter- A rating system for Unclamped Inductive Switching in PowerMOS transistors already widely accepted and implemented on Intersil PowerMOS transistor data sheets
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airborn
Abstract: No abstract text available
Text: 4616 VI Super-Power Beam Power Tube 2 -MW SH O RT-P U LSE POWER, 275 -k W LONG-PULSE POWER PU LSE LENGTH TO 2 5 0 0 M ICROSECONDS LOW Ft LAMENT POWER For RF-Pulse The have 4 6 16VI Power WATER COOLED Amplifier is the s a m e as a water s e p a r a t o r .
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275-kW
4616VI
airborn
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74ABT16245
Abstract: MB2245DL
Text: PHILIPS INTERNATIONAL LSE D • 711Dfi2b Q057fl37 DTD ■ PHIN Philip« Semiconductors Advanced BICMOS Products Preliminary specification Dual octal transceivers with direction pins 3-State QUICK REFERENCE DATA FEATURES • 16-bit bidirectional bus interface
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711DfiSb
DDS7fl37
ib245
16-bit
A/-32mA
500mA
74ABT16245
500ns
MB2245DL
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3D21B
Abstract: 3D21WA 3d21b tube 3D21A 3D21WB 3D21B Tubes 3D21 000-microsecond rs tube tung-sol
Text: TUNG-SOL PRODUCT BULLETIN INDUSTRIAL ELECTRON TU BES TYPE 3D21WB SEPTEMBER 1964 P U LSE BEAM POWER TETR OD E DESCRIPTION — The 3D21W B is a rugged, reliable, beam power tetrode designed for pulse service. Featuring the ability to operate under high voltage and high pulse
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3D21WB
3D21WB
3D21A,
3D21B
3D21WA
3d21b tube
3D21A
3D21B Tubes
3D21
000-microsecond
rs tube
tung-sol
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A 673 C2 transistor
Abstract: RF POWER TRANSISTOR NPN vhf BLW30
Text: PH IL IP S INTERNATIONAL Philips Semiconductors_ LSE D m 711002b 00^31 0^ 3bl • PHIN _ Product specification VHF power transistor BLW30 QUICK REFERENCE DATA RF performance at Tr t = 25 °C in a common emitter test circuit.
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711002b
BLW30
OT120
-SOT12Q
MBA451
RA377
A 673 C2 transistor
RF POWER TRANSISTOR NPN vhf
BLW30
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buk418
Abstract: BUK416-200AE lola BUK416-200BE 200AE
Text: PHILIPS INTERNATIONAL LSE D • 7110A2b DDb3fifil 447 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISO TO P envelope. The device is intended for use in
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7110A2b
BUK416-200AE/BE
OT227B
BUK416
-200AE
200BE
BUK41B-S0ME
buk418
BUK416-200AE
lola
BUK416-200BE
200AE
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PDF
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LSE B9
Abstract: No abstract text available
Text: ÛUALITY SEMICONDUCTOR INC LSE QS3384, Q D • 7m3bô03 OOGlMll 355 QS32384 High Speed CMOS 10-bit Bus Switches QS32384 FEATURES/BENEFITS ■ • • ■ • 5£1 switches connect inputs to outputs Direct bus connection when switches on Zero propagation delay 3384
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QS3384,
QS32384
10-bit
24-pin
QS3384
QS32384
MDSL-00032-01
LSE B9
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Untitled
Abstract: No abstract text available
Text: Pulse E lectronics w w w .p u lse e lec tro n ics.c o m ELECTRICAL CHARACTERISTICS AT + 2 5 -C NOTES: UNLESS OTHERWISE SPECIFIED NO. PARAMETER THIS IS A RoHS COMPLIANT COMPONENT/PRODUCT. ALL ENGINEERING CHANGES MUST HAVE PRIOR APPROVAL BY THE DESIGN CENTER.
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40-PIN
TX1261FNL
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gt73
Abstract: LS T73
Text: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZUMT720 ISSUE 1 - SEPTEMBER 1998_ FEATU RES * 500mW POWER DISSIPATION * * * * 1A Peak P u lse C u rren t E x c e lle n t H FE C h a ra c te ristic s U p T o 1A (p u lsed )
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Super323TM
OT323
ZUMT720
500mW
240mi>
750mA
Collecto510
100MHz
gt73
LS T73
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PDF
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M5330
Abstract: A5161
Text: PICO ’S Ultra-Miniature PU LSE Transformers SPECIFICATIONS e ML-TO31O30: • OPERATING TEMPERATURE: All unit* manufactured 1o MIL T 21036 -S5°C to +130°C FEATURES e EXTREM E RESISTANCE TO THERMAL SHOCK e ULTRA MINIATURE SIZE # BUILT TO MIL T-21036 e TERMINALS:
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ML-TO31O30:
T-21036
MIL-STD-202
IL-STD-202,
M-5362
M-5364
M5330
A5161
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Untitled
Abstract: No abstract text available
Text: Pulse Electronics w w w .p u lse e lec tro n ics.c o m NOTES: UNLESS OTHERWISE SPECIFIED 1. 1.110 THIS IS A RoHS COMPLIANT COMPONENT/PRODUCT. ALL ENGINEERING CHANGES MUST HAVE PRIOR APPROVAL BY THE DESIGN CENTER. 2. PLASTIC: THERMOSET PLASTIC MATERIAL WITH
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J-STD-003A
H1664NL
1664N
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lt b3d
Abstract: stk433-870 100-P BUK454-400B T0220AB LD25C
Text: PHILIPS INTERNATIONAL LSE D m 711002b Philips Semiconductors D D b M G S L *1 2 1 « P H I N Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110fl2b
BUK454-400B
T0220AB
lt b3d
stk433-870
100-P
BUK454-400B
LD25C
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PDF
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Untitled
Abstract: No abstract text available
Text: Pulse E lectronics w w w .p u lse e lec tro n ics.c o m NOTES: UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS AT + 2 5 'C 1. NO. THIS IS A RoHS COMPLIANT COMPONENT/PRODUCT. ALL ENGINEERING CHANGES MUST HAVE PRIOR APPROVAL BY THE DESIGN CENTER. 2.
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J-STD-003A
40P0H
T8008FNL
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PDF
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G1VL22C
Abstract: sidac V-I characteristics of SIDAC
Text: SIDACI Absolute Maximum Ratings m Item a Operating Junction Temperature 7M S : Maximum Off-state Voltage ><!# ^ yWiffii Ratings 190 V 1 A T/=98°C , 50H z sine w a v e 8 =180° A 150 tS] a 280 f= 5Hz Ta=25°C , p u lse w id th to= 10/(s, sine w av e 150
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G1VL22C
G1VL22C
Z314-5
sidac
V-I characteristics of SIDAC
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Untitled
Abstract: No abstract text available
Text: Pulse Electronics w w w .p u lse e lec tro n ics.c o m ELECTRICAL CHARACTERISTICS AT +25*C PORT 1 No. THIS IS A RoHS COMPLIANT COMPONENT/PRODUCT. ALL ENGINEERING CHANGES MUST HAVE PRIOR APPROVAL BY THE DESIGN CENTER. 2. 3. PLASTIC: THERMOSET PLASTIC MATERIAL WITH
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T1073QNL
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PDF
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Untitled
Abstract: No abstract text available
Text: Pulse E lectronics w w w .p u lse e lec tro n ics.c o m ELECTRICAL CHARACTERISTICS AT + 2 5 ‘ C NOTES: UNLESS OTHERWISE SPECIFIED 1. NO. THIS IS A RoHS COMPLIANT COMPONENT/PRODUCT. ALL ENGINEERING CHANGES MUST HAVE PRIOR APPROVAL BY THE DESIGN CENTER.
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J-STD-003A
40P0H
T8008QNL
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PDF
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t718
Abstract: t618
Text: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ISSU E 1 - SEPTEM BER 1998 ZUMT718 - FEATU RES 500mW POWER D ISSIPA TIO N * lc CONT 1A * * * * 3 A Peak Pu lse C u rren t Exce lle n t H FE C h a ra cte ristics U p T o 3 A (p u lsed )
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Super323TM
OT323
ZUMT718
500mW
200mQ
-10mA*
-100m
-100mA*
-50mA,
t718
t618
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PDF
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Untitled
Abstract: No abstract text available
Text: LSE T> • QUALITY SEMICONDUCTOR INC 7Hbböü3 DDG121G bS7 QSFCT299T 8-bit Universal Shift Register Q S 54/74FC T299T FEATURES/BENEFITS ■ Pin and function compatible to the 74F299 74FCT 299 and 74FCT299T • CMOS power levels: <7.5 mW static • Available in DIP, ZIP, SOIC, QSOP, LCC
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QSFCT299T
DDG121G
74F299
74FCT
74FCT299T
54/74FC
T299T
MIL-STD-883
QSFCT299T
MDSL-00015-00
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Untitled
Abstract: No abstract text available
Text: S-7247A PULSE/DTMF SWITCHABLE REPERTORY DIALER The S-7247 Series is a C M O S dialer, which generates signals required for D T M F/PU LSE dialing. It has a 10num berx 16-digit repertory memory, 3-number x 16-digit memory for em ergency calling, and 31-digit redial
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S-7247A
S-7247
10num
16-digit
16-digit
31-digit
10-key
579545-MHz
58-MHz
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Untitled
Abstract: No abstract text available
Text: oaitsoo DDMObll SûO H A N A ANALOG DEVICES ANALOG DEVICES INC 10-Bit, 75 MSPS TTLA/DConverter AD9060 LSE D 1.1 Scope. This specification covers the requirements for a flash 10-bit, 75 Msps TTL analog-to-digital converter ADC . Refer to the commercial data sheet for applications information.
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10-Bit,
AD9060
AD9060S
/883B
AD9060T
ADI-M-1000:
E-68A
68-Pin
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PCF200
Abstract: pcf-200 philips 1969 1969 536 triode
Text: PCF20 0 TRIODE-PENTODE Triode-pentode intended for use in television receiv ers;trio d e section as lim it e r, noise detector, A .G .C . am plifier, sync, separator and pu lse-am plifier; pentode section as sound I . F . am plifier and video I . F . am plifier.
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PCF200
PCF200
pcf-200
philips 1969
1969
536 triode
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amplifier blw96
Abstract: BLW96 HF power amplifier PR37 RESISTOR BLW96 philips blw96 PHILIPS 4312 amplifier PR37 RESISTOR pr37 PHILIPS capacitors 0.1 mf A03414
Text: PHILIPS INTERNATIONAL LSE D C3 711DÛ5L QDbBMlE 33b BLW96 PHIN H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated high power industrial and m ilitary transmitting equipm ent in the h.f. and v.h.f. band. The transistor presents
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BLW96
7110fl2b
DDb3453
amplifier blw96
BLW96 HF power amplifier
PR37 RESISTOR
BLW96
philips blw96
PHILIPS 4312 amplifier
PR37
RESISTOR pr37
PHILIPS capacitors 0.1 mf
A03414
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PDF
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Untitled
Abstract: No abstract text available
Text: m- SSI 34P3200 ju im s ifs k m P u lse Detector & Data S y n ch ro n ize r for High D en sity F lo p p y S torage s A TDK Group/Company Preliminary Data June 1993 FEATURES DESCRIPTION Highly Integrated Pulse Detector & Data Synchronizer The SSI 34P3200 is a high performance pulse detector
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34P3200
34P3200
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