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    LS312 Price and Stock

    Abracon Corporation ABLS3-12.000MHZ-D4Y-T

    CRYSTAL 12.0000MHZ 18PF SMD
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    DigiKey ABLS3-12.000MHZ-D4Y-T Cut Tape 8,821 1
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    ABLS3-12.000MHZ-D4Y-T Digi-Reel 8,821 1
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    Mouser Electronics ABLS3-12.000MHZ-D4Y-T 3,299
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    Avnet Abacus ABLS3-12.000MHZ-D4Y-T Reel 12 Weeks 1,000
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    ams OSRAM Group KR-DMLS31.23-5K8L-26-M3W3-700-R18-Z

    LED SYNIOS RED 621NM 2SMD
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    DigiKey KR-DMLS31.23-5K8L-26-M3W3-700-R18-Z Digi-Reel 7,011 1
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    KR-DMLS31.23-5K8L-26-M3W3-700-R18-Z Cut Tape 7,011 1
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    KR-DMLS31.23-5K8L-26-M3W3-700-R18-Z Reel 4,000 4,000
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    ams OSRAM Group KS-DMLS31.23-6J8K-68-M3W3-700-R18-Z

    LED SYNIOS P2720 RED 632NM 2SMD
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    DigiKey KS-DMLS31.23-6J8K-68-M3W3-700-R18-Z Digi-Reel 3,533 1
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    ams OSRAM Group KY-DMLS31.23-8J7L-46-M3W3-700-R18-Z

    LED SYNIOS P2720 YLW 590NM 2SMD
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    DigiKey KY-DMLS31.23-8J7L-46-M3W3-700-R18-Z Cut Tape 2,073 1
    • 1 $1.74
    • 10 $1.108
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    Abracon Corporation ABLS3-12.000MHZ-B4-T

    CRYSTAL 12.0000MHZ 18PF SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ABLS3-12.000MHZ-B4-T Digi-Reel 992 1
    • 1 $1.6
    • 10 $1.394
    • 100 $1.2117
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    ABLS3-12.000MHZ-B4-T Cut Tape 992 1
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    Find more LS312 price and stock on Findchips.com

    LS312 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LS312 Linear Integrated Systems MONOLITHIC DUAL NPN TRANSISTOR Original PDF

    LS312 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


    Original     		PDF LS310 LS311 LS312 LS313 250MHz 250mW 500mW

    LS312

    Abstract: No abstract text available
    Text: LS312 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS312 is a monolithic pair of NPN transistors mounted in a single SOT-23 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.


    Original     		PDF LS312 OT-23 OT-23

    LS312

    Abstract: DIRECT Replacement with Analog Devices mat01
    Text: LS312 SUPER-BETA DUAL NPN TRANSISTOR Linear Systems Offers Direct Alternative for Analog Devices MAT01 The LS312 is a monolithic pair of Super-Beta High Voltage NPN transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring


    Original     		PDF LS312 MAT01 MAT01. MAT01 DIRECT Replacement with Analog Devices

    Untitled

    Abstract: No abstract text available
    Text: LS312 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS312 is a monolithic pair of NPN transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.


    Original     		PDF LS312 LS312 250MHzÂ

    Untitled

    Abstract: No abstract text available
    Text: LS312 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS312 is a monolithic pair of NPN transistors mounted in a single SOIC package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.


    Original     		PDF LS312 LS312 250MHzÂ

    Untitled

    Abstract: No abstract text available
    Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE≥200@10µA-1mA TIGHT VBE MATCHING |VBE1 -VBE1| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC


    Original     		PDF LS310 LS311 LS312 LS313 250MHz 250mW 500mW

    LS312

    Abstract: No abstract text available
    Text: LS312 SUPER-BETA DUAL NPN TRANSISTOR Linear Systems Offers Direct Alternative for Analog Devices MAT01 The LS312 is a monolithic pair of Super-Beta High Voltage NPN transistors mounted in a single TO-71 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring


    Original     		PDF LS312 MAT01 MAT01. MAT01

    Untitled

    Abstract: No abstract text available
    Text: LS312 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS312 is a monolithic pair of NPN transistors mounted in a single TO-71 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.


    Original     		PDF LS312 LS312 250MHzÂ

    ls312

    Abstract: No abstract text available
    Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE≥200@10µA-1mA TIGHT VBE MATCHING |VBE1 -VBE1| = 0.2mV TYP. HIGH fT TO71 & TO78 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 E2 @ 25°C unless otherwise noted Collector


    Original     		PDF LS310 LS311 LS312 LS313 hFE200 250MHz 250mW 500mW LS310: LS311,

    Untitled

    Abstract: No abstract text available
    Text: LS312 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS312 is a monolithic pair of NPN transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.


    Original     		PDF LS312 LS312 250MHzÂ

    Untitled

    Abstract: No abstract text available
    Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE≥200@10µA-1mA TIGHT VBE MATCHING |VBE1 -VBE1| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC


    Original     		PDF LS310 LS311 LS312 LS313 250MHz 250mW 500mW

    LS311

    Abstract: LS310 LS312 LS313
    Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


    Original     		PDF LS310 LS311 LS312 LS313 250MHz 250mW 500mW LS310: LS311, LS312 LS313

    Device Test

    Abstract: 1N4465 MD28F01020 MD27C64-25 Defense/RAD1419A RH1056A LM119
    Text: The most important thing we build is trust ADVANCED ELECTRONIC SOLUTIONS AVIATION SERVICES COMMUNICATIONS AND CONNECTIVITY MISSION SYSTEMS Overview Cobham RAD Solutions 1/1/15 Commercial in Confidence Presenter: Malcolm Thomson Overview • Cobham At A Glance


    Original     		PDF

    J201 Replacement

    Abstract: 2N5019 "direct replacement"
    Text: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation


    Original     		PDF IT124 IT124 250mW 500mW J201 Replacement 2N5019 "direct replacement"

    Ultra High Input Impedance N-Channel JFET Amplifier

    Abstract: "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23
    Text: LS421, LS422, LS423, LS424, LS425, LS426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE IG=0.25pA MAX HIGH GAIN gfs=120µmho MIN LOW POWER OPERATION VGS off =2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		PDF LS421, LS422, LS423, LS424, LS425, LS426 400mW Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23

    "DUAL N-Channel JFET"

    Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
    Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71


    Original     		PDF LSK389 400mW 2SK389 "DUAL N-Channel JFET" Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A

    "DUAL N-Channel JFET"

    Abstract: ultra low igss pA J176 equivalent
    Text: U/SST440,441 MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Direct Replacement for SILICONIX U/SST440 & U/SST441 HIGH CMRR CMRR ≥ 85dB LOW GATE LEAKAGE IGSS ≤ 1pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		PDF U/SST440 U/SST440 U/SST441 500mW "DUAL N-Channel JFET" ultra low igss pA J176 equivalent

    FET U310

    Abstract: U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET
    Text: U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET Linear Integrated Systems FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE J SERIES NF = 2.7dB TO-92 BOTTOM VIEW TO-18 BOTTOM VIEW


    Original     		PDF U/J/SST308 350mW 500mW OT-23 FET U310 U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET

    jfet transistor 2n4391

    Abstract: ls n channel jfet J506 equivalent transistor j109 equivalent Siliconix "low noise jfet" A1 sot23 n-channel J201 N-channel JFET jfet to 92 depletion n-channel mosfet to-92 J201 Replacement
    Text: J/SST108 SERIES LOW NOISE SINGLE Linear Integrated Systems N-CHANNEL JFET SWITCH FEATURES Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A LOW ON RESISTANCE rDS on ≤ 8Ω FAST SWITCHING tON ≤ 4ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated)


    Original     		PDF J/SST108 350mW OT-23 jfet transistor 2n4391 ls n channel jfet J506 equivalent transistor j109 equivalent Siliconix "low noise jfet" A1 sot23 n-channel J201 N-channel JFET jfet to 92 depletion n-channel mosfet to-92 J201 Replacement

    ultra low igss pA mosfet

    Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
    Text: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)


    Original     		PDF LS4117, 2N4117) 2N4117A 300mW 2N4117/A 2N4118 FN4117/A 2N4118A ultra low igss pA mosfet n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel

    Untitled

    Abstract: No abstract text available
    Text: LINEAR SYSTEMS LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES VERY HIGH GAIN hF£ 200 @ 10^A-1mA TIGHT VBE MATCHING 'Vœi-VBaUOÆmVTYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 E2 ABSOLUTE MAXIMUM RATINGS NOTE 1 <3 25°C unless otherwise noted


    OCR Scan     		PDF LS310 LS311 LS312 LS313 250MHz 250mW 500mW

    ic cd 4042

    Abstract: No abstract text available
    Text: LINEAR SYSTEMS LS310 LS311 LS312 LS313 MÖNQLITHIC DUAL NPN Linear Integrated Systems FEA TU R E S VERY HIGH GAIN hpE> 200 a 10^A-1mA TIGHT VBE MATCHING lVBE1-VBE2l = 0 2mV TYP 250MHz TYP. @ 1 mA HIGH fT C1 E1 C2 E2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted)


    OCR Scan     		PDF LS310 LS311 LS312 LS313 250MHz 250mW 500mW ic cd 4042

    TO18 package LED 1300 nm

    Abstract: No abstract text available
    Text: N E C b5E D ELECTRONICS INC • b427525 G03Ö150 777 » N E C E DATA SHEET NEC LIGHT EMITTING DIODE N D L5302L1 ELECTRON DEVICE 1 300 nm OPTICAL FIB ER COMMUNICATIONS InGaAsP LIGHT EMITTING DIODE DESCRIPTION NDL5302L1 is an InGaAsP double heterostructure 1 300 nm LE D . It is designed for medium distance optical fiber communi­


    OCR Scan     		PDF b427525 L5302L1 NDL5302L1 GI-50/125 NDL5302L2 DL5300 DL5302 L5302L1 DL5300P L5302P TO18 package LED 1300 nm

    LS311

    Abstract: sn74ls211 ls212 LS211 SN54LS211 ls213 ls-212 12dq6 18a2g
    Text: TYPES SN 54 L S 2 1 1 , SN54LS212, SN54LS213, SN54LS311, LS312, SN54LS313, SN74LS211, SN74LS212, SN74LS213, SN74LS311, LS312, SN74LS313 RANDOM-ACCESS READ/WRITE MEMORIES « Choice of 16 word by 9 bit or 16 word by 12 bit Configurations • Choice of 3-State or Open-Collector Outputs


    OCR Scan     		PDF SN54LS211, SN54LS212, SN54LS213, SN54LS311, SN54LS312, SN54LS313, SN74LS211, SN74LS212, SN74LS213, SN74LS311, LS311 sn74ls211 ls212 LS211 SN54LS211 ls213 ls-212 12dq6 18a2g