LP2301LT1G
Abstract: SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD
Text: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G VDS= -20V RDS ON , [email protected], [email protected] = 100 mΩ RDS(ON), [email protected], [email protected] = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance
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LP2301LT1G
236AB)
3000/Tape
LP2301LT3G
000/Tape
195mm
150mm
3000PCS/Reel
LP2301LT1G
SC-75
SOT-353 MARKING 8v
619 SOT 23
sot-23 single diode mark PD
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G S-LP2301LT1G VDS= -20V RDS ON , [email protected], [email protected] = 100 mΩ RDS(ON), [email protected], [email protected] = 150 mΩ Features 3 Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
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Original
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PDF
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LP2301LT1G
S-LP2301LT1G
236AB)
AEC-Q101
OT-23
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