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    LOW-POWER SILICON NPN Search Results

    LOW-POWER SILICON NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    LOW-POWER SILICON NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD560

    Abstract: nec 2sd560 2sd560 equivalent NEC RELAY
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is


    Original     		PDF 2SD560 2SD560 O-220AB O-220AB) nec 2sd560 2sd560 equivalent NEC RELAY

    MJE200

    Abstract: MJE210G 1N5825 MJE200G MJE210 MJE210T MJE210TG MSD6100 to225
    Text: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features http://onsemi.com 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON


    Original     		PDF MJE200 MJE210 MJE200/D MJE210G 1N5825 MJE200G MJE210T MJE210TG MSD6100 to225

    MJE243G

    Abstract: to225 PD15120 MJE253 MJE253G MJE243 to-225 pd 242
    Text: MJE243 - NPN, MJE253 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON


    Original     		PDF MJE243 MJE253 O-225 MJE243G to225 PD15120 MJE253G to-225 pd 242

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL  DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier.  FEATURES * Low frequency power amplifier 


    Original     		PDF 2SD667 2SD667 2SD667L-x-T9N-B 2SD667G-x-T9N-B 2SD667L-x-T9N-K 2SD667G-x-T9N-K O-92NL QW-R211-019

    290A transistor

    Abstract: 2SD667 transistor 2sd667
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL „ DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. „ FEATURES * Low frequency power amplifier * Halogen Free


    Original     		PDF 2SD667 2SD667 2SD667G-T9N-B 2SD667G-T9N-K O-92NL QW-R211-019 290A transistor transistor 2sd667

    MJE243

    Abstract: MJE243G 200 watts audio amp power transistors circuit diagram MJE243-D 1N5825 MJE253 MJE253G MSD6100
    Text: MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS


    Original     		PDF MJE243 MJE253 O-225 MJE243/D MJE243G 200 watts audio amp power transistors circuit diagram MJE243-D 1N5825 MJE253G MSD6100

    MJE243G

    Abstract: MJE-253 MJE243 MJE253 1N5825 MJE253G MSD6100 200 watts audio amp power transistors circuit diagram mje253 transistor
    Text: MJE243 − NPN, MJE253 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON


    Original     		PDF MJE243 MJE253 O-225d MJE243/D MJE243G MJE-253 1N5825 MJE253G MSD6100 200 watts audio amp power transistors circuit diagram mje253 transistor

    MJE200G

    Abstract: MJE200 MJE210 MJE210G MJE210T MJE210TG to225
    Text: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS, 15 WATTS


    Original     		PDF MJE200 MJE210 MJE200G MJE210G MJE210T MJE210TG to225

    290A transistor

    Abstract: transistor 2sd667 2SD667
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL „ DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. „ FEATURES * Low frequency power amplifier „ ORDERING INFORMATION


    Original     		PDF 2SD667 2SD667 2SD667L-T9N-B 2SD667G-T9N-B 2SD667L-T9N-K 2SD667G-T9N-K O-92NL QW-R211-019 290A transistor transistor 2sd667

    Untitled

    Abstract: No abstract text available
    Text: MJE243G NPN , MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON


    Original     		PDF MJE243G MJE253Gâ MJE243/D

    2SC4554

    Abstract: 2sc4554 nec
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4554 NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING The 2SC4554 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a low power dissipation.


    Original     		PDF 2SC4554 2SC4554 2sc4554 nec

    Untitled

    Abstract: No abstract text available
    Text: MJE243G NPN , MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON


    Original     		PDF MJE243G MJE253Gâ MJE243/D

    1N5825

    Abstract: MJE200 MJE200G MJE210 MJE210G MJE210T MJE210TG MSD6100
    Text: MJE200 − NPN, MJE210 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON


    Original     		PDF MJE200 MJE210 MJE200/D 1N5825 MJE200G MJE210G MJE210T MJE210TG MSD6100

    NEC 2501

    Abstract: 2SC4536-T1 ic nec 2501 2501 NEC 2SC4536 nec RF package SOT89 qs marking sot-89
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4536 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features


    Original     		PDF 2SC4536 2SC4536 OT-89) PU10338EJ01V0DS NEC 2501 2SC4536-T1 ic nec 2501 2501 NEC nec RF package SOT89 qs marking sot-89

    PNP Transistor DPAK

    Abstract: No abstract text available
    Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS


    Original     		PDF MJD200 MJD210 PNP Transistor DPAK

    MJD200RL

    Abstract: 1N5825 MJD200 MJD200G MJD200RLG MJD200T4 MJD210 MSD6100
    Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS


    Original     		PDF MJD200 MJD210 MJD200/D MJD200RL 1N5825 MJD200 MJD200G MJD200RLG MJD200T4 MJD210 MSD6100

    Untitled

    Abstract: No abstract text available
    Text: MJE200G NPN , MJE210G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • • • • • 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON


    Original     		PDF MJE200Gâ MJE210Gâ MJE200/D

    1N5825

    Abstract: MJD200 MJD210 MSD6100
    Text: ON Semiconductort NPN Complementary Plastic Power Transistors MJD200 PNP MJD210 NPN/PNP Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS . . . designed for low voltage, low–power, high–gain audio amplifier


    Original     		PDF MJD200 MJD210 r14525 MJD200/D 1N5825 MJD200 MJD210 MSD6100

    1N5825

    Abstract: MJD200 MJD210 MSD6100
    Text: ON Semiconductort NPN Complementary Plastic Power Transistors MJD200 PNP MJD210 NPN/PNP Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS . . . designed for low voltage, low–power, high–gain audio amplifier


    Original     		PDF MJD200 MJD210 r14525 MJD200/D 1N5825 MJD200 MJD210 MSD6100

    Untitled

    Abstract: No abstract text available
    Text: MJE200 NPN , MJE210 (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • • • • • 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON


    Original     		PDF MJE200 MJE210 MJE200/D

    2SD1481

    Abstract: DSA00108835
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1481 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip C-to-B Zener diode for surge voltage absorption


    Original     		PDF 2SD1481 2SD1481 DSA00108835

    2SD2165

    Abstract: NEC marking b
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and


    Original     		PDF 2SD2165 2SD2165 NEC marking b

    MJE130

    Abstract: mje135 MJE230 MJE220 MJE221 MJE222 MJE225 MJE231 MJE235 200 watts audio amp power transistors pnp
    Text: MJE220 thru MJE225 NPN SILICON MJE230 thru MJE235 PNP COMPLEMENTARY PLASTIC SILICON POWER TRANSISTORS 4 AMPERE POWER TRANSISTORS . . . designed for low power audio amplifier and low current, high­ speed switching applications. • COMPLEMENTARY SILICON


    OCR Scan     		PDF MJE220 MJE225 MJE230 MJE235 MJE220/MJE222 MJE230/MJE232 MJE223/MJE225 MJE233/MJE235 MJE221 MJE222 MJE130 mje135 MJE231 200 watts audio amp power transistors pnp

    MMT806

    Abstract: MMT808
    Text: MMT806 SILICON M ICROM INIATURE NPN SILICON ANNULAR TRANSISTOR MICRO POWER SER IES NPN SILICON SWITCHING TRANSISTOR . . . designed for high-speed, low-power switching circuits. • DC Current Gain @ Ultra Low C urrent— • High Current'Gain — Bandwidth Product —


    OCR Scan     		PDF MMT806 MMT808 100MAdc, 10/JAdc) 10MAdc, MMT806 MMT808