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    LOW-POWER GERMANIUM NPN Search Results

    LOW-POWER GERMANIUM NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    LOW-POWER GERMANIUM NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nte102

    Abstract: NTE103 vpt 20 germanium transistors NPN NTE10-3
    Text: NTE102 PNP & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage:


    Original     		PDF NTE102 NTE103 200mV nte102 NTE103 vpt 20 germanium transistors NPN NTE10-3

    BFP650

    Abstract: BGA420 T-25
    Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology


    Original     		PDF BFP650 OT343 BFP650 BGA420 T-25

    RBS 3000

    Abstract: BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON
    Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology


    Original     		PDF BFP650 OT343 RBS 3000 BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON

    RBS 3000

    Abstract: 1g28
    Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology


    Original     		PDF BFP650 OT343 RBS 3000 1g28

    germanium transistors NPN

    Abstract: BFP420F BFP650F GMA marking marking r5s
    Text: BFP650F NPN Silicon Germanium RF Transistor* • For medium power amplifiers and driver stages 3 • High OIP 3 and P-1dB 2 4 1 • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz • 70 GHz fT - Silicon Germanium technology


    Original     		PDF BFP650F BFP650may germanium transistors NPN BFP420F BFP650F GMA marking marking r5s

    Untitled

    Abstract: No abstract text available
    Text: BFP650F NPN Silicon Germanium RF Transistor* • For medium power amplifiers and driver stages 3 • High OIP 3 and P-1dB 2 4 1 • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz • 70 GHz fT - Silicon Germanium technology


    Original     		PDF BFP650F

    nec 2501

    Abstract: NESG240034 ic nec 2501 2501 nec
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG240034 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD 34 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.


    Original     		PDF NESG240034 NESG240034 NESG240034-A M8E0904E nec 2501 ic nec 2501 2501 nec

    nec 2501

    Abstract: ic nec 2501 2501 NEC NESG220034
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG220034 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD 34 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.


    Original     		PDF NESG220034 NESG220034 NESG220034-A M8E0904E nec 2501 ic nec 2501 2501 NEC

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,


    Original     		PDF NESG2101M16 NESG2101M16 PU10395EJ03V0DS

    transistor T1J

    Abstract: NESG2101M05-A transistor T1J 4pin M05 MARKING
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,


    Original     		PDF NESG2101M05 NESG2101M05-A NESG2101M05-TERISTICS PU10190EJ02V0DS transistor T1J transistor T1J 4pin M05 MARKING

    NESG2101M16

    Abstract: NESG2101M16-T3 NESG2101M16-T3-A
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification


    Original     		PDF NESG2101M16 M8E0904E NESG2101M16 NESG2101M16-T3 NESG2101M16-T3-A

    NESG2101M16

    Abstract: NESG2101M16-T3
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification


    Original     		PDF NESG2101M16 NESG2101M16 NESG2101M16-T3

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification


    Original     		PDF NESG2101M16 NESG2101M16 M8E0904E

    Germanium power

    Abstract: BFR705L3RH TP5045
    Text: BFR705L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor for low current operation 3 • Ideal for low power consumption LNA design 1 2 • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more


    Original     		PDF BFR705L3RH Germanium power BFR705L3RH TP5045

    transistor T1J

    Abstract: NESG2101M05-T1 NESG2101M05
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification


    Original     		PDF NESG2101M05 PU10190EJ02V0DS transistor T1J NESG2101M05-T1 NESG2101M05

    transistor T1J

    Abstract: T1J marking
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification


    Original     		PDF NESG2101M05 NESG2101M05 transistor T1J T1J marking

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification


    Original     		PDF NESG2101M16 PU10395EJ01V0DS

    transistor 1T

    Abstract: BFP650 equivalent
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4  For high power amplifiers  Ideal for low phase noise oscilators  Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz  Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343 Jul-01-2003 transistor 1T BFP650 equivalent

    BFP650 noise figure

    Abstract: data sheet germanium diode germanium transistors NPN npn germanium BFP650
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4  For high power amplifiers  Ideal for low phase noise oscilators  Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz  Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343 curr26 Mar-27-2003 BFP650 noise figure data sheet germanium diode germanium transistors NPN npn germanium BFP650

    gummel

    Abstract: oscilators BFP650
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343 Oct-13-2003 gummel oscilators BFP650

    80mAF

    Abstract: 6069 marking
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343 Aug-16-2004 80mAF 6069 marking

    2n1304

    Abstract: Low-Power Germanium NPN
    Text: 2N1304 Ge NPN Lo-Pwr BJT 2.90 Transistors Bipolar Germanium NPN Low-Power Tra. Page 1 of 1 Enter Your Part # Home Part Number: 2N1304 Online Store 2N1304 Diodes Ge N PN L o -Pw r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original     		PDF 2N1304 2N1304 com/2n1304 Low-Power Germanium NPN

    BFP650

    Abstract: No abstract text available
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343 Jan-08-2004 BFP650

    PH marking code

    Abstract: No abstract text available
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343 PH marking code