M203
Abstract: ITAR ha6006
Text: HBH 10.0 – 13.0 GHz Low Noise Amplifier PRELIMINARY Microwave GmbH HA6006 General Description The HA6006 is a integrated GaAs high gain, low noise amplifier covering the frequency range from 10GHz to 13GHz. Low noise, high gain and high output power makes this device an ideal choice as an input amplifier
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HA6006
HA6006
10GHz
13GHz.
M203
ITAR
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ha6007
Abstract: No abstract text available
Text: HBH 10.0 – 13.0 GHz Variable Gain Amplifier PRELIMINARY Microwave GmbH HA6007 General Description The HA6007 is a integrated GaAs high gain, low noise amplifier covering the frequency range from 10GHz to 13GHz. Low noise, high gain and high output power makes this device an ideal choice as an input amplifier
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HA6007
HA6007
10GHz
13GHz.
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telemetry block diagram
Abstract: HFA3600 HFA3600IB HFA3600IB96 IS-54 LINE FILTER FOR 900MHZ ha3600 HP346B
Text: HFA3600 TM Data Sheet May 1999 FN3655.4 Low-Noise Amplifier/Mixer Features The HFA3600 is a silicon Low-Noise Amplifier with high performance characteristics allowing the design of very sensitive, wide dynamic-range 900MHz receivers with minimal external components.
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HFA3600
FN3655
HFA3600
900MHz
900MHz
telemetry block diagram
HFA3600IB
HFA3600IB96
IS-54
LINE FILTER FOR 900MHZ
ha3600
HP346B
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telemetry block diagram
Abstract: LNA for WIRELESS APPLICATIONS FROM 100 MHz - 800Mhz HFA3600 HFA3600IB HFA3600IB96 IS-54
Text: HFA3600 Data Sheet May 1999 File Number 3655.4 Low-Noise Amplifier/Mixer Features The HFA3600 is a silicon Low-Noise Amplifier with high performance characteristics allowing the design of very sensitive, wide dynamic-range 900MHz receivers with minimal external components.
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HFA3600
HFA3600
900MHz
900MHz
telemetry block diagram
LNA for WIRELESS APPLICATIONS FROM 100 MHz - 800Mhz
HFA3600IB
HFA3600IB96
IS-54
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Noise dc 12
Abstract: power supply 12v
Text: JXWBLA-T-7000-10000-30 7~10GHz Low Noise Amplifier Test report is for reference only. TEST REPORT For JXWBLA-T-7000-10000-30 Page 1 JXWBLA-T-7000-10000-30 7~10GHz Low Noise Amplifier Technical Specification 7-10 Frequency Range GHz Gain(dB) 30 min Pout@1dB(dBm)
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JXWBLA-T-7000-10000-30
10GHz
DC/300
2V/170mA
-30dBm
Noise dc 12
power supply 12v
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NJG1148MD7
Abstract: No abstract text available
Text: NJG1148MD7 5GHz BAND LOW NOISE AMPLIFIER GaAs MMIC • GENERAL DESCRIPTION NJG1148MD7 is a 5GHz band low noise amplifier GaAs MMIC designed for wireless LAN, wireless image transmission and Intelligent Transport System. The NJG1148MD7 has a LNA pass-through function to select
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NJG1148MD7
NJG1148MD7
95GHz,
EQFN14-D7
95GHz
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NJG1148MD7
Abstract: No abstract text available
Text: NJG1148MD7 5GHz BAND LOW NOISE AMPLIFIER GaAs MMIC • GENERAL DESCRIPTION NJG1148MD7 is a 5GHz band low noise amplifier GaAs MMIC designed for wireless LAN, wireless image transmission and Intelligent Transport System. The NJG1148MD7 has a LNA pass-through function to select
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NJG1148MD7
95GHz,
EQFN14-D7
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OC106
Abstract: No abstract text available
Text: NJG1148MD7 5GHz BAND LOW NOISE AMPLIFIER GaAs MMIC • GENERAL DESCRIPTION NJG1148MD7 is a 5GHz band low noise amplifier GaAs MMIC designed for wireless LAN, wireless image transmission and Intelligent Transport System. The NJG1148MD7 has a LNA pass-through function to select
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NJG1148MD7
95GHz,
EQFN14-D7
NJG1148MD7
95GHz
OC106
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Untitled
Abstract: No abstract text available
Text: CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description VD1 VD2 The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
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CHA3666
6-17GHz
CHA3666
6-17GHz
26dBm
17dBm
DSCHA3666-8108
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CHA3666-99F
Abstract: CHA3666 CHA3666-99F/00
Text: CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description VD1 VD2 The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
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CHA3666
6-17GHz
CHA3666
6-17GHz
26dBm
17dBm
DSCHA3666-8108
CHA3666-99F
CHA3666-99F/00
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CHA3666-99F
Abstract: CHA3666-99F/00 CHA3666 8108
Text: CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description VD1 VD2 The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
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CHA3666
6-17GHz
CHA3666
6-17GHz
26dBm
17dBm
DSCHA3666-8108
CHA3666-99F
CHA3666-99F/00
8108
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Untitled
Abstract: No abstract text available
Text: CHA3656-QAG 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3656-QAG is a two-stage selfbiased wide band monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial
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CHA3656-QAG
8-17GHz
CHA3656-QAG
A3656
17GHz
24dBm
14dBm
16L-QFN3Xse
DSCHA3656-QAG3156
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Untitled
Abstract: No abstract text available
Text: CHA2063 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges
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CHA2063
7-13GHz
CHA2063
7-13GHz
8-13GHz
20dBm
DSCHA20636354
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nf46
Abstract: CHA3666 CHA3666-SNF
Text: CHA3666-SNF 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in hermetic package Description The CHA3666-SNF is a two-stage selfbiased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via
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CHA3666-SNF
8-16GHz
CHA3666-SNF
8-16GHz
24dBm
16dBm
12L-Glass/metal
DSCHA3666-SNF7208
nf46
CHA3666
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CHA3666
Abstract: CHA3666-SNF
Text: CHA3666-SNF 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in hermetic package Description The CHA3666-SNF is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
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CHA3666-SNF
8-16GHz
CHA3666-SNF
8-16GHz
24dBm
16dBm
12L-Glass/metal
DSCHA3666-SNF0197
CHA3666
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CHA3666-QAG
Abstract: AN0017
Text: CHA3666-QAG RoHS COMPLIANT 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3666-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
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CHA3666-QAG
8-17GHz
CHA3666-QAG
6-17GHz
26dBm
16dBm
16L-QFN3X3
DSCHA3666-QAG8108
AN0017
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Untitled
Abstract: No abstract text available
Text: CHA3666-QAG RoHS COMPLIANT 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3666-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
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CHA3666-QAG
8-17GHz
CHA3666-QAG
6-17GHz
26dBm
16dBm
16L-QFN3X3
DSCHA3666-QAG8108
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CHA3666-QAG
Abstract: AN0017
Text: CHA3666-QAG RoHS COMPLIANT 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3666-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
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CHA3666-QAG
8-17GHz
CHA3666-QAG
6-17GHz
26dBm
16dBm
16L-QFN3X3
DSCHA3666-QAG8108
AN0017
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M1555
Abstract: 04CS10N GRM1555C1H1R8CZ01D ATF-551M4 GRM1885C1H103K 04CS2N0 ATF551M4 connector ubs 0402CS-10NXJBW 0402CS-2N0XJBW
Text: A 3.5GHz WiMAX Low Noise Amplifier for CPE and BTS Application Using ATF-551M4 Application Note 5328 Introduction Avago Technologies’ ATF-551M4 is a low noise enhancement mode PHEMT designed for use in low cost commercial application in the VHF through 10GHz frequency
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ATF-551M4
ATF-551M4
10GHz
AV02-0323EN
M1555
04CS10N
GRM1555C1H1R8CZ01D
GRM1885C1H103K
04CS2N0
ATF551M4
connector ubs
0402CS-10NXJBW
0402CS-2N0XJBW
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MCH4014
Abstract: ENA1921 8948 a19211
Text: MCH4014 Ordering number : ENA1921 SANYO Semiconductors DATA SHEET MCH4014 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)
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ENA1921
MCH4014
10GHz
020A-002
A1921-10/10
MCH4014
ENA1921
8948
a19211
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TL 0621
Abstract: No abstract text available
Text: MCH4016 Ordering number : ENA1922 SANYO Semiconductors DATA SHEET MCH4016 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)
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ENA1922
MCH4016
10GHz
020A-003
A1922-10/10
TL 0621
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CPH6021
Abstract: FT10G V 7470
Text: CPH6021 Ordering number : ENA1910 SANYO Semiconductors DATA SHEET CPH6021 PNP Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)
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CPH6021
ENA1910
10GHz
A1910-10/10
CPH6021
FT10G
V 7470
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Untitled
Abstract: No abstract text available
Text: CPH6021 Ordering number : ENA1910A SANYO Semiconductors DATA SHEET CPH6021 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)
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CPH6021
ENA1910A
10GHz
A1910-12/12
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Untitled
Abstract: No abstract text available
Text: MCH4015 Ordering number : ENA1911 SANYO Semiconductors DATA SHEET MCH4015 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)
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MCH4015
ENA1911
10GHz
A1911-9/9
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