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    LOW NOISE TRANSISTORS VHF Search Results

    LOW NOISE TRANSISTORS VHF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    LOW NOISE TRANSISTORS VHF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT143 L03

    Abstract: L0523 D2030 L03 sot143 yg 2025 microstripline FR4 AT-30511 AT-31011 W02 SOT23 ATF-10236
    Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note AN 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors offer state-ofthe-art noise figure and gain performance with low power


    Original     		PDF 5964-3854E SOT143 L03 L0523 D2030 L03 sot143 yg 2025 microstripline FR4 AT-30511 AT-31011 W02 SOT23 ATF-10236

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    HP346A

    Abstract: D2030 5091-9311E 47433 W02 SOT23 AT-30511 AT-31011 AT-32033 ATF-10236 Hewlett-Packard transistor microwave
    Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors


    Original     		PDF

    yg 2025

    Abstract: HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532
    Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors


    Original     		PDF 5964-3854E yg 2025 HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    SOT R23

    Abstract: 2SC3356 marking R24 r25 q
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, z Low Noise and High Gain z High Power Gain 3. COLLECTOR UHF and CATV band.


    Original     		PDF OT-323 OT-323 2SC3356 width350s, SOT R23 2SC3356 marking R24 r25 q

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR


    Original     		PDF OT-323 OT-323 2SC3356

    NTE2402

    Abstract: No abstract text available
    Text: NTE2402 NPN & NTE2403 (PNP) Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier Description: The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT–23 type surface mount package designed for use in UHF and microwave amplifiers in thick and thin–film circuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. These transistors feature low intermodulation distortion and high power gain. Due to very high transition frequency, these devices also have excellent wideband properties and low noise up to high frequencies.


    Original     		PDF NTE2402 NTE2403 500MHz, 25MHz NTE2402

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR µPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The µPA811T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS amplify low noise in the VHF band to the UHF band.


    Original     		PDF PA811T 2SC4228) PA811T

    lem 812

    Abstract: NF 936 2SC4228 KB MARKING
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band.


    Original     		PDF PA800T PA800T lem 812 NF 936 2SC4228 KB MARKING

    L-07C1N8ST

    Abstract: atf55143 fet curtice nonlinear model ATF-55143 sdars AN-1222 ATF-551M4 ATF pHEMT 250R07C8R2FV4T
    Text: ATF-55143 Low Noise 2300 MHz Amplifier Application Note 5294 Introduction Description A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high linearity. Besides having a very low typical noise figure


    Original     		PDF ATF-55143 ATF-55143 AV01-0376EN L-07C1N8ST atf55143 fet curtice nonlinear model sdars AN-1222 ATF-551M4 ATF pHEMT 250R07C8R2FV4T

    PT 8519

    Abstract: PT 4207 2SC4227 marking R34
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD The µPA802T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band.


    Original     		PDF PA802T PA802T PT 8519 PT 4207 2SC4227 marking R34

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD The µPA802T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band.


    Original     		PDF PA802T PA802T

    nec 2532

    Abstract: lem 4202 NEC 2504 free ic 2034 2SC4228 NEC JAPAN 282 110 01 ic 4521 NEC+2532
    Text: DATA SHEET SILICON TRANSISTOR µPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The µPA811T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS amplify low noise in the VHF band to the UHF band.


    Original     		PDF PA811T 2SC4228) PA811T nec 2532 lem 4202 NEC 2504 free ic 2034 2SC4228 NEC JAPAN 282 110 01 ic 4521 NEC+2532

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR


    Original     		PDF OT-23-3L OT-23-3L 2SC3356

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The µPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS amplify low noise in the VHF band to the UHF band.


    Original     		PDF PA812T 2SC4227) PA812T PA812T-T1

    MA42056

    Abstract: 42056
    Text: Silicon Low Noise Bipolar Transistors MA42050 Series Description Nominal fT - 1.8 GHz Nominal Current Range - 1 to 5 mA Iq Max. - 40 mA Frequency Range - 10 MHz to 600 GHz Geometry - 55 The MA42050 series of NPN silicon planar transistors will give high gain and low noise figure characteristics in VHF


    OCR Scan     		PDF MA42050 MA42051 MA42052 MA42056 11unless MIL-STD-750 42056

    2N6665

    Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
    Text: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed


    OCR Scan     		PDF SL42E05 M220S 0001fl11 2N6665 MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953

    MA42181-510

    Abstract: 2N5054 2N6665-509
    Text: M a n A M P icom pany General Purpose Low Noise Bipolar Transistors V3.00 Case Styles Features • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed


    OCR Scan     		PDF

    TO92 package

    Abstract: ma42217
    Text: Silicon Low Noise Bipolar Transistors MA42217 and MA42218 Series Description Nominal fT = 1.8 GHz Nominal Current Range - 1 to 5 mA Iq Max. = 50 mA Frequency = 10 — 600 MHz Geometry = 55 The MA42217 and MA42218 NPN silicon planar bipolar transistors are designed to provide low noise figure and


    OCR Scan     		PDF MA42217 MA42218 TO92 package

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn

    ZTX3866

    Abstract: ZTX325 ZTX327 2N2708 Transistor 2N3866 2N3866 2N4427 2N918 BFS17 BFY90
    Text: R.F. TRANSISTORS AND DIODES TABLE 1 : NPN RF TRANSISTORS TO 1 WATT The transistors shown in this table are suitable for use in a wide range of high frequency applications where high fT, low noise and low intermodulation distortion features are required. Typical applications include UHF/VHF amplifiers, communications equipments, domestic and automotive


    OCR Scan     		PDF 2N3866 ZTX327 ZTX3866 MPSH10 OT-23 2N4427 2N2708 BFY90 ZTX325 BFS17 Transistor 2N3866 2N918

    transistor K 2056

    Abstract: MA42120 K 2056 transistor 2N6665 MA42001-509 2N5054 2n5651 MA42005 MA-42120 2N2857 Model
    Text: /yfaom Silicon Low Noise Bipolar T ransistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz


    OCR Scan     		PDF

    nec d 588

    Abstract: NEC 2532 NEC 2504
    Text: DATA SHEET SILICON TRANSISTOR uPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The /xPA811T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS am plify low noise in the VHF band to the UHF band.


    OCR Scan     		PDF uPA811T 2SC4228) /xPA811T nec d 588 NEC 2532 NEC 2504