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    LOW FREQUENCY POWER BIPOLAR NPN TRANSISTOR TO3 Search Results

    LOW FREQUENCY POWER BIPOLAR NPN TRANSISTOR TO3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    LOW FREQUENCY POWER BIPOLAR NPN TRANSISTOR TO3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power BJT pnp

    Abstract: JANS2N7373 NPN Power BJT 100v JANS2N5154 JANS2N5153 power transistor bjt 100 a 2N7395 smps 500 watt 500 WATT smps JANS2N7372
    Text: Fall 1998/Winter 1999 Bipolar Transistors in Space bipolar chip types that are MIL qualified in older TO-3’s and have a radiation tolerant structures, can be put in more reliable TO-254’s. Examples of this are the 2N6338 NPN and 2N6437(PNP) that are complementary 100V, 200W


    Original     		PDF 1998/Winter O-254' 2N6338 2N6437 PP6338M PP6437M 2500mA) 2N7272 FRL9130D power BJT pnp JANS2N7373 NPN Power BJT 100v JANS2N5154 JANS2N5153 power transistor bjt 100 a 2N7395 smps 500 watt 500 WATT smps JANS2N7372

    2SC6144

    Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
    Text: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.


    Original     		PDF R0039A 52P6215E 2SC6144 IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114

    2n3055 motorola

    Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
    Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,


    Original     		PDF 1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046

    laser range finder schematics

    Abstract: schematic satellite finder thyristor cdi Notebook lcd inverter schematic PNP SILICON TRANSISTORS MIL GRADE JANTXV 2N5666 1n5819 trr MICROSEMI 2N2907A scr firing circuit for dc servo driver cdi dc/dc
    Text: power conditioning More than solutions, enabling possibilities Discrete Semiconductors Powermite Products Power Schottkys/Rectifiers MOSFETs Bipolar Transistors Silicon Controlled Rectifiers Battery Bypass Circuits Switching Power and Conditioning Signals


    Original     		PDF

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


    Original     		PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    reverse-conducting thyristor

    Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
    Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate


    Original     		PDF MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor

    P-Channel IGBT

    Abstract: PTIGBT 600V 10A RUF resistor calculation of IGBT snubber mosfet 8A 900V TO-220 thyristor 5a 600v cross reference Drive Base BJT N-Channel jfet 100V depletion vtom Trench MOSFET Termination Structure
    Text: Application Note 9016 February, 2001 IGBT Basics 1 by K.S. Oh CONTENTS 1. Introduction. 2. Device structure and operation .


    Original     		PDF

    100 amp npn darlington power transistors

    Abstract: NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP
    Text: 1995-2012.qxp:QuarkCatalogTempNew 9/11/12 8:56 AM Page 1995 25 Transistors and MOSFETs Silicon Bipolar Transistors Collector to Base V Collector to Emitter (V) Emitter to Base (V) Typical Fwd. Current Gain NPN NPN NPN NPN NPN NPN NPN NPN NPN 0.5 15.0 4.0


    Original     		PDF NTE289A¸ NTE385¸ NTE184¸ NTE196¸ NTE181¸ NTE175¸ NTE311¸ NTE85¸ NTE287¸ NTE382 100 amp npn darlington power transistors NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP

    d5017

    Abstract: 3DD5017 VCBO-1200V Jilin Sino-Microelectronics of transistor 6V 1A
    Text: Case-rated bipolar transistor for type 3DD5017 for low frequency amplification R 3DD5017 FEATURES HIGH BREAKDOWN VOLTAGE:Vcbo=1200V LOW SATURATION VOLTAGE:Vce sat =0.5V(max.) HIGH SWITCHING SPEED:tf=0.3 S(max.) HIGH RELIABILITY TO-3P(H)IS APPLICATIONS SWITCHING POWER SUPPLY FOR COLOR TV


    Original     		PDF 3DD5017 3DD5017 D5017 d5017 VCBO-1200V Jilin Sino-Microelectronics of transistor 6V 1A

    d2109

    Abstract: 3DD2109 D-2109 Jilin Sino-Microelectronics jilin TO-3P
    Text: Case-rated bipolar transistor for type 3DD2109 for low frequency amplification R 3DD2109 FEATURES HIGH BREAKDOWN VOLTAGE:Vcbo=900V LOW SATURATION VOLTAGE:Vce sat =0.5V(max.) HIGH SWITCHING SPEED:tf=0.3 S(max.) HIGH RELIABILITY TO-3P(H)IS APPLICATIONS SWITCHING POWER SUPPLY FOR COLOR TV


    Original     		PDF 3DD2109 3DD2109 D2109 d2109 D-2109 Jilin Sino-Microelectronics jilin TO-3P

    TRANSISTOR D2101

    Abstract: D2101 3DD2101 3DD2109 Transistors Bipolar NPN TO-3P
    Text: Case-rated bipolar transistor for type 3DD2109 for low frequency amplification R 3DD2101 FEATURES HIGH BREAKDOWN VOLTAGE:Vcbo=900V LOW SATURATION VOLTAGE:Vce sat =0.5V(max.) HIGH SWITCHING SPEED:tf=0.5 S(max.) HIGH RELIABILITY TO-3P(H)IS APPLICATIONS SWITCHING POWER SUPPLY FOR COLOR TV


    Original     		PDF 3DD2109 3DD2101 3DD2101 D2101 TRANSISTOR D2101 D2101 Transistors Bipolar NPN TO-3P

    bfr96 equivalent

    Abstract: MCE544 MC1343 TRANSISTOR PNP 5GHz transistor 5ghz pnp MC1333 Transistor MRF237 MRF544 microsemi MRF237 5GHz PNP transistor
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz


    Original     		PDF MRF544 To-39 Emitter-BasF545 MRF544 MMBR5031LT1/2N5031 MRF581/MRF5812R1/BFR96 400mA 200mA 14dB/200MHz bfr96 equivalent MCE544 MC1343 TRANSISTOR PNP 5GHz transistor 5ghz pnp MC1333 Transistor MRF237 microsemi MRF237 5GHz PNP transistor

    power transistors cross reference

    Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
    Text: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products


    Original     		PDF MJW16212 225AA) MJE13003 BUH51 power transistors cross reference motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE

    S78DM12Q

    Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
    Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power


    Original     		PDF SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    Flyback Transformers SANYO TV

    Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
    Text: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)


    Original     		PDF CDMA2000] Flyback Transformers SANYO TV RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams

    2n6052

    Abstract: 2N6058 MOTOROLA 2n6058
    Text: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general-purpose amplifier and low frequency switching applications. • • • High DC Current Gain —


    OCR Scan     		PDF 2N6052/D 2N6058 2N6052, 2N6059 2N6052* 2N6059* O-204AA 2n6052 2N6058 MOTOROLA

    2n6057

    Abstract: 2N6050 2N6059 2N6058 2N6051 2N6057 MOTOROLA
    Text: MOTOROLA Order this document by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2 N 60 50 D arlington C om plem entary Silicon Pow er Transistors thru . . . designed for general-purpose amplifier and low frequency switching applications. • • • High DC Current Gain —


    OCR Scan     		PDF 2N6050/D 2N6050, 2N6057 2N6058 2N6052, 2N6059 2N6059F O-204AA 2N6050 2N6051 2N6057 MOTOROLA

    2N6055 MOTOROLA

    Abstract: 2N6055 2N6055 transistor 2N6056
    Text: MOTOROLA Order this document by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N 60 55 2 N6056* D arlington C om plem entary Silicon Pow er Transistors ‘ Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications.


    OCR Scan     		PDF 2N6055/D 2N6055 2N6056 N6056* O-204AA 2N6055 MOTOROLA 2N6055 2N6055 transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N6056/D SEMICONDUCTOR TECHNICAL DATA 2 N 60 56 NPN D arlington Silicon Pow er Transistor Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications. • • • • DARLINGTON


    OCR Scan     		PDF 2N6056/D O-204AA

    2N3866 MOTOROLA s parameters

    Abstract: 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 2N3866 MOTOROLA s parameters 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD

    2N6059 MOTOROLA

    Abstract: 2N6058 MOTOROLA
    Text: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN 2N6058 . . designed for general-purpose amplifier and low frequency switching applications. • High DC Current Gain —


    OCR Scan     		PDF 2N6052/D 2N6058 2N6052, 2N6059 2N6052* 2N6059* Box5405, 2N6059 MOTOROLA 2N6058 MOTOROLA

    2N6282

    Abstract: 2N6282 MOTOROLA 2N6284 motorola
    Text: MOTOROLA Order this document by 2N6282/D SEMICONDUCTOR TECHNICAL DATA NPN 2 N 62 82 Darlington Com plem entary Silicon Power Transistors thru . . . designed for general-purpose amplifier and low -frequency switching applica­ tions. • • • 2 N6 2 8 4 *


    OCR Scan     		PDF 2N6282/D 2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 2N6285 2N6282 2N6282 MOTOROLA 2N6284 motorola

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720