transistor marking T83 ghz
Abstract: 2SC4957-T1 2SC4957
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4957 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Reverse Transfer Capacitance Cre = 0.3 pF TYP. • 4-pin minimold Package
|
Original
|
PDF
|
2SC4957
2SC4957-T1
transistor marking T83 ghz
2SC4957-T1
2SC4957
|
BFQ131
Abstract: Bfq13 SC05
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ131 NPN video transistor Product specification File under Discrete Semiconductors, SC05 1995 Sep 26 Philips Semiconductors Product specification NPN video transistor BFQ131 FEATURES DESCRIPTION • Low output capacitance
|
Original
|
PDF
|
BFQ131
MSB033
BFQ131
Bfq13
SC05
|
TRANSISTOR SMD MARKING CODE MV DIODE
Abstract: TRANSISTOR SMD CODE PACKAGE SOT223 PZTM1101 Transistor Catalog
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D087 PZTM1101 NPN transistor/Schottky-diode module Product specification 1996 May 09 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PZTM1101 FEATURES DESCRIPTION • Low output capacitance
|
Original
|
PDF
|
M3D087
PZTM1101
PZTM1101
OT223
PZTM1102.
TM1101.
MAM236
TRANSISTOR SMD MARKING CODE MV DIODE
TRANSISTOR SMD CODE PACKAGE SOT223
Transistor Catalog
|
tm1101
Abstract: schottkydiode schottky-diode schottky transistor npn
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D087 PZTM1101 NPN transistor/Schottky-diode module Product specification 1996 May 09 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PZTM1101 FEATURES DESCRIPTION • Low output capacitance
|
Original
|
PDF
|
M3D087
PZTM1101
OT223
PZTM1102.
MAM236
tm1101
schottkydiode
schottky-diode
schottky transistor npn
|
Untitled
Abstract: No abstract text available
Text: DMB53D0UDW N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance
|
Original
|
PDF
|
DMB53D0UDW
AEC-Q101
OT-363
DS31675
|
DMB53D0UV
Abstract: No abstract text available
Text: DMB53D0UV N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance
|
Original
|
PDF
|
DMB53D0UV
AEC-Q101
OT-563
J-STD-020
DS31651
DMB53D0UV
|
Untitled
Abstract: No abstract text available
Text: DMB53D0UV N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance
|
Original
|
PDF
|
DMB53D0UV
AEC-Q101
OT563
J-STD-020
DS31651
|
DMB53D0UDW
Abstract: No abstract text available
Text: DMB53D0UDW N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance
|
Original
|
PDF
|
DMB53D0UDW
AEC-Q101
OT-363
J-STD-020
DS31675
DMB53D0UDW
|
NEC 2581
Abstract: nec 2405 2581 NEC zo 103 ma 75 607 30460 pulse 01940 9590 IC 2030 PIN CONNECTIONS 5598 transistor 2SC4954-T1
Text: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05
|
Original
|
PDF
|
2SC4954
2SC4954-T2
2SC4954-T1
NEC 2581
nec 2405
2581 NEC
zo 103 ma 75 607
30460
pulse 01940
9590
IC 2030 PIN CONNECTIONS
5598 transistor
2SC4954-T1
|
NEC 2581
Abstract: nec 258 2581 NEC 574 nec 2SC4954 2SC4954-T1 2SC4954-T2 26480 30460 NEC 821
Text: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05
|
Original
|
PDF
|
2SC4954
2SC4954-T1
NEC 2581
nec 258
2581 NEC
574 nec
2SC4954
2SC4954-T1
2SC4954-T2
26480
30460
NEC 821
|
Untitled
Abstract: No abstract text available
Text: LS3250SA NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SA is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing. See Packaging Information . LS3250SA Features: Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
|
Original
|
PDF
|
LS3250SA
T0-92
|
bfq162
Abstract: BFQ16
Text: Philips Semiconductors Product specification NPN video transistor BFQ162 FEATURES DESCRIPTION • Low output capacitance • Good thermal stability NPN video transistor in a SOT32 TO-126 package. • Gold metallization ensures excellent reliability. PINNING
|
OCR Scan
|
PDF
|
O-126)
BFQ162
bfq162
BFQ16
|
tm1101
Abstract: Diode schottky eb PZTM1101 PZTM1102
Text: Product specification Philips Semiconductors PZTM1101 NPN transistor/Schottky-diode module FEATURES DESCRIPTION • Low output capacitance Combination of an NPN transistor and a Schottky barrier diode in a plastic SOT223 package. PNP complement: PZTM1102.
|
OCR Scan
|
PDF
|
PZTM1101
OT223
PZTM1102.
TM1101.
OT223)
OT223.
7110flEb
tm1101
Diode schottky eb
PZTM1101
PZTM1102
|
NPN BH RE
Abstract: BFQ13 BFQ131
Text: Philips Semiconductors Product specification NPN video transistor BFQ131 FEATURES DESCRIPTION • Low output capacitance NPN silicon transistor in a 3-lead plastic SOT54 package. • High dissipation • High gain bandwidth product. PINNING APPLICATIONS PIN
|
OCR Scan
|
PDF
|
BFQ131
NPN BH RE
BFQ13
BFQ131
|
|
|
BFQ161
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN video transistor BFQ161 FEATURES DESCRIPTION • Low output capacitance NPN video transistor in a SOT54 TO-92 plastic package. • High gain bandwidth • High current applicability • Good thermal stability
|
OCR Scan
|
PDF
|
BFQ161
MEA205
BFQ161
|
BFQ235
Abstract: BFQ235A
Text: Philips Semiconductors Product specification NPN video transistors BFQ235; BFQ235A FEATURES DESCRIPTION • High breakdown voltages NPN video transistor in a SOT 128B T0-202 plastic package. PNP compléments: BFQ255 and BFQ255A. • Low output capacitance
|
OCR Scan
|
PDF
|
T0-202)
BFQ255
BFQ255A.
BFQ235;
BFQ235A
OT128B;
O-202)
BFQ235
BFQ235A
|
Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors Short-form product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Feedback capacitance typ. 0.5 pF Low cost NPN transistor in a plastic SOT23 package. • Stable oscillator operation • High current gain
|
OCR Scan
|
PDF
|
BF747
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN video transistors BFQ231 ; BFQ231A FEATURES DESCRIPTION • High breakdown voltages NPN video transistor in a SOT54 TO-92 plastic package. PNP complements: BFQ251 and BFQ251A. • Low output capacitance • High gain bandwidth
|
OCR Scan
|
PDF
|
BFQ231
BFQ231A
BFQ251
BFQ251A.
BFQ231
BFQ231A
|
BFQ262
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN video transistors BFQ262; BFQ262A FEATURES DESCRIPTION • High breakdown voltages NPN video transistor in a SOT32 TO-126 plastic package. • Low output capacitance Û • Optimum temperature profile • Good thermal stability
|
OCR Scan
|
PDF
|
BFQ262;
BFQ262A
O-126)
BFQ262
BFQ262A
|
bf0232a
Abstract: BF0232 BF023
Text: Philips Semiconductors Product specification NPN video transistors BFQ232; BFQ232A FEATURES DESCRIPTION • High breakdown voltages NPN video transistor in a SOT32 TO-126 plastic package. PNP complements: BFQ252 and BFQ252A. • Low output capacitance • Good thermal stability
|
OCR Scan
|
PDF
|
O-126)
BFQ252
BFQ252A.
BFQ232;
BFQ232A
BFQ232
BFQ232A
bf0232a
BF0232
BF023
|
BF547
Abstract: HS11 MSB003 PHE0 PHILIPS bf547
Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF Low cost NPN transistor in a plastic SOT23 package. • Stable oscillator operation • High current gain • Good thermal stability.
|
OCR Scan
|
PDF
|
BF547
MSB003
BF547
HS11
MSB003
PHE0
PHILIPS bf547
|
BF871
Abstract: BF869 TO-202 philips
Text: Philips Semiconductors Product specification NPN high-voltage transistors BF869; BF871 FEATURES • Low feedback capacitance. o APPLICATIONS • For use in ciass-B video output stages in colour television receivers. DESCRIPTION NPN transistors in a TO-202 plastic package.
|
OCR Scan
|
PDF
|
BF869;
BF871
O-202
BF870
BF872.
O-202)
BF869
BF871
TO-202 philips
|
ferranti
Abstract: MPSA42 MPSA43 Ferranti Semiconductors
Text: MPSA42 MPSA43 FERRANTI semiconductors NPN Silicon Planar High Voltage Transistors DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltages, low saturation voltages and low capacitance.
|
OCR Scan
|
PDF
|
MPSA42
MPSA43
O-5/39
100/iA,
20MHz
ferranti
MPSA43
Ferranti Semiconductors
|
YL2 sot23
Abstract: bb407 Y1 TRANSISTOR MARKING SOT23 5 8B397 PHILIPS bf547 BF547 MBB412
Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ, 1 pF Low cost NPN transistor in a plastic SOT23 package. • Stable oscillator operation • High current gain • Good thermal stability.
|
OCR Scan
|
PDF
|
BF547
bas500
YL2 sot23
bb407
Y1 TRANSISTOR MARKING SOT23 5
8B397
PHILIPS bf547
BF547
MBB412
|
