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    Untitled

    Abstract: No abstract text available
    Text: DIM400DDS12-A000 Dual Switch IGBT Module Replaces DS5841-1.1 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated Cu Base with Al2O3 Substrates DS5841-2 November 2009 LN26744 KEY PARAMETERS VCES VCE(sat) * (typ)


    Original     		PDF DIM400DDS12-A000 DS5841-1 DS5841-2 LN26744)

    DS5841-2

    Abstract: DIM400DDS12-A000
    Text: 6 3 DS5841-2 November 2009 LN26744 14 ±0.2 ±0.2 Replaces DS5841-1.1 Dual Switch IGBT Module 11.5 DIM400DDS12-A000 FEATURES ±0.2 18 10µs Short Circuit Withstand ±0.2 6 x O7 KEY PARAMETERS 28 ±0.5 Non Punch Silicon ±0.2 57 Through VCES VCE(sat) * (typ)


    Original     		PDF DS5841-2 LN26744) DS5841-1 DIM400DDS12-A000 DIM400DDS12-A000