LKE21050T Search Results

LKE21050T Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
LKE21050T		Philips Semiconductors	Microwave Linear Power Transistor		Original	PDF

LKE21050T Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
h a 431 transistor Abstract: LKE21050T n 431 transistor transistor F 0552 b 342 d transistor Text: LKE21050T NPN SILICON MICROWAVE POWER TRANSISTOR DESCRIPTION: The ASI LKE21050T is Designed for Class A, Common Emitter, linear power amplifier Applications up to 2.1 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting	Original	PDF	LKE21050T LKE21050T h a 431 transistor n 431 transistor transistor F 0552 b 342 d transistor
Untitled Abstract: No abstract text available Text: N ANER PHILIPS/DISCRETE ObE D • ^ 5 3 1 3 1 0014^45 7 ■ LKE21050T MAINTENANCE TYPE for new design use LVE21050R T -3 1 ~ 0 7 MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz.	OCR Scan	PDF	LKE21050T LVE21050R)
RTC190 Abstract: LKE21050T LVE21050R Text: N AMER Df aE PH ILIP S /D IS C R E TE D • b b SBT31 0014145 MAINTENANCE TYPE 7 ■ LKE21050T for new design use LVE21050R MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz. Diffused emitter ballasting resistors, interdigitated structure, multiceli geometry and gold sandwich	OCR Scan	PDF	LVE21050R) 0Q1414S LKE21050T RTC190 LKE21050T LVE21050R
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	PDF	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	PDF	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
FET BFW10 Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI	OCR Scan	PDF	BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11