lh534y
Abstract: 44-PIN D9 TO D14 A1739
Text: LH534Y00 CMOS 4M 256K x 16 Mask-Programmable ROM FEATURES • 262,144 words × 16 bit organization PIN CONNECTIONS 40-PIN DIP TOP VIEW • Access time: 120 ns (MAX.) NC 1 40 VCC CE 2 39 A17 D15 3 38 A16 D14 4 37 A15 D13 5 36 A14 • Static operation D12
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LH534Y00
40-PIN
44QFJ-1
44-pin,
650-mil
40-pin,
600-mil
DIP040-P-0600)
lh534y
44-PIN
D9 TO D14
A1739
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lh5s4
Abstract: lh5348 LH5s lh5s47xx 48-TSOP LH53H4100D LH53H4100N lh534y00d 48TSOP sharp mask rom
Text: NEW PRODUCT INFORMATION SHARP LH53 H4100 • Description High-speed 4M-bit Mask-Programmable ROM ■ Pin Connections The LH53H4100D/N User's No. ! LH5H41XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits. It is fabricated using sillicon-gate CMOS process technology.
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LH53H4100
LH53H4100D/N
LH5H41XX)
LH53H4100D
LH53H4100N
32-pin
DIP032-P-0600)
OP032-P-0525)
A0-A18
lh5s4
lh5348
LH5s
lh5s47xx
48-TSOP
LH53H4100N
lh534y00d
48TSOP
sharp mask rom
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MB8316200
Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S
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23C4000C
23C4100C
23C4200C
23V4000C
KM23V41
KM23V41OOCET
UPD23C4001EB
UPD23C4000S
HN62344B
HN62444
MB8316200
uPD23C4000S
TC533200
UPD23C4000
23C32000a
624116
HN62318/338B
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536G
Abstract: LH534600
Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)
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LH53259D/N/T
LH53517D/N/T/TR
LH531VOOD/N/TAJ
LH53V1ROON/T
LH530800AD/AN/AU
LHS30800AD/AN-Y
LH531OOOBD/BN
LH531000BN-S
LH531024D/N/U
LH532100BD
536G
LH534600
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lh57257
Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429
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IR2E201
IR2E24
IR2E27/A
IR2E28
IR2E29
IR2E30
IR2E31/A
IR2E32N9
IR2E34
IR2E41
lh57257
IR2E31
IR2E01
IR2C07
IR2E27
IR2E19
IR2E31A
IR3n06
IR2E02
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LH231G
Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200
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28DIP
28DIP
LH2389D
LH23128D
LH23286D
LH236120
LH2310006D
LH231G
lh5348
LH538b
LH2326
lh5s4
LHMN5
lh5359
lh5348xx
lh537
LH235
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flash 64m
Abstract: No abstract text available
Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161
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100ns
120ns
150ns
256kj
LH53259
LH53517
LH531V00
LH530800A
LH531024
LH532048
flash 64m
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lh5348
Abstract: lh5s4 48TSO
Text: ü fi LH53V4R00 LH53V4R00-2 • Description ■ Pin Connect for T h e L H 5 3 V 4 R 0 0 N /T , L H 5 3 V 4 R 0 0 N /T -2 U ser's N o . : L H 5V 4R X X is a CM OS 4 M -b it m ask-program m able ROM 32-pin SOP organized as 524 288 X 8 bits. It provides a high-speed access time o f 120/150 ns with low
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LH53V4R00
LH53V4R00-2
32-pin
LHS3V4R00-2
lh5348
lh5s4
48TSO
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lh5348
Abstract: TSOP032-P-0820 lh5s4 flash memory sop 32-pin lh5348xx lh5s47xx
Text: NEW PRODUCT INFORMATION LH53V4R00 LH53V4R00-2 • Low-Voltage • High-Speed 4M-bit Mask-Programmable ROM Description Pin Connection T he L H 5 3 V 4 R 0 0 N /T , L H 5 3 V 4 R 0 0 N /T -2 U s e r's N o. : LH5V4RXX is a CM O S 4M -bit m ask-program m able ROM
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LH53V4R00
LH53V4R00-2
LH53V4R00N/T,
LH53V4R00N/T-2
LH53V4R00
LH53V4R00N1LH53V4R00N-2
32-pin
lh5348
TSOP032-P-0820
lh5s4
flash memory sop 32-pin
lh5348xx
lh5s47xx
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lh5s4
Abstract: lh5348 sharp lh53 lh5s47xx LH5S47 60446 sharp mask rom LH53V4R00N LH5H41XX TSOP032-P-0820
Text: NEW PRODUCT INFORMATION LH53V4R00 LH53V4R00-2 • Description Low-Voltage • High-Speed 4M-bit Mask-Programmable ROM Pin Connection The L H 53V 4R 00N /T , L H 53V 4 R 0 0 N /T -2 U ser’s N o. : LH5V4RXX is a CMOS 4M -bit mask-programmable ROM 32-pin SOP
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LH53V4R00
LH53V4R00-2
LH53V4R00N/T,
LH53V4R00N/T-2
32-pin
LH53V4R00N
lh5s4
lh5348
sharp lh53
lh5s47xx
LH5S47
60446
sharp mask rom
LH5H41XX
TSOP032-P-0820
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LQ070T5BG01
Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66
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109-n
GL1PR112.
GL1PR135.
GL1PR136.
GL1PR211.
GL1PR212.
GL3KG63.
GL3P201.
GL3P202.
GL3P305.
LQ070T5BG01
LM24P20
LM162KS1
BSCR86L00
IR2C07
LM5Q31
IR3Y29B
BSCU86L60
lq6bw
lq6bw506
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IR3Y29B
Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX
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ARM710
ARM810
IR3T24
IR3T24N
IR3Y05Y
IR3Y08
IR3Y12B
IR3Y18A
IR3Y21
IR3Y26A
IR3Y29B
ir3y26a1
IR4N
IR3T24N
IR3C08N
ir2c53
ir2c05
li3301
IR2E02
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48 tsop flash pinout
Abstract: LH23512
Text: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)
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LH2369
LH23126
LH23255
LH53259
LH23512
LH53517
LH53H0900
LH531VOO
LH530800A
LH530800A-Y
48 tsop flash pinout
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lh5s4
Abstract: LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85
Text: MASK ROM ☆ New product ★ • M Capacity ASK F O M S Bit Pinout* configuration Model No. LH53V4T00E J J x8 4M x 16 x 8/ x 16 x8 8M x 8/ x 16 LH53V4ROOAN/AT LH53V4R00N/T J J J LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T J J F F LH534A00T
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LH53V4T00E
LH53V4ROOAN/AT
LH53V4R00N/T
LH53V4YG0N/E
LH53H4100D/N
LH534700D/N
LH534R00BD/BN
LH53V4B00T
LH534A00T
LH534BOOT
lh5s4
LH537
lh5s4p
lh5s4R
lh5s46
LH538
44SOP
lh533200
LH5s
5g85
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lh5s4
Abstract: LH-MN47XX lh5s4axx LH5359 LH5s lh5317 LH532CXX 32DIP
Text: MEMORIES • JEDEC Standard EPROM Pinout • Low voltage operation 3 V, 1.8 V Access time Bit Capacity configuration 1M 2M 4M Model No. LH53V1ROON/T LH53V2R00AN/AT LH53V2T00E LH53V2YOONÆ LH53V4T00E LH53V4R00AN/AT LH53V4Y00NÆ x 8 x 8 x 8 User’s No. Supply
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LH53V1ROON/T
LH53V2R00AN/AT
LH53V2T00E
LH53V2YOONÆ
LH53V4T00E
LH53V4R00AN/AT
LH53V4Y00NÆ
32SOP/32TSOP
32TSOP
lh5s4
LH-MN47XX
lh5s4axx
LH5359
LH5s
lh5317
LH532CXX
32DIP
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AE31
Abstract: No abstract text available
Text: CMOS 4M 256K x 16 Mask-Programmable ROM FEATURES • 262,144 words x 16 bit organization PIN CONNECTIONS 4 0 - P IN D IP T O P V IE W / • Access time: 120 ns (MAX.) NCd •\ 1 « 40 ^ v cc C ic 2 39 □ a D 15C 3 38 □ A 16 D14C 4 37 H ^ 1 5 D 13 E 5
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40-pin,
600-mil
44-pin,
650-mil
534Y00
QFJ044-P-S650)
44-pln,
AE31
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sharp mask rom
Abstract: cd rom 40 pinout lh5348 lh5s4 LH5S
Text: NEW PRODUCT INFORMATION SHARP LH53H4000 • Description The LH53H4000D/N User's No. : LH5H40XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits (Byte mode) or 262 144 X 16 bits (Word mode) that can be selected by BYTE input pin. ■ Features
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LH53H4000
LH53H4000D/N
LH5H40XX)
LH53H4000D
40-pin
DIP040-P-0600)
LH53H4000N
OP040-P-0525)
40DIP/40SOP/48TSOP
sharp mask rom
cd rom 40 pinout
lh5348
lh5s4
LH5S
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lh5348
Abstract: lh5s4 lh5348xx sharp mask rom LH534A00T LH5s LH534B00T 40-DIP
Text: NEW PRODUCT INFORMATION SHARP LH53H4100 • High-speed 4M-bit Mask-Programmable ROM ■ Description Pin Connections The LH53H4100D/N User's No. ! LH5H41XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits. It is fabricated using sillicon-gate CMOS process technology.
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OCR Scan
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PDF
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LH53H4100
LH53H4100D/N
LH5H41XX)
LH53H4100D
32-pin
DIP032-P-0600)
LH53H4100N
OP032-P-0525)
4P00N/T
lh5348
lh5s4
lh5348xx
sharp mask rom
LH534A00T
LH5s
LH534B00T
40-DIP
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sharp lh53
Abstract: No abstract text available
Text: CMOS 4M 256K x 16 MROM FEATURES • 262,144 words x 16 bit organization PIN CONNECTIONS 4 0 -P IN D IP T O P V IE W f 1• 40 • Power consumption: Operating: 357.5 mW (MAX.) CËC 2 39 Zl a 17 D 1 5 C 3 38 H A 16 D u ll 4 37 H A 15 Standby: 550 (iW (MAX.)
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OCR Scan
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PDF
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40-pin,
600-mil
44-pin,
650-mil
LH534Y00
FJ044-P
sharp lh53
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lh5348
Abstract: lh5348xx sharp mask rom lh5s4
Text: NEW PRODUCT INFORMATION SHARP LH53 H 4100 • High-speed 4M-bit Mask-Programmable ROM ■ Description Pin Connections The LH53H4100D/N User’s No. : LH5H41XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits. It is fabricated using sillicon-gate CMOS process technology.
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OCR Scan
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PDF
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LH53H4100D/N
LH5H41XX)
LH53H4100D
32-pin
DIP032-P-0600)
LH53H4100N
OP032-P-0525)
A40TSOP
40DIP/44QFJ
lh5348
lh5348xx
sharp mask rom
lh5s4
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lh5s4
Abstract: lh5348 40-DIP LH53H4000D LH53H4000N 48TSOP 40-pin EPROM pinout sharp mask rom LH534B00T
Text: NEW PRODUCT INFORMATION S H A R P LH53H4000 • Description ■ The LH53H4000D/N User's No. : LH5H40XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits (Byte mode) or 262 144 X 16 bits (Word mode) that can be selected by BYTE input pin.
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OCR Scan
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PDF
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LH53H4000
LH53H4000D/N
LH5H40XX)
LH53H4000D
40-pin
DIP040-P-0600)
LH53H4000N
SQP040-P-0525)
512kX
lh5s4
lh5348
40-DIP
48TSOP
40-pin EPROM pinout
sharp mask rom
LH534B00T
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LH534Y00
Abstract: No abstract text available
Text: CMOS 4M 256K x 16 MROM FEATURES • 262,144 words x 16 bit organization PIN CONNECTIONS 40-PIN DIP TOP VIEW / • Access time: 120 ns (MAX.) • Power consumption: Operating: 357.5 mW (MAX.) NCZ 1• 40 CËC 2 39 El v cc Zl a 17 Z 3 38 El a 16 D 14Z 4 37 □ ^15
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40-pin,
600-mil
44-pin,
650-mil
LH534Y00
40-PIN
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