lh57257
Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429
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IR2E201
IR2E24
IR2E27/A
IR2E28
IR2E29
IR2E30
IR2E31/A
IR2E32N9
IR2E34
IR2E41
lh57257
IR2E31
IR2E01
IR2C07
IR2E27
IR2E19
IR2E31A
IR3n06
IR2E02
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BNK-17
Abstract: No abstract text available
Text: MEMORIES ★Under development • S ta tic RA M s Process Capacity Configuration words X bits Modal No. 2k X 8 Full CMOS 64k 8k X 8 256k 32k X 8 64k 8k X 8 64k X 4 256k 32k X 8 64k X 8 CMOS periphery 100 40/0.001 5 ± 10% O to 70 100 40/0.001 5 ± 10% - 4 0 to 85
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LH5116/NA/D-10
LH5116H/HN/HD-10
LH5116SN
24SOP
28SOJ
400mil)
LH521002BK/BNK-17/L
LH521002BK/BNK-20/L
LH521002BK/BNK-2S/L
LH521007AK-20
BNK-17
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LH5160N
Abstract: LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55
Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Features Functional Description The IH 5911, LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.
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LH5912
LH5914are
LH5911
LH5914
/IDT7134
16Kx18
64Kx18
LH5160N
LH5115
LH5118D
LH5160
LH5160D
LH521000
LH5167
LH52252A
LH5114H
LH5911-55
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Untitled
Abstract: No abstract text available
Text: LH5118 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 (MAX.) • Single +5 V power supply • Fully static operation • TTL compatible I/O • Three-state outputs • •
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LH5118
LH5118H:
24-pin,
600-mil
300-mil
450-mil
LH5118
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LH5118D
Abstract: LH5118N-10 lh5118
Text: LH5118/ CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5118 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:
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LH5118/
LH5118H:
24-pin,
600-mil
300-mil
450-mil
LH5118
LH5118D
LH5118N-10
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LH5911
Abstract: lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl
Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Functional Description Features The LH5911. LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.
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LH5911
/LH5912/LH5914
LH5911.
LH5912
LH5914are
LH5914
16Kx18
LH52270
lh5167-55
LH5101
LH52250
LH5160D
LH5167
LH52252
LH5114H
lh5160n
4kx8 static ram ttl
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Untitled
Abstract: No abstract text available
Text: FEATURES • 2,048 • Access time: 100 ns MAX. • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 (iW (MAX.) x 8 bit organization • Single +5 V power supply • Fully-static operation • TTL compatible I/O • Three-state outputs • • Wide temperature range available
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LH5118
LH5118
LH5118H
24-pin,
600-mil
300-mil
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LH5118h
Abstract: lh5118 2K x 8 static ram LH5118N-10 16k x 8 ram DIP24-P-600
Text: LH5118 CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,0 4 8 x 8 bit organization The LH5118 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (M AX.) • Power consumption:
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LH5118
LH5118H:
24-pin,
600-mil
300-mil
450-mil
LH5118h
2K x 8 static ram
LH5118N-10
16k x 8 ram
DIP24-P-600
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LHS168
Abstract: LH52252A LH52252
Text: V .J 1 íVt! Static RAMs ★Under development Process Capacity Model No. Configuration Access time ns 70 -I 16k 2k Package 90 100 120 LH5116 J— I. 24 24 24 LH5116H 3 -T 24 24 24 - Z ÏÏ-J 1 24 24 24 C E , C S c o n tro l Data retention current : 0.2 pAjMAXj j
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LH5116
LH5116H
LH5116S
LH5117
LH511
LH5118
LH5118H
LH52252A
LH52253
LH521002A
LHS168
LH52252
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AG2221
Abstract: LH5118N-10
Text: LH5118 CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization • Access time: 100 ns (MAX.) The LH5118 is a static RAM organized as 2,048 x 8 bite. It is fabricated using silicon-gate CMOS process technology. • Power consumption:
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LH5118
LH5118
LH5118H:
24-pin,
600-mil
300-mil
AG2221
LH5118N-10
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