Current transducer HA 400 SU
Abstract: lem HA 200-SU 300-SU 500-SU lem ha 400 Current transducer HA 200 SU HA200
Text: IPN = 200 . 500 A Current Transducer HA 200 to 500-SU For the electronic measurement of unipolar DC, AC and pulsed currents, with a galvanic isolation between the primary high power circuit and the secondary (electronic) circuit. Electrical data Type HA 200-SU
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500-SU
200-SU
300-SU
400-SU
Current transducer HA 400 SU
lem HA
200-SU
300-SU
500-SU
lem ha 400
Current transducer HA 200 SU
HA200
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LEM HA 200-SRU
Abstract: lem HA 200-SRU 400-SRU 500-SRU HA200 300-SRU
Text: Current Transducer HA 200 to 500-SRU IPN = 200 . 500 A For the electronic measurement of DC, AC and pulsed currents, with a galvanic isolation between the primary high power circuit and the secondary (electronic) circuit. Electrical data Type Primary nominal
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500-SRU
200-SRU
300-SRU
400-SRU
500-SRU
LEM HA 200-SRU
lem HA
200-SRU
400-SRU
HA200
300-SRU
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400-SB
Abstract: lem HA lem HA 200-sb lem HA 200 sb 300-SB LEM Components HA200
Text: IPN = 200 . 500 A Current Transducer HA 200 to 500-SB For the electronic measurement of DC, AC and pulsed currents, with a galvanic isolation between the primary high power circuit and the secondary (electronic) circuit. Electrical data Type HA 200-SB HA 300-SB
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500-SB
200-SB
300-SB
400-SB
400-SB
lem HA
lem HA 200-sb
lem HA 200 sb
300-SB
LEM Components
HA200
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LEM HA 200-SRI
Abstract: lem HA 200-SRI LEM Components 300-SRI lem ha 400 HA200
Text: Current Transducer HA 200 to 500-SRI IPN = 200 . 500 A For the electronic measurement of DC, AC and pulsed currents, with a galvanic isolation between the primary high power circuit and the secondary (electronic) circuit. Electrical data Type HA 200-SRI
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500-SRI
200-SRI
300-SRI
400-SRI
LEM HA 200-SRI
lem HA
200-SRI
LEM Components
300-SRI
lem ha 400
HA200
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100AH
Abstract: No abstract text available
Text: 巻線チップインダクタ WOUND CHIP INDUCTORS LB SERIES OPERATING TEMP. K25VJ105C(製品自己発熱含む) fIncluding self-generated heatg 特長 FEATURES 豊富なラインアップ形状と標準低Rdc、大電流シリーズでお客様の広範囲
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K25VJ105C
YLB3218fg3225
YLBMF1608fg
YLB3218
YLBMF1608
100AH
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has 50-s lem
Abstract: has lem HAS 50-S TECHNICAL FILE 5045-04A 94v-0 motor
Text: Current Transducers HAS 50 to 600-S For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). IPN = VOUT = 50 . 600 A ±4V Electrical data
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600-S
100-S
200-S
300-S
400-S
500-S
045-04A
has 50-s lem
has lem
HAS 50-S
TECHNICAL FILE
5045-04A
94v-0 motor
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Untitled
Abstract: No abstract text available
Text: Current Transducers HAS 50 to 600-S For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). IPN = 50 . 600 A VOUT = ± 4 V Electrical data
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600-S
100-S
200-S
300-S
400-S
500-S
94-V0
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lem HA
Abstract: 300-SRID split core
Text: Current Transducer HT 200 to 500-SRID IPN = 200 . 500 A For the electronic measurement of DC, AC and pulsed currents, with a galvanic isolation between the primary high power circuit and the secondary (electronic) circuit. Electrical data Type HT 200-SRID
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500-SRID
200-SRID
300-SRID
400-SRID
lem HA
300-SRID
split core
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500-SR
Abstract: 500-SRID 400-SRID lem HA 300-SRI 300-SRID
Text: Current Transducer HT 200 to 500-SRID IPN = 200 . 500 A For the electronic measurement of DC, AC and pulsed currents, with a galvanic isolation between the primary high power circuit and the secondary (electronic) circuit. Electrical data Type Primary nominal
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500-SRID
200-SRID
300-SRID
400-SRID
500-SR
500-SRID
400-SRID
lem HA
300-SRI
300-SRID
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LEM 3225
Abstract: LEM Taiyo Yuden JISC0051
Text: 信号系巻線チップインダクタ WOUND CHIP INDUCTORS FOR SIGNAL LINE LB SERIES M TYPE OPERATING TEMP. K25VJ105C(製品自己発熱含む) fIncluding self-generated heatg 特長 FEATURES YLBM2016(新製品) 下面電極構造を採用により高Q化および狭公差化を実現しました。信号
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K25VJ105C
YLBM2016
LEM 3225
LEM Taiyo Yuden
JISC0051
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pwm fa 552
Abstract: Cmosic pwm 8pin
Text: S P E C IF IC A T IO N Fuji £l*cts1c Co .ltd. Tn*y *ha!l bt n*lth«r rtproduced, copied, lem. or disc los ta in ai y way w h í l t o í v t r f o r < r > * in t o f i n y Type Namp Spec. No. FA I : 3 8 4 2 P M S 6 NO 3 3 1 a F u ji E l e c t r i c Co . Ltd.
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MS6N0331a
H04-004-07
DDDL325
MS6N0331a
H04-004-03
DGDb333
MS6N033
0G0b334
pwm fa 552
Cmosic
pwm 8pin
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HA400S
Abstract: lem ha400-s lem HA lem module HA500S HA400-S LEM transducer Current transducer HA 400 SU
Text: LEM CURRENT TRANSDUCERS M odu les H A 400-S B , H A 400-S U , H A 400-S I H A 500-S B , H A 500-S U , H A 500-S I In sta n ta n e o u s O u tp u ts Definition - Principle The LEM type HA400S and HA500S are transducers employing the Hall Effect to measure D.C. and complex
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400-S
500-S
HA400S
HA500S
HA400-S
HA500-S
lem ha400-s
lem HA
lem module
HA400-S
LEM transducer
Current transducer HA 400 SU
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lem HA
Abstract: ha500sr lem ha 400 lem module ha HA500-SR lem module LEM transducer lem current 400sr HA400S
Text: LEM CURRENT TRANSDUCERS M o d u les H A 400-SR U , H A 400-SR I H A 500-SR U , H A 500-SR I T ru e RM S O u tp u ts Definition - Principle The LEM type HA400SR and HA500SR are transducers employing the Hall Effect to measure D.C. and complex waveform A.C. currents in a non invasive manner. Galvanic isolation is provided between the primary (measured) and
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400-SR
500-SR
HA400SR
HA500SR
HA400-SR
HA500-SR
HA500SR
lem HA
lem ha 400
lem module ha
HA500-SR
lem module
LEM transducer
lem current
400sr
HA400S
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HA300SR
Abstract: HA200SR lem current lem HA 200-SRU lem module hall effect lem ha 400 300-SR lem module 200-SR
Text: LEM CURRENT TRANSDUCERS M o d u les H A 200-SR U , H A 200-SR I H A 300-SR U , H A 300-SR I T ru e RM S O u tp u ts Definition - Principie The LEM type HA200SR and HA300SR are transducers employing the Hall Effect to measure D.C. and complex waveform A.C. currents in a non invasive manner. Galvanic isolation is provided between the primary (measured) and
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200-SR
300-SR
HA200SR
HA300SR
HA200-SR
HA300-SR
HA300SR
lem current
lem HA
200-SRU
lem module hall effect
lem ha 400
lem module
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Untitled
Abstract: No abstract text available
Text: AW02G THRU AW08G SERIES MINIATURE GLASS PASSIVATED CONTROLLED AVALANCHE SINGLE - PHASE SILICON BRIDGE RECTIFIER VOLTAGE - 200 to 800 Volts C U R R E N T -1.5 Amperes FEATURES ♦ Glass passivated chip junctions ♦ Plastic material used carries Underwriters
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AW02G
AW08G
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT689B I S S U E 3 - O C T O B E R 1995 _ FEATU RES * G ain o f 400 at lc=2 A m p s a n d lo w saturation v o lta ge * Extrem ely lo w e q u iva le nt o n -re sistan ce; R CElMti 9 2 m Q at 3 A
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OT223
FZT689B
FZT789B
FZT689B
300ji
lc/lBa10
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER IO R 73 D | MflSSMSa □0071ÖM i f T'-¿>/' 2'3 Data Sheet No. PD-2.134 In t e r n a t i o n a l , r e c t i f i e r R23D & R23DR SERIES 600 - 400 VOLTS RANGE 350 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS
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R23DR
D0-205AB
R23DGR4A.
4fl55452
00071flfl
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lem lt 100 p
Abstract: N24-N2 Lem LT 80 p lem current lt 100 LG jtag
Text: P R E L IM IN A R Y D A T A S H E E T M it s u b is h i < d ig it a l a s s p > M66244FP June 1998 Ver.8.0.0 High Speed Monolithic Pulse Width Modulator NO TE:This is not final specification. Some parametric limits are subject to change DESCRIPTION The M66244FP is a high-speed digitally programmable pulse width modulator PWM which
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M66244FP
M66244FP
72MHz.
45MHz
72MHz
lem lt 100 p
N24-N2
Lem LT 80 p
lem current lt 100
LG jtag
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AKBPC2502
Abstract: lem la 55 p
Text: AKBPC2502 thru 2508 L I T E M E I SEMICONDUCTORS rtnnnqUMi VOLTAGE RANGE 200 to 800 Volts CURRENT 25 Amperes aw uauche KBPC KBPC-W FEATURES ' 1.2 MIN. 130.5 .432 [I0-97Ii.q'm a x • C ontrolled Avalanche Series w ith 2 5 0 V , _ 4 5 0 V , 6 5 0 V , and 8 5 0 V minimum
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AKBPC2502
I097Ii
AKBPC2508
lem la 55 p
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LT8900
Abstract: itt 2222a LT89000 2203a ses cree 3535 PS-303 AD clt850 LT8600 2168A LT8500
Text: Æ | M IT - L I f 1 w II CLA80000 SERIES I Km*Ink HIGH DENSITY CMOS GATE ARRAYS SEMICONDUCTOR DS3820-2.1 July 1997 INTRODUCTION ARRAY SIZES T he C L A 8 0 k gate array se rie s from M itel S e m ico n d u cto r offers advan ta ge s in spe ed and d e n sity over previous array
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CLA80000
DS3820-2
rra635
MLA85
MLA87
MLT88
MLT89
GA84-ACA-2828
PGA100-ACA-3434
PGA120-ACA-3434
LT8900
itt 2222a
LT89000
2203a ses
cree 3535
PS-303 AD
clt850
LT8600
2168A
LT8500
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"Q-bit Corporation"
Abstract: No abstract text available
Text: 5 - 500 MHz Standard Hybrid Amplifier Param eters 5-500 MHz Temperature bandwidth Frequency range Gain vs. temperature Low V SW R °c MHz dB dB Max Gain flatness 1.0 dB M ax p-p Reverse isolation 25 dB Min VSW R 1.5:1 1.5:1 +15 dBm Min 3rd O rd e r +30 dBm Min
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QBH-233
-55to
fig26
H91-0233
"Q-bit Corporation"
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lem 732 733
Abstract: lem 731 IRF3303 lem 733 1rf730 IRF330-333 5N40 MTP5N35 733 331 lem* 731
Text: FAIRCHILD SEMICONDUCTOR A4 DE I 34b‘ïb74 0 0 5 7 0 ^ □ IRF330-333/IRF730-733 M TM /M TP5N35/5N40 N-Channel Power M O SF ET s, 5.5 A, 350 V/400 V FAIRCHILD A Schlumberger Company Power And Discrete Division — Description TO-204AA TO-220AB IRF330 IRF331
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IRF330-333/IRF730-733
MTM/MTP5N35/5N40
T-39-11
O-22QAB
IRF730
IRF731
IRF732
IRF733
MTP5N35
MTP5N40
lem 732 733
lem 731
IRF3303
lem 733
1rf730
IRF330-333
5N40
MTP5N35
733 331
lem* 731
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KA3846
Abstract: lem module ha
Text: KA3846 SMPS CONTROLLER CURRENT MODE PWM CONTROLLER The kA3846 control 1C provides all of the necessary features to imple ment fixed frequency, current mode control schemes while maintaining a minimum external parts count. The superior performance of this technique can be measured in Impr
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KA3846
KA3846
145CT
ml45Cr
lem module ha
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BPX90S
Abstract: No abstract text available
Text: SIEMENS BPX90 BPX 90F DAYLIGHT FILTER SILICON PLANAR PHOTODIODE Package Dimensions in Inches mm .2 1 2 ( 5 .4 ) - Chip position ¡4 - / . m FEATURES Photosensitive /~ a re a 069 x 124 (1.75 x3 .1 5 ) . 051 (1.3) ! ! ! I • Silicon Planar Photodiode * Package
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BPX90
BPX90F:
90/BPX
BPX90S
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