Untitled
Abstract: No abstract text available
Text: SKiiP 28AC065V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter K<DS .< .<1[ K/DS -* Q HG R<O 45%7* 2&97'8:*7 *B7?: :76 -* Q HG VWTX R< &B ¥ M L* -^ Diode - Inverter MiniSKiiP 2 .P .P1[ -* Q HG VWTX R< &B ¥ M L* -^ 3-phase bridge inverter
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28AC065V1
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T1321
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information T 1321 N C A +0,1 ø3,5 x 4,5 deep on both sides HK A 6,3 x 0,8 max. 5 G A 4,8 x 0,8 75 -0,3 120 VWK Aug. 1996 T 1321 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties
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T1601
Abstract: RT 1601 tc 1601 a
Text: European PowerSemiconductor and Electronics Company Marketing Information T 1601 N C A +0,1 ø3,5 x 4,5 deep on both sides HK A 6,3 x 0,8 max. 5 G A 4,8 x 0,8 75 -0,3 120 VWK Aug. 1996 T 1601 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties
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T1401
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information T 1401 N C A +0,1 ø3,5 x 4,5 deep on both sides HK A 6,3 x 0,8 max. 5 G A 4,8 x 0,8 75 -0,3 120 VWK Aug. 1996 T 1401 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties
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cri10
T1401
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T1321N
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information T 1321 N C A +0,1 ø3,5 x 4,5 deep on both sides HK A 6,3 x 0,8 max. 5 G A 4,8 x 0,8 75 -0,3 120 VWK Aug. 1996 T 1321 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties
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Untitled
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Text: SUBMINIATURE COAXIAL CONNECTORS SMB LOCK series ISO 9001 APPROVED 60% /2&. ,1752'8&7,21 5$',$// SURSRVHV QHZ 60% /2&. SOXJV ZLWK D VWHS FRQQHFWLRQ V\VWHP 6QDS WKH SOXJ RQ WKH PDOH FRQQHFWRU ILJ /RFN WKH FRXSOH E\ SXVKLQJ GRZQ WKH FRXSOLQJ QXW ILJ
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Untitled
Abstract: No abstract text available
Text: 60% /2&. ,1752'8&7,21 5$',$// SURSRVHV QHZ 60% /2&. SOXJV ZLWK D VWHS FRQQHFWLRQ V\VWHP 6QDS WKH SOXJ RQ WKH PDOH FRQQHFWRU ILJ /RFN WKH FRXSOH E\ SXVKLQJ GRZQ WKH FRXSOLQJ QXW ILJ 7KLV QHZ UDQJH LV WRWDOO\ LQWHUPDWHDEOH ZLWK WKH VWDQGDUG 60% PDOH FRQQHFWRUV
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PM211
Abstract: No abstract text available
Text: 1-96 C8 IFP3306 P-CHANNEL SILICON ENHANCEMENT M O D E VERTICAL D M O S FET Absolute maximum ratings at TA = 25-C Vwtieal M o d * DM OS JD iLtí TO-39 SOT-23 Units 1 lD - 0 .1 6 o ^ ss Gate S o u r c e T h re sh o ld V oltage VGS lh D ra in S a tu ra tio n C u rre n t (Pu lse d)
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IFP3306
OT-23
PM211
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Untitled
Abstract: No abstract text available
Text: SSP5N90A Advanced Power MOSFET FEATURES bvdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 5 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (M a x.) @ VOS= 900V
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SSP5N90A
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Ah 661
Abstract: AH 512
Text: Solderless terminals O LIPPED BLADE Non-insulated E □DEZ3I Brazed seam File No.: E42024 Tool No. Dimensions mm in. Applicable Wire Part No. 5 S ld llt id ltl AWG#(mm2) 22 to 16 *(0 .25 to 1.65) B L G E Gi 0 D 4.6 (.181) 21.6 (.850) 16.8 (.661) 4.8 (.189)
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E42024
Ah 661
AH 512
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sft 43
Abstract: SLR-39MVW SPB-221MVW SPB-221PVW 65SD
Text: fi ! fe i TJ #S It « •h és « 2 m id eg i 2Ê SLM 24SLMW ?LÉ LD-6Û5MVW SL R -39M V W IL S SLR 57M VW •flS SPB-221MVW SPB-221PVW CL -55SD 'G CL 65SD 'G C L -5 5 U R /G C L -6 5 U R /G X+ X > * * • ±?-S>mfÍ. i 7'« = 25‘Cj 7 \, = 2 5 C « ♦ ¡í
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25-Cj
245LMW
12X15.
SLR-39MVW
57MVW
SPB-221MVW
SPB-221PVW
CL-55SD/G
fe-18
fe-83
sft 43
SLR-39MVW
SPB-221MVW
SPB-221PVW
65SD
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LT 220 diode
Abstract: ls- 11m D-68623
Text: □IXYS Advanced Technical Information VMM 600-0075 S MOSFET Module with ultrafast Schottky Diode V DSs =75V lD25 =590 A ^ D S o n = ^ Symbol Test Conditions vw DSS Tj = 25°C to 150°C 75 V V DGR Tj = 25°C to 150°C; RGS = 10 kQ. 75 V < O (/> N-Channel Enhancement Mode
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D-68623
LT 220 diode
ls- 11m
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IXFN27N80
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs IXFK IXFK IXFN IXFN N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowt^ 27N80 25N80 27N80 25N80 D v DSS ^D25 800 V 800V 800 V 800 V 27 A 25 A 27 A 25 A DS on 0.30 n 0.35 O 0.30 Q 0.35 O TO-264AA(IXFK) Symbol vw DSS Test Conditions
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27N80
25N80
25N80
O-264AA
IXFN27N80
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Untitled
Abstract: No abstract text available
Text: □ 1XYS IXFH 22N55 ’reliminary Data HiPerFET“Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low t„ Symbol Test Conditions V*D SS ^ = 25°C to 150°C 550 V VDGR ^ = 25°C to 150°C; RGS = 1 M£2 550 V V GS Continuous ±20 V vw GSM
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22N55
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4030M
Abstract: static 5101 CD4030C CD4030CN
Text: CD4030M/CI VW National ÉlA Semiconductor CD4030M/CD4030C Quad EXCLUSIVE-OR Gate General Description The EXCLUSIVE-OR gates are m onolithic complemen tary MOS CMOS Integrated circuits constructed with N-and P-channel enhancement mode transistors. Alt Inputs are protected against static discharge with diodes
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CD4030M/CI
CD4030M/CD4030C
100nWftyp.
4030M
static 5101
CD4030C
CD4030CN
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Philips mkc capacitors
Abstract: 1581T Polycarbonate capacitor philips Philips MKc SK 100 KQ 12 TDA1581T
Text: Prelim inar^pecificatjon Philips Semiconductors Decoder for traffic warning VWF radio transmissions TDA1581T '_ FEATURES « S e le ctive s u b c a rrie r a m p lifie r (57 kH z) w ith g a in co n tro l • T ra n s m itte r id e n tific a tio n sig n a l (S K ) d e c o d e r
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TDA1581T
TDA1581T
7110flEfc,
Philips mkc capacitors
1581T
Polycarbonate capacitor philips
Philips MKc
SK 100 KQ 12
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T0247A
Abstract: No abstract text available
Text: DIXYS AdvancedTechnical Information IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q HiPerFET Power MOSFETs Q-Class Vw DSS ^D25 R DS on *rr = 300 V " 52 A — 60 m f t — ^ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances
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52N30Q
52N30Q
O-247
O-26B
T0247A
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TDA3500
Abstract: tda2593 application
Text: TDA3500 VWA N a tio n a l S im S e m ic o n d u c to r TV Circuits TDA3500 Chroma Processor + RGB Drive Combination General Description • G-Y and RGB m atrix The TDA3500 is a video processor designed for full feature color television applications. Luminance and color d iffe r
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TDA3500
TDA3500
V-12V
tda2593 application
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ds8863n
Abstract: DS8861 DS8861N 0588 20S2 DS8863 DS8963 DS8963N N18A
Text: DS8861, DS8863, DS8963 Display Controllers/Drivers VWA National itiA Semiconductor DS8861 MOS-to-LED 5-Segment Driver DS8863 MOS-to-LED 8-Digit Driver DS8963 MOS-to-LED 8-Digit Driver General Description Features The DS8861, DS8863 and DS8963 are designed
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DS8861
DS8863
DS8963
DS8861,
ds8863n
DS8861N
0588
20S2
DS8963N
N18A
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IR1261
Abstract: g16b
Text: ¡5 I-LARRIS HD-6408 CMOS Asynchronous Serial Manchester Adapter ASMA) Features Pinout T O P V IE W • Low Bit Error Rate vw c I 24 :3 vcc • O ne M e g a b it/se c D ata Rate ESC C 2 23 □ TDC 3 22 □ SCI SD O IZ 4 21 □ SD DC cz 5 20 □ SS BZI C
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HD-6408
//////////777N
IR1261
g16b
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dy 255
Abstract: 74s405 H R C M F 2J 225 Fairchild 9960 nixie driver 9614 line driver ci 8602 gn block diagram FJH211 Fairchild msi cul9960 variable frequency circuit diagram using IC 555
Text: IN THE, BOSTON - 6 17- 4 4 * A SUBSIDiA) ./ OF DUCOMMUN INCORPOfiATED S, MASS vw . JU N E 1 97 S Fairchild Semiconductor TTL Data Book Contents And Section Selector If you know the correct 5400, 7400, 9300 or 9600 device type number, find the correct page in the
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Untitled
Abstract: No abstract text available
Text: 10 >ifB NOTES \CIRCUIT f ± ± « 4 = MATERIAL NO. I MARK 2.45 B±0J - j (-_ A G O TO HOUSING :46NYL0N 7 ± ± Y II- 7 ACTUATOR :PPS UL94V-0 U VWi ( t -= 0 . 2 ) 7-37)1- TERMINAL SI UL94V-0 PHOS-BRO 0. 17^ TnW- Hl4U± CONTACT GOLD 0.1 MICROMETER MINIMUM
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46NYL0N
UL94V-0
SD-52559-049
EN-02JA
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Untitled
Abstract: No abstract text available
Text: 2SB1403 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 2 O 1 1. Base 2. Collector 3. Emitter O- C M M t- ^VW 3.0 k£2 Typ 180 £2 (Typ) Ö l' 2SB1403 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings
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2SB1403
O-220FM
2SB1106.
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Untitled
Abstract: No abstract text available
Text: 10 >ifB NOTES \C IRC U IT f ± ± « 4 =MATERIAL NO. I MARK 2.45 B±0J -j (-_ AGO TO HOUSING :46NYL0N UL94V-0 7 ± ± Y II- 7 ACTUATOR :PPS UL94V-0 U VWi ( t -= 0 . 7-37)1 - TERMINAL SI 2) PHOS-BRO 0. 17^ TnW - Hl4U± CONTACT GOLD 0.1 MICROMETER MINIMUM
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46NYL0N
UL94V-0
SD-52559-049
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