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    PanJit Group SDM1060LCS_S2_00001

    DIODE ARRAY SCHOTT 60V 5A TO252
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    DigiKey SDM1060LCS_S2_00001 Cut Tape 2,869 1
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    SDM1060LCS_S2_00001 Reel
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    Panduit Corp FLCSSCBUY

    THE LC OPTICAM SINGLEMODE SIMPL
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    DigiKey FLCSSCBUY Box 89 1
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    Avnet Americas FLCSSCBUY Bulk 10 Weeks, 3 Days 1
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    Mouser Electronics FLCSSCBUY 1
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    Newark FLCSSCBUY Bulk 66 1
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    RS FLCSSCBUY Bulk 5 1
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    Master Electronics FLCSSCBUY 20
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    Sager FLCSSCBUY 1
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    TestEquity LLC FLCSSCBUY
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    iComTech Inc CBF-LC03LC-SS

    LC To LC 3 Meter Single-Mode Sim
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    DigiKey CBF-LC03LC-SS 3 1
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    Infineon Technologies AG REFISOPLCSSR24VTOBO1

    REFISOPLCSSR24VTOBO1
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    DigiKey REFISOPLCSSR24VTOBO1 Box 1 1
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    Mouser Electronics REFISOPLCSSR24VTOBO1 3
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    Newark REFISOPLCSSR24VTOBO1 Bulk 1
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    Panduit Corp FLCSSCBUYG

    FIBER CONN SIMPLEX LC OPTICAM
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    LCSS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P09N03

    Abstract: No abstract text available
    Text: PRELIMINARY PMC-Sierra, Inc. PM9311/2/3/5 ETT1 CHIP SET Data Sheet PMC-2000164 ISSUE 1 ENHANCED TT1™ SWITCH FABRIC PM9311/2/3/5 Enhanced TT1 Chip Set Enhanced TT1 Switch Fabric Datasheet Preliminary: April 2000 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE


    Original
    PDF PMC-2000164 PM9311/2/3/5 P09N03

    MIP3226D3R3M

    Abstract: MIP3226D4R7M 16V DC to 12v dc 5 amp converter circuit diagram 3526 NP03SB6R8M NR3012T MIP3226 LTC3526L MIPF2520D4R7 fb 1225
    Text: LTC3526L/LTC3526LB 550mA 1MHz Synchronous Step-Up DC/DC Converters in 2mm x 2mm DFN DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Delivers 3.3V at 100mA from a Single Alkaline/ NiMH Cell or 3.3V at 200mA from Two Cells VIN Start-Up Voltage: 680mV


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    PDF LTC3526L/LTC3526LB 550mA 100mA 200mA 680mV LTC3526L) LT3526LB) 3526L/LTC3526LB SC-70 LTC3525L-3 MIP3226D3R3M MIP3226D4R7M 16V DC to 12v dc 5 amp converter circuit diagram 3526 NP03SB6R8M NR3012T MIP3226 LTC3526L MIPF2520D4R7 fb 1225

    a1273 transistor DATA

    Abstract: a1273 transistor a1273 transistor scheme transistor A1267 a1273 80188 Programmers Reference Manual A1266 transistor a1271 transistor A1273 transistor A1270
    Text: 80C186EB/80C188EB Microprocessor User’s Manual 80C186EB/80C188EB Microprocessor User’s Manual February 1995 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions


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    PDF 80C186EB/80C188EB sa-16 a1273 transistor DATA a1273 transistor a1273 transistor scheme transistor A1267 a1273 80188 Programmers Reference Manual A1266 transistor a1271 transistor A1273 transistor A1270

    A1306 TRANSISTOR

    Abstract: A1273 A1266 transistor a1266 a1273 transistor a1232 transistor A1267 transistor a1276 a1273 transistor scheme a1273 y transistor
    Text: 80C186EC/80C188EC Microprocessor User’s Manual 80C186EC/80C188EC Microprocessor User’s Manual 1995 Order Number 272047-003 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including


    Original
    PDF 80C186EC/80C188EC 82C59A Index-10 A1306 TRANSISTOR A1273 A1266 transistor a1266 a1273 transistor a1232 transistor A1267 transistor a1276 a1273 transistor scheme a1273 y transistor

    Hitachi DH* motor circuit

    Abstract: HA13491S
    Text: H A 1 3 4 9 1 S -Three-Phase Motor Driver With Speed Discriminator Description HA13491S T h e H A 1 3 4 9 1 S is a 3 -p h asc b ru sh lcss m o to r d riv e IC de sig n ed for use as a 5- and 12-volt H D D sp in d le m otor driver. It has the fo llo w in g functions and features.


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    PDF 12-volt HA13491S P-26DT) Hitachi DH* motor circuit HA13491S

    transistor D128

    Abstract: TC518129 D128 transistor transistor d133 ksh 200 TRANSISTOR equivalent TRANSISTOR 80l
    Text: TOSHIBA TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 TC518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. TheTC518129B utilizes


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    PDF TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 C518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L TC518129B TheTC518129B D-132 TC518129BPL/BSPL/BFL/BFWL/BFTL-70/80/10 C518129BPL/BSPL/BFL/BFWL/BFTL-70L/80L/1OL D-133 transistor D128 TC518129 D128 transistor transistor d133 ksh 200 TRANSISTOR equivalent TRANSISTOR 80l

    CDB4222

    Abstract: CS4222 CS4222-KS 20-bit audio codec
    Text: CS4222 A Cirrus Logic Company 20-Bit Stereo Audio Codec with Voiume Control Features Description 99 dB 20-bit A/D Converters 99 dB 20-bit D/A Converters 110 dB DAC Signal-to-Noise Ratio EIAJ Analog Volume Control - 0.5 dB Step Resolution - 113.5 dB Attenuation


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    PDF CS4222 20-Bit 48kHz CS4222 20-bit, DS236PP3 254b3E4 CDB4222 CS4222-KS 20-bit audio codec

    mg80c186

    Abstract: 523ap order 231369 M801 80C186EB
    Text: in te i M80C186EB-16, -13, -8 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSOR • Full Static Operation • True CMOS Inputs and Outputs • —55°C to + 125°C Operating Temperature Range • Integrated Feature Set — Low-Power Static CPU Core — Two Independent UARTs each with


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    PDF M80C186EB-16, 16-BIT M80C186EB-16) M80C186EB-13) M80C186EB-8) mg80c186 523ap order 231369 M801 80C186EB

    Untitled

    Abstract: No abstract text available
    Text: * 1 SCS-THOMSON / R a n a @ i i L i g r e w n e § S T L C 5 4 1 1 2B1Q U INTERFACE DEVICE ADVANCE DATA G ENERAL FEATURES • SINGLE CHIP 2B1Q LINE CODE TRANS­ CEIVER ■ SUITABLE FOR BOTH ISDN AND PAIR GAIN


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    PDF PLCC44 STLC5411FN tt92SrS4t9 7T2T237 STLC5411 GGb372S

    74hct124

    Abstract: MT9160AE U317A be41
    Text: i s o 2- c m o s M ITEL MT9160 5 Volt Multi-Featured Codec MFC Preliminary Information Features ISSUE 3 May 1995 O rdering Inform ation • Programmable ji-Law/A-Law Codec and Filters • Programmable CC ITT (G.711)/sign-magnitude coding • Programmable transmit, receive and side-tone


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    PDF MT9160 MT9160AE MT9160AS MT9160 150pF, 74hct124 U317A be41

    Untitled

    Abstract: No abstract text available
    Text: KM416V1000BJ CMOS D RA M ELECTRONICS 1 Mx 1 6 B i t CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


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    PDF KM416V1000BJ 1Mx16 40SOJ

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D 7 ^4 1 4 2 0 G1 S Ö 73 ‘t ë ô CMOS DRAM KM416C256A/AL/ALL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAc tRC 60ns 15ns 110ns KM416C256A/AÜALL-7 70ns 20ns 130ns


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    PDF KM416C256A/AL/ALL 256Kx 110ns KM416C256A/AÃ 130ns KM416C256A/AL/ALL-8 150ns KM416C256A/AUALL-6 40-LEAD

    Untitled

    Abstract: No abstract text available
    Text: BR93LC46 BR93LC46A BR93LC46F BR93LC46AF The BR93LC46/F and BR93LC46A/AF are CMOS serial input/output-type memory circuits EEPROMs that can be programmed electrically. Each can store up to 1024 bits in 64 sixteen bit words. Each word can be accessed separately.


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    PDF BR93LC46 BR93LC46A BR93LC46F BR93LC46AF BR93LC46/F BR93LC46A/AF

    13001 LZ

    Abstract: SR 13001 PA 13001
    Text: Advance information •■ II AS4VC1M16E5 2.5V 1Mx 16 CMOS lntelliwatt,v DRAM EDO Features • Organization: 1 ,0 4 8 ,5 7 6 w ords • H igh speed X • 10 24 refresh cycles, 16 m s refresh interval 16 bits - RAS-only or CAS-before-RAS refresh or self refresh


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    PDF AS4VC1M16E5 42-pin 44/50-pin AS4VC1M16E5-50JC AS4VC1M16E5-50TC AS4VC1M16E5-60JC AS4VC1M16E5-60TC 13001 LZ SR 13001 PA 13001

    Untitled

    Abstract: No abstract text available
    Text: MITEL" CMOS ST-BUS FAMILY Large Digital Switch Preliminary Information Features • • • • • • • • • • • • MT90820 ISSUE 1 2,048 x 2,048 channel non-blocking switching at 8.192 Mb/s Per-channel variable or constant throughput delay


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    PDF MT90820 048Mb/s, 096Mb/s 192Mb/s IEEE-1149 b24T3 QQ11A75

    as4c256k16eo

    Abstract: 256KX16 AS4C256K16E0 LO301
    Text: H ig h P e r fo r m a n c e 256K X 16 CM OS DRAM A S4C 256K 16E 0 A 2 5 6 K X 1 6 CM O S EDO DRAM Preliminary information Features • Extended data out • 512 refresh cycles, 8 ms refresh interval • Organization: 26 2 ,1 4 4 words X 16 bits • High speed


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    PDF AS4C256K16E0 256KX16 4C256K16E0-45) 40-pin I/015 I/014 as4c256k16eo LO301

    TI AIH

    Abstract: R 161 730 000
    Text: O K I Semiconductor MSM51 V17160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM51V17160 is OKI's CMOS silicon gate process technology.


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    PDF MSM51VI7160 576-Word 16-Bit MSM51V17160 cycles/32ms TI AIH R 161 730 000

    WD11C00-13

    Abstract: wd11c00
    Text: WESTERN O R P O R A DIGITAL T I O N WD11C00-13 C WD11C00-13 ECC Support Device FEATURES • 32-BIT COMPUTER SELECTED POLYNOMIAL • PARALLEL INPUT AND OUTPUT • DATA TRANSFER RATES UP TO 5 MBITS/SEC • RECORD LENGTH UP TO INCLUDING CHECK BYTES • TTL, MOS COMPATIBLE


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    PDF WD11C00-13 WD11C00-13 32-BIT WD11COO-13 wd11c00

    7C130

    Abstract: L1314
    Text: CY7C130/CY7C131 CY7C140/CY7C141 _ 1024 x 8 Dual-Port Static RAM aT ^ p -¿r CYPRESS ^ SEMICONDUCTOR E ach p o rt has independent control pins; chip enable C E , w rite enable (RyW), and output The CY 7C130/CY7C131/CY7C140/ enable (O E ). TVvo flags are p rovided on each


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    PDF CY7C130/CY7C131 CY7C140/ CY7C141 CY7C130/ CY7C131; CY7C140/CY7C141 7C130/CY7C131/CY7C140/ CY7C14 7C130 L1314

    7C106

    Abstract: FE 1.1s
    Text: CY7C106 P R ELIM IN A RY CYPRESS SEMICONDUCTOR 262,144 x 4 Static R/W RAM Features Functional Description • High speed T h e C Y 7 C 1 0 6 is a h ig h -p e rfo rm a n c e C M O S s ta tic R A M o rg a n iz e d a s 262,144 w o rd s by 4 bits. E a sy m e m o ry ex p a n sio n is


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    PDF CY7C106 7C106 FE 1.1s

    7B154

    Abstract: No abstract text available
    Text: CY7B153 CY7B154 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR Expandable 65,536 x 4 Static R/W RAM Features Functional Description • High speed T h e C Y 7B 153 a n d C Y 7 B 1 5 4 a rc h ig h -p e r­ fo rm a n c e B iC M O S s ta tic R A M s o rg a n iz e d


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    PDF CY7B153 CY7B154 7B154 7B153

    LC3517

    Abstract: LC3517B LC3517B-12 lc351 u351 BS1215 sanyo lc3517bm
    Text: SANY O S E M I C O N D U C T O R CORP S3E D • 7^707b 00100^ 2^6 M T S A J I Ordering number EN37521 CMOS LSI F SAW O i LC3517B. BM. BS, BL, BML, BSL. 2048-word x 8-bit CMOS Static RAM OVERVIEW PACKAGE DIMENSIONS LC3517B serves devices art silicon-gate CMOS, static


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    PDF EN3752] LC3517B, 2048-word LC3517B LC3517BL, LC3517BML LC3517BSL LC3517B/BM/BS-12/15 LC3517 LC3517B-12 lc351 u351 BS1215 sanyo lc3517bm

    MSM5416256

    Abstract: No abstract text available
    Text: O K I Semiconductor MSII5 4 1 6 2 5 8 A_ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258A is a 262,144-word x 16-bit configuration fast page mode type DRAM with EDO. The MSM5416258A achieves high integration, high-speed operation, and low-power consumption


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    PDF 144-Word 16-Bit MSM5416258A 40-pin MSM5416256

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily Tor use in horizontal deflection circuits of colour television receivers.


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    PDF BU508DX OT199