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    LB 122 NPN TRANSISTOR Search Results

    LB 122 NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    LB 122 NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VK200 rfc

    Abstract: vk200 vk200* FERROXCUBE vk200 rfc with 6 turns NTE320 T72 5VDC NTE320F vk200-20
    Text: NTE320/NTE320F Silicon NPN RF Power Transistor 40W @ 175MHz Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal amplifier applications required in commercial and industrial equipment operating to 300MHz.


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    PDF NTE320/NTE320F 175MHz NTE320 NTE320F 300MHz. 175MHz NTE320 NTE320F 1000pF 100pF VK200 rfc vk200 vk200* FERROXCUBE vk200 rfc with 6 turns T72 5VDC vk200-20

    LB 122 transistor

    Abstract: LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip122 tip120 TIP 122 transistor TIP 122 transistor tip 122
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complementary to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage : TIP120 Rating : TIP121 : TIP122 Collector-Emitter Voltag»


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    PDF TIP125/126/127 TIP120 TIP121 TIP122 TIP121 TIP120/121/122 120ft LB 122 transistor LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip120 TIP 122 transistor TIP 122 transistor tip 122

    tip127 darlington

    Abstract: TIP127 TIP122 TIP120 TIP121 TIP125 TIP126 tip122 tip127
    Text: SAN YO NPN TIP120 TIP121 TIP122 SEMICONDUCTOR DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP TIP125 TIP126 TIP127 60-80-100 VOLTS, 5 AMPERE HIGH CURRENT GAIN hFE = 2500 typ. @3V, 3A LOW SATURATION VOLTAGE V c e S A T = 1.0V typ. @2.5A MONOLITHIC CONSTRUCTION WITH BUILT-IN


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    PDF TIP120 TIP125 TIP121 TIP126 TIP122 TIP127 TIP120, TIP125 TIP121, TIP126 tip127 darlington TIP127 tip122 tip127

    LB 122 transistor

    Abstract: LB 122 NPN TRANSISTOR
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS C h a ra c te rist: TIP 1 20 C ollector-B ase V oltage : TIP 1 21 : TIP122 C ollector-E m ltter V o lta g ' TIP120


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    PDF TIP120/121/122 TIP122 TIP120 TIP121 LB 122 transistor LB 122 NPN TRANSISTOR

    LB 122 transistor

    Abstract: LB 122 NPN TRANSISTOR TIP 122 transistor TIP 122 100 V LB 121 NPN TRANSISTOR NPN Transistor VCEO 80V 100V tip120 to-220 npn darlington TRANSISTOR tip122 TIP120 TIP121
    Text: TIP I 20/121/122 NPN EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS Characterist TIP120 TIP121 C ollector-Base Voltage Sym bol Rating V c bO TIP122 C ollector-E m ltter Voltag


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    PDF TIP120/121 TIP125/126/127 TIP120 TIP121 TIP122 TIP121 O-220 LB 122 transistor LB 122 NPN TRANSISTOR TIP 122 transistor TIP 122 100 V LB 121 NPN TRANSISTOR NPN Transistor VCEO 80V 100V tip120 to-220 npn darlington TRANSISTOR tip122

    LB 122 transistor

    Abstract: LB 122 NPN TRANSISTOR
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO -220 • Complement to TIPI25/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Rating Unit V CBO 60 80 100 V V V V cE O 60 80 100 5 5 8 120


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    PDF TIPI25/126/127 TIP120 TIP121 TIP122 LB 122 transistor LB 122 NPN TRANSISTOR

    IP122

    Abstract: transistor darlington TIP-120 tip122c TIP120
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Symbol C o lle c to r-B a s e V o lta g e : TIP120 : TIP121 : TIP122


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    PDF TIP120/121/122 TIP125/126/127 TIP120 TIP121 TIP122 IP122 transistor darlington TIP-120 tip122c TIP120

    TIP 122 transistor

    Abstract: transistor tip 122 tip 120 tip 122 transistor darlington TIP-120 IP122 TIP 21 transistor
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • C o m p le m e n t lo T IP I 25/126/127 ABSOLUTE MAXIMUM RATINGS i C haracteristic S ym bol C o lle c to r-B a s e V o lta g e : TIP120 R ating 60


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    PDF TIP120 TIP121 TIP120/121/122 TIP 122 transistor transistor tip 122 tip 120 tip 122 transistor darlington TIP-120 IP122 TIP 21 transistor

    ic Lb 598 d

    Abstract: GS121 ic Lb 598 sgs120
    Text: S G S-THONSON D7E D I 7 ^ ^ 2 3 7 67C 15347 D 001744_S '7"- T 1 g S Î2 Ô S G S 1 2 5 3 SGSIEI SGSÎ26 1 SGS122 S6S127 EPITAXIAL-BASE NPN/PNP T'33 ~3 l POW ER D A R LIN G T O N S The SGS120, SGS121 and SG S122 are silicon epitaxial-base NPN transistors in monolithic


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    PDF SGS122 S6S127 SGS120, SGS121 OT-82 SGS125, 300fis, DD174M7 SGSt20 SGSI25 ic Lb 598 d GS121 ic Lb 598 sgs120

    transistor 42t

    Abstract: 2C5339 2C6193 chip die npn transistor
    Text: 5-A PNP Power Transistor Chips 2C6193 FEATURES CHIP TYPE: AL • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 50,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 10 Mils Nominal • Complement to NPN 2C5339


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    PDF 2C6193 2C5339 350fcS, transistor 42t 2C5339 2C6193 chip die npn transistor

    LB 122 transistor To-92

    Abstract: LB 122 NPN TRANSISTOR LB 122 transistor KSC815 KSA539 L300 samsung l300 TRANSISTOR A52
    Text: SAMSUNG SEMICONDUCTOR INC KSC815 IME D | 7 cJ b 4 m 2 OODbASl 2 | NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR TO-92 • Complement to KSA539 • Collector-Base Voltage Vcao=60V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic


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    PDF 71b4142 KSC815 KSA539 LB 122 transistor To-92 LB 122 NPN TRANSISTOR LB 122 transistor KSA539 L300 samsung l300 TRANSISTOR A52

    Untitled

    Abstract: No abstract text available
    Text: TIP29 SERIES' - TIP29/29A/29B/29C NPN EXITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS T O -2 2 0 • Complementary to TIP30/30A/30B/30C ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    PDF TIP29 TIP29/29A/29B/29C) TIP30/30A/30B/30C TIP29 TIP29A TIP29B TIP29C

    tip15

    Abstract: tip122 data tip12
    Text: MOTOROLA Order this document by TI P120/D SEMICONDUCTOR TECHNICAL DATA Plastic M edium -Pow er Com plem entary Silicon Transistors . . . d e sig ned for g e n e ra l-p u rp o s e am p lifie r and lo w -s p e e d sw itch ing applications. • • High DC C u rre n t G ain —


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    PDF P120/D 21A-06 O-220AB tip15 tip122 data tip12

    tip29

    Abstract: 29a transistor
    Text: TIP29 SERIES TIP29/29A/29B/29C NPN EXITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS I T O -220 • C omplementary to T IP 3 0/30 A /3 0B /30C ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    PDF TIP29 TIP29/29A/29B/29C) TIP29A IP29B TIP29C TIP29B 29a transistor

    CJD122

    Abstract: CJD127 transistor C4 016
    Text: Central" C JD 122 NPN C JD 127 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low


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    PDF cjd122 cjd127 CJD122, CJD122) CJD127) IHG017M2 transistor C4 016

    LB 122 transistor

    Abstract: TIP125 LB 127 transistor TIP127 TIP126 LB 122 NPN TRANSISTOR
    Text: TIP125/126/127 PNP EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem ent to TIP 120/121/122 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit -60 V : TIP126 -80 V : TIP127 C ollector E m itter Voltage -120


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    PDF TIP125/126/127 TIP120/121/122 TIP125 TIP126 TIP127 120Si LB 122 transistor LB 127 transistor TIP127 TIP126 LB 122 NPN TRANSISTOR

    TIP 122

    Abstract: texas instruments tip122 T1P120 TIP122 texas instrument TEXAS INSTRUMENTS TIP120 TIP 122 transistor TRANSISTOR tip122 TIP121 TEXAS TIP120 TIP121
    Text: TEXAS I N S T R -COPTO} 8961726 TEXAS bS INSTR D e | flTblTEb □□3bflci4 E | ~ 62C 3 6 8 9 4 OPTO TIPI 20, TIPI 21, TIPI 22 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 T -3 3 -2 9 Designed For Complementary use with TIP125, TIP126, T IP I27


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    PDF TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 T-33-29 to-22qab TIP120 TIP121 TIP 122 texas instruments tip122 T1P120 TIP122 texas instrument TEXAS INSTRUMENTS TIP120 TIP 122 transistor TRANSISTOR tip122 TIP121 TEXAS

    LB 122 transistor

    Abstract: No abstract text available
    Text: TIP125/126/127 PNP EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem ent to TIP 120/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollecto r Base Voltage : TIP 1 25 Rating Unit -60 V : TIP126 -80 V : TIP127


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    PDF TIP125/126/127 TIP126 TIP127 TIP125 LB 122 transistor

    Untitled

    Abstract: No abstract text available
    Text: Central" CJD200 NPN CJD210 PNP Sem iconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD200, CJD210 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current


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    PDF CJD200 CJD210 CJD200, CJD210)

    Untitled

    Abstract: No abstract text available
    Text: Central CJD200 NPN CJD210 PNP semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD200, CJD210 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current


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    PDF CJD200 CJD210 CJD200, CD210)

    PNP POWER TRANSISTOR T1P122

    Abstract: T1P122 TRANSISTOR tip122 TIP 122 transistor tip120 motorola TIP127 circuit TIP127
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P lastic M edium -Pow er Com plem entary Silicon Transistors . . . designed for general-purpose amplifier and low-speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ lc = 4.0 Adc • Coiiector-Emitter Sustaining Voltage — @ 100 mAdc


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    PDF TIP120, TIP125 TIP121, TIP126 O-220AB TIP126 TIP127 TIP122 PNP POWER TRANSISTOR T1P122 T1P122 TRANSISTOR tip122 TIP 122 transistor tip120 motorola TIP127 circuit TIP127

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 4 bE » • ti3tj72SH 00=12470 3 ■ MOTfc, MOTOROLA i S E M IC O N D U C T O R TECHNICAL DATA Discrete Military Products NPN Silicon Power Transistors M J6274 M J6277 DM0 Suffixes: /#///#/ HX, HXV Processed per MIL-S-19500/xxx . d e sign e d for ge n e ra l-p u rp o se p o w e r sw itch in g and am plifier applications


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    PDF ti3tj72SH J6274 J6277 MIL-S-19500/xxx MJ6274 O-116)

    LB 124 transistor

    Abstract: LB 122 transistor
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB GENERAL DESCRIPTION High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications.


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    PDF BU1706AB LB 124 transistor LB 122 transistor

    KSC2333

    Abstract: NPN Transistor TO220 vcc 150V transistor 400v 3a 40w 180MH KSA940 KSC2073 KSC2233 KSC2335 samsung tv YS 150 003 b
    Text: SAMSUNG SEM ICONDUCTOR INC KSC2Ö73 l^ E D | GOOTSMb 2 NPN EPITAXIAL SILICON TRANSISTOR r - 3 3 - o q TV VERTICAL DEFLECTION OUTPUT TO-220 • Complement to KSA940 • Collector-Base Voltage Vcso=150V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic ; I


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    PDF KSC2073 KSA940 r-33-ctf O-220 KSC2333 NPN Transistor TO220 vcc 150V transistor 400v 3a 40w 180MH KSA940 KSC2233 KSC2335 samsung tv YS 150 003 b