LB 122 transistor
Abstract: LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip122 tip120 TIP 122 transistor TIP 122 transistor tip 122
Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complementary to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage : TIP120 Rating : TIP121 : TIP122 Collector-Emitter Voltag»
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TIP125/126/127
TIP120
TIP121
TIP122
TIP121
TIP120/121/122
120ft
LB 122 transistor
LB 122 NPN TRANSISTOR
LB 122 NPN
LB 121 NPN TRANSISTOR
LB 127 transistor
tip120
TIP 122 transistor
TIP 122
transistor tip 122
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tip127 darlington
Abstract: TIP127 TIP122 TIP120 TIP121 TIP125 TIP126 tip122 tip127
Text: SAN YO NPN TIP120 TIP121 TIP122 SEMICONDUCTOR DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP TIP125 TIP126 TIP127 60-80-100 VOLTS, 5 AMPERE HIGH CURRENT GAIN hFE = 2500 typ. @3V, 3A LOW SATURATION VOLTAGE V c e S A T = 1.0V typ. @2.5A MONOLITHIC CONSTRUCTION WITH BUILT-IN
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TIP120
TIP125
TIP121
TIP126
TIP122
TIP127
TIP120,
TIP125
TIP121,
TIP126
tip127 darlington
TIP127
tip122 tip127
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LB 122 transistor
Abstract: LB 122 NPN TRANSISTOR
Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS C h a ra c te rist: TIP 1 20 C ollector-B ase V oltage : TIP 1 21 : TIP122 C ollector-E m ltter V o lta g ' TIP120
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TIP120/121/122
TIP122
TIP120
TIP121
LB 122 transistor
LB 122 NPN TRANSISTOR
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LB 122 transistor
Abstract: LB 122 NPN TRANSISTOR TIP 122 transistor TIP 122 100 V LB 121 NPN TRANSISTOR NPN Transistor VCEO 80V 100V tip120 to-220 npn darlington TRANSISTOR tip122 TIP120 TIP121
Text: TIP I 20/121/122 NPN EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS Characterist TIP120 TIP121 C ollector-Base Voltage Sym bol Rating V c bO TIP122 C ollector-E m ltter Voltag
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TIP120/121
TIP125/126/127
TIP120
TIP121
TIP122
TIP121
O-220
LB 122 transistor
LB 122 NPN TRANSISTOR
TIP 122 transistor
TIP 122 100 V
LB 121 NPN TRANSISTOR
NPN Transistor VCEO 80V 100V
tip120 to-220 npn darlington
TRANSISTOR tip122
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IP122
Abstract: transistor darlington TIP-120 tip122c TIP120
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Symbol C o lle c to r-B a s e V o lta g e : TIP120 : TIP121 : TIP122
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TIP120/121/122
TIP125/126/127
TIP120
TIP121
TIP122
IP122
transistor darlington TIP-120
tip122c
TIP120
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LB 122 transistor
Abstract: LB 122 NPN TRANSISTOR
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO -220 • Complement to TIPI25/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Rating Unit V CBO 60 80 100 V V V V cE O 60 80 100 5 5 8 120
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TIPI25/126/127
TIP120
TIP121
TIP122
LB 122 transistor
LB 122 NPN TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: Central CMLT2207 Semiconductor Corp. SURFACE MOUNT PICOmini DUAL,COMPLEMENTARY SILICON TRANSISTORS MAXIMUM RATINGS: DESCRIPTION: The Central Semiconductor CMLT2207 con sists of one 2N2222A NPN silicon transistor and one individual isolated complementary
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CMLT2207
2N2222A
2N2907A
OT-563
x10-4
OT-563
13-November
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ic Lb 598 d
Abstract: GS121 ic Lb 598 sgs120
Text: S G S-THONSON D7E D I 7 ^ ^ 2 3 7 67C 15347 D 001744_S '7"- T 1 g S Î2 Ô S G S 1 2 5 3 SGSIEI SGSÎ26 1 SGS122 S6S127 EPITAXIAL-BASE NPN/PNP T'33 ~3 l POW ER D A R LIN G T O N S The SGS120, SGS121 and SG S122 are silicon epitaxial-base NPN transistors in monolithic
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SGS122
S6S127
SGS120,
SGS121
OT-82
SGS125,
300fis,
DD174M7
SGSt20
SGSI25
ic Lb 598 d
GS121
ic Lb 598
sgs120
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tip15
Abstract: tip122 data tip12
Text: MOTOROLA Order this document by TI P120/D SEMICONDUCTOR TECHNICAL DATA Plastic M edium -Pow er Com plem entary Silicon Transistors . . . d e sig ned for g e n e ra l-p u rp o s e am p lifie r and lo w -s p e e d sw itch ing applications. • • High DC C u rre n t G ain —
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P120/D
21A-06
O-220AB
tip15
tip122 data
tip12
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TIP 122 transistor
Abstract: transistor tip 122 tip 120 tip 122 transistor darlington TIP-120 IP122 TIP 21 transistor
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • C o m p le m e n t lo T IP I 25/126/127 ABSOLUTE MAXIMUM RATINGS i C haracteristic S ym bol C o lle c to r-B a s e V o lta g e : TIP120 R ating 60
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TIP120
TIP121
TIP120/121/122
TIP 122 transistor
transistor tip 122
tip 120
tip 122
transistor darlington TIP-120
IP122
TIP 21 transistor
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LB 122 transistor To-92
Abstract: LB 122 NPN TRANSISTOR LB 122 transistor KSC815 KSA539 L300 samsung l300 TRANSISTOR A52
Text: SAMSUNG SEMICONDUCTOR INC KSC815 IME D | 7 cJ b 4 m 2 OODbASl 2 | NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR TO-92 • Complement to KSA539 • Collector-Base Voltage Vcao=60V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic
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71b4142
KSC815
KSA539
LB 122 transistor To-92
LB 122 NPN TRANSISTOR
LB 122 transistor
KSA539
L300
samsung l300
TRANSISTOR A52
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Untitled
Abstract: No abstract text available
Text: TIP29 SERIES' - TIP29/29A/29B/29C NPN EXITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS T O -2 2 0 • Complementary to TIP30/30A/30B/30C ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage
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TIP29
TIP29/29A/29B/29C)
TIP30/30A/30B/30C
TIP29
TIP29A
TIP29B
TIP29C
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260TC
Abstract: KSE3055T
Text: NPN SILICON TRANSISTOR KSE3055T GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES TO-220 High Current Gain-Bandwidth Product fr = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emltter Voltage
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KSE3055T
O-220
200mA,
500mA,
500KHz
DQ25554
260TC
KSE3055T
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tip29
Abstract: 29a transistor
Text: TIP29 SERIES TIP29/29A/29B/29C NPN EXITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS I T O -220 • C omplementary to T IP 3 0/30 A /3 0B /30C ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage
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TIP29
TIP29/29A/29B/29C)
TIP29A
IP29B
TIP29C
TIP29B
29a transistor
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LB 122 transistor
Abstract: TIP125 LB 127 transistor TIP127 TIP126 LB 122 NPN TRANSISTOR
Text: TIP125/126/127 PNP EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem ent to TIP 120/121/122 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit -60 V : TIP126 -80 V : TIP127 C ollector E m itter Voltage -120
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TIP125/126/127
TIP120/121/122
TIP125
TIP126
TIP127
120Si
LB 122 transistor
LB 127 transistor
TIP127
TIP126
LB 122 NPN TRANSISTOR
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LB 122 transistor
Abstract: No abstract text available
Text: TIP125/126/127 PNP EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem ent to TIP 120/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollecto r Base Voltage : TIP 1 25 Rating Unit -60 V : TIP126 -80 V : TIP127
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TIP125/126/127
TIP126
TIP127
TIP125
LB 122 transistor
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Untitled
Abstract: No abstract text available
Text: Central semiconductor Corp. CJD122 NPN CJD127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low
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CJD122
CJD127
CJD122,
CJD127)
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BM sot223 marking code
Abstract: No abstract text available
Text: Central CBCP68 NPN CBCP69 PNP Semiconductor Corp. SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR, CBCP68, CBCP69 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount
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CBCP68
CBCP69
CBCP68,
OT-223
26-September
OT-223
BM sot223 marking code
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KSC2333
Abstract: NPN Transistor TO220 vcc 150V transistor 400v 3a 40w 180MH KSA940 KSC2073 KSC2233 KSC2335 samsung tv YS 150 003 b
Text: SAMSUNG SEM ICONDUCTOR INC KSC2Ö73 l^ E D | GOOTSMb 2 NPN EPITAXIAL SILICON TRANSISTOR r - 3 3 - o q TV VERTICAL DEFLECTION OUTPUT TO-220 • Complement to KSA940 • Collector-Base Voltage Vcso=150V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic ; I
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KSC2073
KSA940
r-33-ctf
O-220
KSC2333
NPN Transistor TO220 vcc 150V
transistor 400v 3a 40w
180MH
KSA940
KSC2233
KSC2335
samsung tv
YS 150 003 b
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications.
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BU1706A
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transistor BF 697
Abstract: BF 273 transistor transistor l81
Text: BSV52 . Æ ^Æ N a t i o n a l Di scret e POWER & Signal Technologies Semiconductor BSV52 Mark: B2 NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 m Ato 100 mA. Sourced from Process 21. Absolute Maximum Ratings*
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BSV52
bSD113Q
bS01130
transistor BF 697
BF 273 transistor
transistor l81
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tip73
Abstract: c2688 L TIP73A 1N914M 1N914F C2688
Text: TEXAS INSTR {OPTO} tâ DErjflTblT St. Ô 9 6 1 7 2 6 TEXAS INSTR OPÏUJ 003LÛ44 62C 36844 TIP73, TIP73A, TIP73B, TIP73C N-P-N SILICON POWER TRANSISTORS T - J J - f J F E B R U A R Y 1 9 7 7 - R E V IS E D O C T O B E R 1 9 8 4 Designed for Complementary Use with TIP74, TIP74A, TIP74B,
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TIP73,
TIP73A,
TIP73B,
TIP73C
TIP74,
TIP74A,
TIP74B,
TIP74C
2N6486.
2N6487
tip73
c2688 L
TIP73A
1N914M
1N914F
C2688
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transistor MRF 254
Abstract: MRF561 Motorola transistors M 724 MRF560 724 motorola NPN Transistor R/High frequency MRF transistor case 317-01 317A-01 High frequency MRF transistor k 724
Text: MOTOROLA SC -CXSTRS/R 34 F> DËJfa3fci7SS4 □D41Dflb b | _ T ' l t - t l MRF560 MRF561 MRF562 MRF563 MRFC592 The R F Line A d v a n c e Information NPN SILICON HIGH FREQUENCY TRANSISTORS The MRF560 series transistors use the same state-of-the art microwave transistor chip which features fine-line geometry, ionimplanted arsenic emitters and gold top metalization. These tran
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D41Dflb
MRF560
MRF561
MRF562
MRF563
MRFC592
MRF560
MRF561
transistor MRF 254
Motorola transistors M 724
724 motorola NPN Transistor
R/High frequency MRF transistor
case 317-01
317A-01
High frequency MRF transistor
k 724
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Untitled
Abstract: No abstract text available
Text: 30E D • 7 ^ 2 3 7 0030^3^ f Z 7 S G S -T H O M S O N ^ IlL E O g ilià llO ïï^ M O O S S G S-TH0MS0N G ■ ' T ;3 3 " O f? BF457 B F 4 58 -B F 45 9 HIGH VOLTAGE VIDEO AMPLIFIERS DESCRIPTIO N The BF457, BF458 and BF459 are silicon planar epitaxial NPN transistors in Jedec TO-126 plastic
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BF457
BF457,
BF458
BF459
O-126
T-33-05
F457-B
F458-BF459
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