Untitled
Abstract: No abstract text available
Text: DATASHEET Photon Detection C30985E 25-Element Silicon Avalanche Photodiode Si APD Linear Array The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach through” structure. This structure provides high responsivity up to 1060 nm incidence radiation and even beyond, as well as
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C30985E
25-Element
C30985E
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TIA-445-3A
Abstract: TALP1000B coil gold detector ladar coil gold detector circuit PRPN062PAEN side mirror control
Text: TALP1000B www.ti.com . SLBS006A – NOVEMBER 2004 – REVISED SEPTEMBER 2009 Dual-Axis Analog MEMS Pointing Mirror Check for Samples: TALP1000B
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TALP1000B
SLBS006A
13-Bit
TIA-445-3A
TALP1000B
coil gold detector
ladar
coil gold detector circuit
PRPN062PAEN
side mirror control
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Abstract: No abstract text available
Text: PRODUCT SUMMARY 1645 nm Q-switched Diode-Pumped Solid State Laser The Princeton Lightwave Q-switched diode-pumped solid-state laser Q-DPSSL provides highenergy mJ-class optical pulses at an eye-safe short-wave infrared wavelength of 1645 nm. This laser employs resonant pumping of an Er:YAG gain medium using technology pioneered by
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TEM00
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Untitled
Abstract: No abstract text available
Text: PLA-8XX – Sub-Nanosecond, High Sensitivity APD Front End Receiver Module Product Features • • • • • 80 µm InGaAs APD ultra-low noise TIA 500 MHz bandwidth Overload protection circuitry Industry leading sensitivity and overload performance Small form-factor
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PLA-861
PLA-861
12-pin
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Untitled
Abstract: No abstract text available
Text: PLA-200 & PLA-280: High Sensitivity Large Area APD Components Product Features • 80 or 200 µm InGaAs APD Small form-factor design Low dark current High reliability, epoxy free, hermetic packaging High responsivity in the 0.95-1.65 um wavelength
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PLA-200
PLA-280:
PLA-280,
PLA-200
PLA-080
PLA-200:
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641 FET
Abstract: No abstract text available
Text: PLA-6XX – High Sensitivity APD Front End Receiver Modules Product Features • 80 or 200 µm InGaAs APD ultra-low noise TIA 100 MHz bandwidth Overload protection circuitry Industry leading sensitivity and overload performance Small form-factor
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PLA-66X
PLA-662
50-ohms,
PLA-661
PLA-662
641 FET
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CAM32X32B-GMA-0
Abstract: 0/ladar microlens array
Text: PRODUCT SUMMARY 32 x 32 Geiger-mode Avalanche Photodiode GmAPD Camera The Princeton Lightwave 32 x 32 Geiger-mode avalanche photodiode (GmAPD) camera is a turn-key system containing a single-photon imaging sensor designed for three-dimensional laser radar imaging
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MD651D
Abstract: No abstract text available
Text: Euvis Product Catalog MD651D – High Speed > 4GHz MUXDAC VccP +3.3V VEE/VEED/VEEA (-5.0V) VCC (GND) 24 A[0:11]_P/N 24 48:12 MUX B[0:11]_P/N 24 C[0:11]_P/N LATCH LSB 12-bit DAC 2 OUT_P/N 24 D[0:11]_P/N MSB AVC 2 CKI_P/N ÷4 VTT ÷2 SELECTOR 2 2 CK8O_P/N
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MD651D
12-bit
12-bit
MD651Dâ
MD651D
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Untitled
Abstract: No abstract text available
Text: Wearables, IoT, Sensor, Power & Interface Components LINEAR DIMENSIONS SEMICONDUCTOR Components & Modules, Sensors, Algorithms & Apps Table of Contents Interface Solutions .2
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408-914-ASIC
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TIA-445-3A
Abstract: No abstract text available
Text: Not Recommended For New Designs TALP1000B www.ti.com . SLBS006A – NOVEMBER 2004 – REVISED SEPTEMBER 2009 Dual-Axis Analog MEMS Pointing Mirror
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TALP1000B
SLBS006A
13-Bit
TIA-445-3A
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MD681S
Abstract: No abstract text available
Text: Euvis Product Catalog MD681S – High Speed > 4GHz MUXDAC VTTD 12 A[0:11] 12 B[0:11] 96:12 MUX 12 12 G[0:11] LATCH LSB 12-bit DAC MSB 1 RESET AVC 2 CKI_P/N VTT 2 ÷8 TMPI TMPO LVDS SELECTOR SEL1 Applications • • • • • • • • • • • •
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MD681S
12-bit
12-bit
MD681Sâ
MD681S
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coil gold detector circuit
Abstract: optical steering angle sensor ladar TALP1000B TIA-445-3A
Text: Not Recommended For New Designs TALP1000B www.ti.com . SLBS006A – NOVEMBER 2004 – REVISED SEPTEMBER 2009 Dual-Axis Analog MEMS Pointing Mirror
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TALP1000B
SLBS006A
13-Bit
coil gold detector circuit
optical steering angle sensor
ladar
TALP1000B
TIA-445-3A
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InGaAs apd photodiode
Abstract: MAR 609 InGaas PIN photodiode, 1550 NEP InGaAs APD photodiode 1550 Tomography VBD1 photodiode 1550 NEP photodiode InGaAs NEP backside illuminated ingaas photodiode LIDAR
Text: SU200-01A-TO SU200-01A-SM Large Area InGaAs APDs The largest commercially available InGaAs APD, the SU200-01A is ideal for 1.25 Gbps free space optical communications laser range-finding applications, OTDR and high resolution Optical Coherence Tomography.
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SU200-01A-TO
SU200-01A-SM
SU200-01A
03-Mar-05
InGaAs apd photodiode
MAR 609
InGaas PIN photodiode, 1550 NEP
InGaAs APD photodiode 1550
Tomography
VBD1
photodiode 1550 NEP
photodiode InGaAs NEP
backside illuminated ingaas photodiode
LIDAR
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MD662H
Abstract: No abstract text available
Text: Euvis Product Catalog MD662H – Double Sampling Rate > 8 Gsps MUXDAC VCCP +3.3V VEE/VEED/VEEA (-5.0V) VCC (GND) 24 A[0:11]_P/N 24 B[0:11]_P/N 24 C[0:11]_P/N 48:24 MUX 24 24 D[0:11]_P/N 24 Double Sampling Rate 12-bit DAC Current Switches 2 CKI_P/N VTT ÷2
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MD662H
12-bit
MD662H
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LIDAR
Abstract: No abstract text available
Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Diffractive Beam Splitters Diffractive Beam Splitters are periodic phase structures that split the input beam into multiple diffractive orders
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029120-003-99-14-0410-en
LIDAR
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Untitled
Abstract: No abstract text available
Text: 80 & 200 m InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339757-VAR Description CMC Electronics’ 264-339757-VAR are using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The
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264-339757-VAR
264-339757-VAR
12-lead
1000-1600nm
200um
Opto757-VAR
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PNA-208
Abstract: No abstract text available
Text: PNA-20X Negative Feedback Avalanche Diodes NFADs Product Features • Single photon sensitivity SWIR (1000 – 1700 nm) response High gain and low noise Fast response with precise timing Compact and robust Simple readout
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PNA-20X
8642E-03,
3085E-04,
0660E-07
PNA-208
PNA-208
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MD652D
Abstract: No abstract text available
Text: Euvis Product Catalog MD652D – High Speed > 4GHz MUXDAC VccP +3.3V VEE/VEED/VEEA (-5.0V) VCC (GND) 24 A[0:11]_P/N 24 48:12 MUX B[0:11]_P/N 24 C[0:11]_P/N LATCH LSB 12-bit DAC 2 OUT_P/N 24 D[0:11]_P/N MSB AVC 2 CKI_P/N VTT ÷4 ÷2 SELECTOR 2 2 CK8O_P/N
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MD652D
12-bit
12-bit
MD652Dâ
MD652D
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MD622P
Abstract: No abstract text available
Text: Euvis Product Catalog MD622P – High Speed > 4Gsps MUXDAC VCCP/DVCCP/AVCCP + 5V GND 24 24:12 MUX A[0:11]_P/N B[0:11]_P/N LATCH 24 LSB 12-bit DAC 2 OUT_P/N MSB MDSL 50Ω CKIP CKIN ÷2 SELECTOR 2 50Ω CK2O_P/N 2 RESET_P/N SEL1 SEL2 Key Features Applications
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MD622P
12-bit
12-bit
MD622Pâ
MD622P
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D2604
Abstract: No abstract text available
Text: TL136C QUAD HIGH-PERFORMANCE OPERATIONAL AMPLIFIER D2604', NOVEMBER 19S1 - MAY 1988 • Continuous-Short Circuit Protection N PACKAGE TOP VIEW • Wide Common-Mode and Differential Voltage Ranges r o u t : U l 4 H OUT'» AMPL IN- c 2 13 □ IN#1 12 n in+
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TL136C
D2604'
uA741
V01V02
D2604
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