transistor mark l6
Abstract: KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23
Text: KST1623L3/L4/L5/L6/L7 KST1623L3/L4/L5/L6/L7 Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 50 Units
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KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
transistor mark l6
KST1623L6
KST1623L3
KST1623L4
KST1623L5
KST1623L7
sot-23 Marking l7
SOT23 MARKING L7
marking L5 sot-23
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DIODE marking L4
Abstract: marking l4 sot-23 BAT54 marking L4
Text: Schottky Barrier Diode BAT54 200 mA SOT-23 1. Anode 2. NC 3. Cathode GENERAL PURPOSE DETEDTION HIGH SPEED SWITCHING LOW REVERSE CURRENT AND FORWARD VLOTAGE MARKING: L4 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS Reverse Voltage
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BAT54
OT-23
100mA
DIODE marking L4
marking l4 sot-23
BAT54
marking L4
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KST1623L7
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage
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KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
KST1623L4
KST1623L5
KST1623L6
KST1623L7
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SI2304BDS
Abstract: No abstract text available
Text: Si2304BDS Vishay Siliconix New Product N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* *Marking Code Ordering Information: Si2304BDS-T1
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Si2304BDS
O-236
OT-23)
Si2304BDS-T1
S-32137--Rev.
27-Oct-03
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Untitled
Abstract: No abstract text available
Text: DRA2123J Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2123J Unit: mm • Features Low collector-emitter saturation voltage VCE sat Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: L4
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DRA2123J
DRC2123J
UL-94
DRA2123J0L
SC-59A
O-236ts.
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Untitled
Abstract: No abstract text available
Text: PDF: 2001 Apr 04 Philips Semiconductors Package outline Plastic single-ended multi-chip package; 6 interconnections; 5 in-line leads SOT637 HE1 A E F1 Q1 R L1 bp1 F D D3 D2 L D3 A B HE SENSOR DIE POSITION centre of reading point D1 * L4 L3 L2 1 2 3 4 5 bp
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OT637
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Si2304BDS
Abstract: Si2304BDS-T1
Text: Si2304BDS Vishay Siliconix New Product N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* *Marking Code Ordering Information: Si2304BDS-T1—E3
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Si2304BDS
O-236
OT-23)
Si2304BDS-T1--E3
S-32412--Rev.
24-Nov-03
Si2304BDS-T1
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Untitled
Abstract: No abstract text available
Text: PDF: 2002 Jan 18 Philips Semiconductors Package outline Plastic single-ended multi-chip package; 6 interconnections; 5 in-line leads SOT637 HE1 A E F1 Q1 R L1 bp1 F D D3 D2 L D3 A B HE SENSOR DIE POSITION centre of reading point D1 * L4 L3 L2 1 2 3 4 5 bp
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OT637
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Untitled
Abstract: No abstract text available
Text: Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 lead form option SOT263B-01 E p1 A ∅p A1 q D1 mounting base D L3 L L1 R L4 m 1 L2 5 e b R w M c Q Q1 Q2 5 10 mm scale DIMENSIONS mm are the original dimensions
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O-220
OT263B-01
O-220
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Untitled
Abstract: No abstract text available
Text: Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 lead form option SOT263-01 E A A1 p q D1 mounting base D L3 L L1 R L4 m 1 L2 5 e b R w M c Q Q1 Q2 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT
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O-220
OT263-01
O-220
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SOT827-1
Abstract: SOT-827 sot827 030729 L227
Text: PDF: 2003 Jul 29 Philips Semiconductors Package outline DBS27P: plastic DIL-bent-SIL special bent power package; 27 leads (lead length 6.8 mm) SOT827-1 non-concave Dh x D Eh view B: mounting base side A2 d B j E A L4 L3 L 1 L2 27 e1 Z w M bp e c Q v M e2
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DBS27P:
OT827-1
SOT827-1
SOT-827
sot827
030729
L227
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SOT637
Abstract: ABP1
Text: Package outline Philips Semiconductors Plastic single-ended multi-chip package; 6 interconnections; 5 in-line leads SOT637 HE1 E A F1 Q1 R L1 bp1 F D D3 1 D2 L D3 (1) A A HE SENSOR DIE POSITION centre of reading point D1 * B L4(1) Q1 L3 A L2 1 2 3 4 5 bp
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OT637
SOT637
ABP1
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Untitled
Abstract: No abstract text available
Text: Package outline DBS37P: plastic DIL-bent-SIL power package; 37 leads lead length 6.8 mm SOT725-1 non-concave Dh x D Eh view B: mounting base side A2 d B j E A L4 L3 L 1 L2 37 e1 Z w M bp e c Q v M e2 m 10 20 mm scale DIMENSIONS (mm are the original dimensions)
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DBS37P:
OT725-1
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DBS37P
Abstract: No abstract text available
Text: PDF: 2002 Nov 22 Philips Semiconductors Package outline DBS37P: plastic DIL-bent-SIL power package; 37 leads lead length 6.8 mm SOT725-1 non-concave Dh x D Eh view B: mounting base side A2 d B j E A L4 L3 L 1 L2 37 e1 Z w M bp e c Q v M e2 m 10 20 mm scale
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DBS37P:
OT725-1
DBS37P
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Untitled
Abstract: No abstract text available
Text: Package outline DBS27P: plastic DIL-bent-SIL special bent power package; 27 leads (lead length 6.8 mm) SOT919-1 non-concave Dh x D Eh view B: mounting base side A2 d B j E A L4 L3 L 1 L2 27 e1 Z w M bp e c Q v M e2 m 10 20 mm scale DIMENSIONS (mm are the original dimensions)
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DBS27P:
OT919-1
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Untitled
Abstract: No abstract text available
Text: Package outline DBSMS27P: plastic dual bent surface mounted SIL power package; 27 leads SOT1154-1 L4 L3 θ2 gauge plane seating plane A3 S R 1 R 2 D y Lp1 θ1 Lp2 aaa S detail X non-concave x d A2 Dh Eh E j 27 L1 1 L2 A1 e1 e Z Q R1 10 Unit mm A A1 A2 max 4.65 0.10 4.65
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DBSMS27P:
OT1154-1
sot1154-1
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SOT263
Abstract: SOT-263 sot263-01 TO-220 JEDEC
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 lead form option SOT263-01 E A A1 P q D1 mounting base D L4 L3 L1 R L L5 m 1 L2 5 e b w M R c Q Q1 Q2 5 10 mm scale DIMENSIONS mm are the original dimensions
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O-220
OT263-01
O-220
SOT263
SOT-263
sot263-01
TO-220 JEDEC
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L3 Package
Abstract: SOT263 TO-220 JEDEC sot263b
Text: PDF: 2001 Jan 11 Philips Semiconductors Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 lead form option SOT263B-01 E p1 A ∅p A1 q D1 mounting base D L3 L1 R L L4 m 1 L2 5 e b R w M c Q Q1 Q2 5 10 mm scale DIMENSIONS mm are the original dimensions
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O-220
OT263B-01
O-220
L3 Package
SOT263
TO-220 JEDEC
sot263b
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Untitled
Abstract: No abstract text available
Text: Package outline DBS27P: plastic DIL-bent-SIL special bent power package; 27 leads (lead length 6.8 mm) SOT827-1 non-concave x Dh D Eh view B: mounting base side A2 d B j E A L4 L3 L 1 L2 27 e1 Z w bp e c Q v e2 m 10 20 mm x scale Z(1) 1.8 0.03 1.2 Dimensions (mm are the original dimensions)
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DBS27P:
OT827-1
sot827-1
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transistor mark l6
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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OCR Scan
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PDF
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KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
KST1623L4
KST1623L5
KST1623L6
KST1623L7
transistor mark l6
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transistor A 564
Abstract: L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t C h a ra cte ristic Sym b o l Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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OCR Scan
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PDF
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KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
KST1623L4
KST1823L5
KST1623L6
KST1623L7
KST1623L3
KST1623L4
KST1623L5
transistor A 564
L6 TRANSISTOR
kst1623
L6 MARKING
transistor L7
transistor marking l6
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MPSA10
Abstract: MPSA10 equivalent transistor
Text: SAMSUNG SEMICONDUCTOR I NC MPSA10 l4 E | 7 «,fcm Ma 0007341, 5 NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emltter Voltage: Veto= 40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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MPSA10
625mW
T-29-21
MPSA10
MPSA10 equivalent
transistor
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S3C marking
Abstract: No abstract text available
Text: P hilips Sem iconductors bbS 3T31 0033540 N APX f lf l4 ANER Product specification PHILIPS/DISCRETE N-channel field-effect transistors PARAMETER • Low leakage level typ. 500 fA SYMBOL • High gain ±VDS drain-source voltage loss drain current • Low cut-off voltage.
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BF556A
BF556B
BF556C
BF556B
23SHt.
bbS3031
S3C marking
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nf029
Abstract: MRA transistor 222280905001 BLV58 016C20 Philips capacitor 013
Text: Philips Sem iconductors b b ä B IB l □ 0 2 cî 0 b l4 157 W A P X Product specification UHF linear push-pull power transistor 'N AMER PHILIPS/DISCRETE BLV58 b^E ]> Q UICK REFERENCE DATA RF performance at Th = 25 °C in a comm on em itter test circuit. FEATURES
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BLV58
BLV58
OT289
PINNING-SOT289
MRA353
nf029
MRA transistor
222280905001
016C20
Philips capacitor 013
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