LED123
Abstract: 57411 LED105 LED126 led114 BSEN61000 IEC-348 4 x 7-segment LED display module LED127 led111
Text: L+ N - AUX UH N L3 l L3 L2 L1 L1 L2 k l k l L L1 K L2 K L L k L3 K N Voltage Current L1 L2 L3 N L1 L2 L3 1ph 1ph 3W 3ph 3W 3ph 4W 3ph 3W BAL 3ph 4W BAL RS485 option Relay option Unused Voltage terminals are internally connected Secondary of CTs must be connected to earth
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RS485
IEC348
/BS4753
IEC688,
BSEN60688,
BS4889,
BSEN61000-6-3
BSEN61000-6-4
BSEN601010
LED123
57411
LED105
LED126
led114
BSEN61000
IEC-348
4 x 7-segment LED display module
LED127
led111
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250945
Abstract: No abstract text available
Text: Intel Itanium® 2 Processor Intel® Itanium® 2 Processor 1.66 GHz with 9 MB L3 Cache Intel® Itanium® 2 Processor 1.66 GHz with 6 MB L3 Cache Intel® Itanium® 2 Processor 1.6 GHz with 9 MB L3 Cache Intel® Itanium® 2 Processor 1.6 GHz with 6 MB L3 Cache
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80543KC
Abstract: 250945 06191
Text: Intel Itanium® 2 Processor Intel® Itanium® 2 Processor 1.60 GHz with 9MB L3 Cache Intel® Itanium® 2 Processor 1.60 GHz with 6MB L3 Cache Intel® Itanium® 2 Processor 1.50 GHz with 6MB L3 Cache Intel® Itanium® 2 Processor 1.50 GHz with 4MB L3 Cache
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SMA MARKING L09
Abstract: a006 ae02 marking b09 0287 D081 TCO marking a004 TB D83 diode A003 ITP700 Intel Itanium
Text: Intel Itanium® 2 Processor Intel® Itanium® 2 Processor 1.66 GHz with 9 MB L3 Cache Intel® Itanium® 2 Processor 1.66 GHz with 6 MB L3 Cache Intel® Itanium® 2 Processor 1.6 GHz with 9 MB L3 Cache Intel® Itanium® 2 Processor 1.6 GHz with 6 MB L3 Cache
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250945
Abstract: intel schematics
Text: Intel Itanium® 2 Processor Datasheet Intel® Itanium® 2 Intel® Itanium® 2 Intel® Itanium® 2 Intel® Itanium® 2 Intel® Itanium® 2 Processor 1.5 GHz with 6M L3 Cache Processor 1.4 GHz with 4M L3 Cache Processor 1.3 GHz with 3M L3 Cache Processor 1.0 GHz with 3M L3 Cache
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IF110
Abstract: smd diode code g6 smd diode g6 3x60-015X2 Control of Starter-generator marking G3 S3 marking DIODE smd diode code g3 smd diode code g4 smd L2 diode
Text: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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GMM3x60-015X2
IF110
ID110
3x60-015X2
3x60-015X2
IF110
smd diode code g6
smd diode g6
Control of Starter-generator
marking G3
S3 marking DIODE
smd diode code g3
smd diode code g4
smd L2 diode
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smd diode g6
Abstract: marking G3 IF110 GMM3x60-015X1
Text: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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GMM3x60-015X1
IF110
ID110
3x60-015X1
3x60-015X1
smd diode g6
marking G3
IF110
GMM3x60-015X1
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Untitled
Abstract: No abstract text available
Text: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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GMM3x60-015X2
IF110
ID110
3x60-015X2
3x60-015X2
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DIODE marking S6 57
Abstract: No abstract text available
Text: MTI 145WX100GD Three phase full Bridge VDSS = 100 V ID25 = 190 A RDSon typ. = 1.7 mW with Trench MOSFETs in DCB-isolated high-current package Part number MTI145WX100GD L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G2 G4 G6 S2 S4 S6 L1- L2- L3+ L3 L3- Features / Advantages:
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145WX100GD
MTI145WX100GD
20140821a
DIODE marking S6 57
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DIODE marking S6 57
Abstract: DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE
Text: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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GMM3x60-015X1
IF110
ID110
3x60-015X1
3x60-015X1
DIODE marking S6 57
DIODE marking S4 57
smd diode code s1 96
GMM3x60-015X1
DIODE marking S6 96
smd diode .S6 22
smd diode S4 96
smd diode g6
Control of Starter-generator
S4 DIODE
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Diode smd s6 95
Abstract: No abstract text available
Text: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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3x100-01X1
3x100-01X1
Diode smd s6 95
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Untitled
Abstract: No abstract text available
Text: GMM 3x100-01X1 VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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3x100-01X1
3x100-01X1
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Untitled
Abstract: No abstract text available
Text: GMM 3x160-0055X2 VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings
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3x160-0055X2
3x160-0055X2
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Untitled
Abstract: No abstract text available
Text: GMM 3x180-004X2 VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Symbol
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3x180-004X2
ID110
IF110
20110307b
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75WX100GD
Abstract: No abstract text available
Text: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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3x100-01X1
3x100-01X1
75WX100GD
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50904
Abstract: No abstract text available
Text: GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Symbol
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3x180-004X2
ID110
IF110
20100713a
50904
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Untitled
Abstract: No abstract text available
Text: GMM 3x160-0055X2 Three phase full Bridge VDSS = 55 V =1 50 A ID25 RDSon typ. = 2.2 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 S4 S6 G2 S2 L1- L3+ L3 L2- L3- Applications Symbol Conditions Maximum Ratings
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3x160-0055X2
3x160-0055X2
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Untitled
Abstract: No abstract text available
Text: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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3x100-01X1
3x100-01X1
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MTI90WX75GD
Abstract: DIODE marking VU smd diode code g6 vu marking code SMD MARKING DIODE VU
Text: GMM 3x120-0075X2 Three phase full Bridge VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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3x120-0075X2
3x120-0075X2
MTI90WX75GD
DIODE marking VU
smd diode code g6
vu marking code
SMD MARKING DIODE VU
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MTI150WX40GD
Abstract: ID110 SMD MARKING g3
Text: GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions
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3x180-004X2
ID110
IF110
lev200
20110307b
MTI150WX40GD
SMD MARKING g3
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Untitled
Abstract: No abstract text available
Text: GMM 3x120-0075X2 VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings
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3x120-0075X2
3x120-0075X2
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SMD mosfet MARKING code TC
Abstract: smd diode g6 SMD MARKING CODE s4 IF110 diode L2 smd smd diode code g3 smd diode code g6 smd diode marking code L2 Control of Starter-generator DIODE marking S6 57
Text: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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GMM3x60-015X2
IF110
ID110
3x60-015X2
3x60-015X2
SMD mosfet MARKING code TC
smd diode g6
SMD MARKING CODE s4
IF110
diode L2 smd
smd diode code g3
smd diode code g6
smd diode marking code L2
Control of Starter-generator
DIODE marking S6 57
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Untitled
Abstract: No abstract text available
Text: GMM3x60-015X2 VDSS = 150 V = 50 A ID25 RDSon typ. = 19 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Preliminary Data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 S4 S6 L1- L2- L3+ L3 L3- Applications MOSFETs Symbol Conditions
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GMM3x60-015X2
ID110
IF110
20120618a
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Untitled
Abstract: No abstract text available
Text: Customer Information Sheet DRAWING No.: SHEET R30-300XX02 2 OF 2 | IF IN DOUBT - ASK | | NOT TO SCALE | THIRD ANGLE PROJECTION ALL ORDER DIMENSIONS IN mm CODE: R 3 0 - 300XX02 PART No. LI L2 L3 PART No. LI L2 PART L3 No. LI L2 L3 LENGTH LI IN m m -
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OCR Scan
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R30-300XX02
300XX02
R30-3000402
R30-3003202
R30-3000602
CuZn39Pb3)
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