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    L2SC3356WT1G

    Abstract: L2SC3356WT1
    Text: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device


    Original     		PDF L2SC3356WT1G L2SC3356WT1 L2SC3356WT3G SC-70 3000/Tape 10000/Tape L2SC3356WT1G

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    Abstract: No abstract text available
    Text: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device


    Original     		PDF L2SC3356WT1G L2SC3356WT1 L2SC3356WT3G SC-70 3000/Tape 10000/Tape

    L2SC3356WT1G

    Abstract: No abstract text available
    Text: DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356WT1G S-L2SC3356WT1G DESCRIPTION The L2SC3356WT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. S- Prefix for Automotive and Other Applications Requiring Unique Site


    Original     		PDF L2SC3356WT1G S-L2SC3356WT1G L2SC3356WT1 AEC-Q101 L2SC3356WT3G S-L2SC3356WT3G SC-70 3000/Tape L2SC3356WT1G