2987
Abstract: IDT6198L IDT6198S IDT79R3000 L282
Text: IDT6198S IDT6198L CMOS STATIC RAM 64K 16K x 4-BIT with Output Control Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.) • Output Enable (OE) pin available for added system flexibility
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IDT6198S
IDT6198L
20/25/35/45/55/70/85ns
15/20/25/35ns
24-pin
28-pin
MIL-STD-883,
IDT6198
536-bit
2987
IDT6198L
IDT6198S
IDT79R3000
L282
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CERAMIC LEADLESS CHIP CARRIER
Abstract: IDT7198L IDT7198S
Text: IDT7198S IDT7198L CMOS STATIC RAMs 64K 16K x 4-BIT Added Chip Select and Output Controls Integrated Device Technology, Inc. nized as 16K x 4. It is fabricated using IDT’s high-performance, high-reliability technology—CMOS. This state-of-theart technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications.
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IDT7198S
IDT7198L
IDT7198
IDT7198S/L
D24-1)
L28-2)
E24-1)
MIL-STD-883,
CERAMIC LEADLESS CHIP CARRIER
IDT7198L
IDT7198S
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L282 ST
Abstract: vk 01 b sot23 L282 ci 7482 TS3431
Text: TS3431 1.24 V programmable shunt voltage reference Datasheet − production data Features • Adjustable output voltage: 1.24 to 24 V ■ Several precision levels @ 25°C ± 2%, ± 1%, ± 0.5% and ± 0.25% ■ Sink current capability: 0.4 to 100 mA ■ Industrial temperature range: - 40°C to +125°C
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TS3431
TL431
OT23-3L
OT23-3
TS3431
L282 ST
vk 01 b
sot23 L282
ci 7482
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y732
Abstract: 74FCT821
Text: IDT54/74FCT821/A/B HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER MILITARY AND COMMERCIAL TEMPERATURE RANGES IDT54/74FCT821A/B HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER FEATURES: DESCRIPTION: • Equivalent to AMD’s Am29821-25 bipolar registers in pinout/
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IDT54/74FCT821/A/B
IDT54/74FCT821A/B
Am29821-25
IDT54/74FCT821A
IDT54/74FCT821B
Am29800
SO24-2)
D24-1)
E24-1)
y732
74FCT821
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AM29800
Abstract: SO24-2 d794
Text: IDT54/74FCT827A/B/C HIGH PERFORMANCE CMOS BUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES HIGH PERFORMANCE CMOS BUFFER IDT54/74FCT827A/B/C FEATURES: DESCRIPTION: − − The IDT54/74FCT800 series is built using an advanced dual metal CMOS technology. −
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IDT54/74FCT827A/B/C
IDT54/74FCT800
Am29827
IDT54/74FCT827A
IDT54/74FCT827B
IDT54/74FCT827C
MIL-STD-883,
SO24-2)
AM29800
SO24-2
d794
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L282 ST
Abstract: ci 7482 sot23 L282 L281 L282-L283 ci 4017 JESD97 L282 TL431 TS3431
Text: TS3431 1.24V programmable shunt voltage reference Features • Adjustable output voltage: 1.24 to 24V ■ Several precision levels @ 25°C ±2%, ±1%, ±0.5% and ±0.25% ■ Sink current capability: 0.4 to 100mA ■ Industrial temperature range: -40°C to +125°C
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PDF
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TS3431
100mA
TL431
OT23-3L
OT23-3
TS3431
L282 ST
ci 7482
sot23 L282
L281
L282-L283
ci 4017
JESD97
L282
TL431
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74FCT821
Abstract: No abstract text available
Text: IDT54/74FCT821A/B/C HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER MILITARY AND COMMERCIAL TEMPERATURE RANGES HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER IDT54/74FCT821A/B/C FEATURES: DESCRIPTION: − The FCT821 series is built using an advanced dual metal CMOS
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IDT54/74FCT821A/B/C
FCT821
74FCT821
10-bit
FCT374
Am29821-25
IL-STD-883,
SO24-2)
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Am29821-25
Abstract: No abstract text available
Text: IDT54/74FCT821A/B/C HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER MILITARY AND COMMERCIAL TEMPERATURE RANGES HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER IDT54/74FCT821A/B/C FEATURES: DESCRIPTION: − The FCT821 series is built using an advanced dual metal CMOS
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IDT54/74FCT821A/B/C
FCT821
74FCT821
10-bit
FCT374
Am29821-25
IL-STD-883,
SO24-2)
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l282
Abstract: L-282
Text: PACKAGE DIAGRAM OUTLINES LEADLESS CHIP CARRIER C o n t i n u e d DCN REV DESCRIPTION 17288 03 UPDATE TO STANDARDIZE DRAWING DATE APPROVAL A A1 NOTES: (UNLES OTHERWISE SPECIFIED; 1. ALL DIMENSIONS ARE IN INCHES. 2. BSC - BASIC LEAD SPACING BETWEEN CENTERS.
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L28-2
l282
L-282
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l282
Abstract: No abstract text available
Text: CMOS STATIC RAM 256K 64K x 4-BIT IDT61298SA Integrated Device Techn olog y, Inc. FEATURES: DESCRIPTION: • 64K x 4 high-speed static RAM • Fast Output Enable (OE) pin available for added system flexibility • High speed (equal access and cycle times)
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IDT61298SA
20/25ns
12/15/17/20ns
28-pin
MIL-STD-883,
IDT61298SA
144-bit
200mV
l282
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 64K 16Kx 4-BIT with Output Control IDT6198S IDT6198L Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.) • Output Enable (OE) pin available for added system flexibility
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IDT6198S
IDT6198L
20/25/35/45/55/70/85ns
15/20/25/35ns
24-pin
28-pin
MIL-STD-883,
IDT6198
536-bit
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7198S
Abstract: 7198L25
Text: CMOS STATIC RAMs 64 K 16Kx 4-BIT IDT7198S IDT7198L Added Chip Select and Output Controls Integrated Device Technology, Inc. FEATURES: _ nized as 16K x 4. It is fabricated using IDT’s high-perfor mance, high-reliability technology— CMOS. This state-of-theart technology, combined with innovative circuit design tech
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IDT7198S
IDT7198L
20/25/35/45/55/70/85ns
24-pin
28-pin
MIL-STD-883,
IDT7198S/L
T7198
L28-2)
7198S
7198L25
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256S IDT71256L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed address/chip select time — Military: 25 /30/3 5/45 /5 5 /7 0 /8 5 /1 0 0 /1 2 0 /1 50ns (max.) — Commercial: 20/25/35/45ns (max.)
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IDT71256S
IDT71256L
20/25/35/45ns
28-pin
28-pin
32-pin
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Untitled
Abstract: No abstract text available
Text: Tem ic HM 65756 MATRA MHS 32 K x 8 High Speed CMOS SRAM Introduction The HM 65756 is a high speed CMOS static RAM organised as 32,768 x 8 bits. It is manufactured using MHS’s high performance CMOS technology. Easy memory expansion is provided by an active low chip
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HM-65756
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IDT71258
Abstract: No abstract text available
Text: CMOS STATIC RAM 256K 64K x 4-BIT ADVANCE INFORMATION IDT71258 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 25/35/45/55ns (max.) — Commercial: 20/25/35/45ns (max.) • Low-power operation
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IDT71258
25/35/45/55ns
20/25/35/45ns
IDT71258S
400mW
IDT712581Active:
350mW
24-pin,
24-pin
28-pin
IDT71258
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2S35
Abstract: R05F
Text: CMOS STATIC RAMS 256K 64K x 4-BIT Separate Data Inputs and Outputs Integrated Device Technology, Inc. ADVANCE INFORMATION IDT71281S/L IDT71282S/L FEATURES: DESCRIPTION: • • • • Th e ID T 7 1 2 8 1 /ID T 7 1 282 are 26 2,144-b it high-speed static
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IDT71281S/L
IDT71282S/L
71281S
71282S
10Ojiw
28-pin
200mV
IDT71282
2S35
R05F
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 64K 64K x 1-BIT IDT7187S IDT7187L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High speed (equal access and cycle time) — Military: 2 0 /2 5 /3 5 /4 5 /5 5 /7 0 /8 5 n s (m ax.) — Com mercial: 15/2 0 /2 5 /3 5 n s (m ax.)
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IDT7187S
IDT7187L
22-pin
24-pin
28-pin
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28 LEADLESS CHIP CARRIER DWG
Abstract: MS-009-AE
Text: PACKAGE DIAGRAM OUTLINES LEADLESS CHIP CARRIER DCN REV DESCRIPTION 17 295 05 UPDATE TO STANDARDIZE DRAWING DATE APPROVAL A E NOTES: 2. E UNLES OTHERWISE SPECIFIED; BSC - BASIC LEAD SPACING BETWEEN CENTERS. DWG # SYMBOL MIN A .060 .075 A1 .050 .065 B1 R9 L 20-1
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L20-1
28 LEADLESS CHIP CARRIER DWG
MS-009-AE
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IDT71256
Abstract: IDT71256L IDT71256S P28-2
Text: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256S IDT71256L In te g ra te d D evice T echnology, Inc. FEATURES: • High-speed address/chip select time — Military: 2 5 /3 0 /3 5 /4 5 /5 5 /7 0 /8 5 /1 0 0 /1 2 0 /1 50ns (max.) — Commercial: 2 0 /25/3 5/45 n s (m ax.)
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IDT71256S
IDT71256L
25/30/35/45/55/70/85/100/120/150ns
20/25/35/45ns
28-pin
28-pin
32-pin
IDT71256
IDT71256L
P28-2
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 64K 64K x 1-BIT IDT7187S IDT7187L Integrated Device T echnology, Inc. FEATURES: DESCRIPTION: • High speed (equal acce ss and cycle tim e) — M ilitary: 20/25/3 5/45 /55/70/8 5ns (m ax.) — C om m ercia l: 15/20/25/35ns (m ax.) • Low po w e r consum ption
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IDT7187S
IDT7187L
15/20/25/35ns
22-pin
24-pin
28-pin
MIL-STD-883,
D22-1)
P22-1)
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256S IDT71256L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed address/chip select time — Military: 2 5 /3 0 /3 5 /4 5 /5 5 /7 0 /8 5 /1 0 0 /1 2 0 /1 50ns (max.) — Com mercial: 2 0 /25/3 5/45 n s (max.)
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IDT71256S
IDT71256L
28-pin
28-pin
32-pin
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAMs 64K 16K x 4-BIT IDT7198S IDT7198L Added Chip Select and Output Controls Integ rated Device T echnology, Inc. FEATURES: _ m ance, h ig h -re lia bility tech nolog y— C M O S . T his state-of-theart technology, com bined w ith innovative circuit design te c h
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IDT7198S
IDT7198L
T7198
D24-1)
P24-1)
L28-2)
E24-1)
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256S IDT71256L Integrated Device Technology, Inc. FEATURES: of-the-art technology, combined with innovative circuit design techniques, provides a cost effective alternative to bipolar and fast N M O S memories. Timing param eters have been speci
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IDT71256S
IDT71256L
MIL-STD-883,
28-pin)
32-pin)
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2S5570
Abstract: No abstract text available
Text: CMOS STATIC RAMs 64K 16Kx 4-BIT IDT71981S/L IDT71982S/L Separate Data Inputs and Outputs Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • Access times as fast as 15ns are available. These circuits also offer a reduced power standby mode (Isb). When CSi or
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IDT71981S/L
IDT71982S/L
IDT71981S/L:
IDT71982S/L:
20/25/35/45/55/70/85ns
15/20/25/35ns
28-pin
MIL-STD-883,
2S5570
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