c3199
Abstract: transistor c3199 C3199 transistor KTC3199GR transistor C3199 GR C3199 gr KTC3199Y C3199 y ktc31 KTC3199 GR
Text: MCC KTC3199 KTC3199-O KTC3199-Y KTC3199-GR KTC3199-BL omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • • High DC Current Gain: hFE=70~700
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KTC3199
KTC3199-O
KTC3199-Y
KTC3199-GR
KTC3199-BL
KTA1267
C3199
O-92S
c3199
transistor c3199
C3199 transistor
KTC3199GR
transistor C3199 GR
C3199 gr
KTC3199Y
C3199 y
ktc31
KTC3199 GR
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c3199
Abstract: transistor C3199 GR KTC3199GR
Text: MCC TM Micro Commercial Components KTC3199-O KTC3199-Y KTC3199-GR KTC3199-BL omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)
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KTC3199-O
KTC3199-Y
KTC3199-GR
KTC3199-BL
KTA1267
C3199
O-92S
c3199
transistor C3199 GR
KTC3199GR
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c3199
Abstract: transistor C3199 GR
Text: MCC TM Micro Commercial Components KTC3199-O KTC3199-Y KTC3199-GR KTC3199-BL omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • x • • • • NPN General Purpose Application
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KTC3199-O
KTC3199-Y
KTC3199-GR
KTC3199-BL
KTA1267
C3199
O-92S
c3199
transistor C3199 GR
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transistor c3199
Abstract: c3199 C3199 transistor transistor C3199 GR KTC3199GR C3199 gr C3199 y KTC3199-BL KTC3199-Y KTC3199-O
Text: MCC TM Micro Commercial Components KTC3199-O KTC3199-Y KTC3199-GR KTC3199-BL omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)
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KTC3199-O
KTC3199-Y
KTC3199-GR
KTC3199-BL
KTA1267
C3199
O-92S
transistor c3199
C3199 transistor
transistor C3199 GR
KTC3199GR
C3199 gr
C3199 y
KTC3199-BL
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C3199
Abstract: transistor c3199 c3199gr KTC3199 GR C3199 transistor C3199 gr C3199 y KTC3199 C3199 equivalent transistor KTC3199
Text: SEMICONDUCTOR KTC3199 MARKING SPECIFICATION TO-92M PACKAGE 1. Marking method Laser Marking 2. Marking C3199 GR 116 No. Item Marking 1 Device Name C3199 KTC3199 2 hFE Grade GR O,Y,GR,BL 3 Lot No. 116 01.09.27 Revision No : 01 Description 1 Year 0 ~ 9 : 2000~2009
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KTC3199
O-92M
C3199
C3199
transistor c3199
c3199gr
KTC3199 GR
C3199 transistor
C3199 gr
C3199 y
KTC3199
C3199 equivalent
transistor KTC3199
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KTC3199 GR
Abstract: KTC3199 transistor KTC3199 ktC3199 transistor ktc3199 y ktc31 npn hfe 120-240
Text: KTC3199 KTC3199 TO-92S TRANSISTOR NPN FEATURES Power dissipation PCM: 1. EMITTER 400 2. COLLECTOR mW (Tamb=25℃) Collector current ICM: 150 mA Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55℃ to +150℃
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KTC3199
O-92S
100mA,
KTC3199 GR
KTC3199
transistor KTC3199
ktC3199 transistor
ktc3199 y
ktc31
npn hfe 120-240
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S KTC3199 TRANSISTOR NPN 1. EMITTER FEATURES z High DC Current Gain z Complementary to KTA1267 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-92S
KTC3199
KTA1267
100mA
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES ϒ⁄Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.), 10dB(Max.). ・Complementary to KTC3199.
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KTA1267
KTC3199.
-100mA,
-10mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S KTA1267 TRANSISTOR PNP 1. EMITTER FEATURES z Excellent hFE Linearity z Complementary to KTC3199 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-92S
KTA1267
KTC3199
-100mA
-10mA
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KTA1267
Abstract: KTC3199 KTA1267 GR
Text: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A Excellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). H M G ᴌComplementary to KTC3199.
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KTA1267
KTC3199.
KTA1267
KTC3199
KTA1267 GR
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KTC3199 GR
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3199 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A ・High DC Current Gain : hFE=70~700. O F ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). H M G ・Low Noise : NF=1dB(Typ.), 10dB(Max.).
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KTC3199
KTA1267.
100mA,
O-92M
KTC3199 GR
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transistor KTC3199
Abstract: KTA1267 KTC3199 transistor KTA1267
Text: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A Excellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.), 10dB(Max.). H M G Complementary to KTC3199.
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KTA1267
KTC3199.
transistor KTC3199
KTA1267
KTC3199
transistor KTA1267
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KTA1267
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A ϒ⁄Excellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.), 10dB(Max.). H M G ・Complementary to KTC3199.
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KTA1267
KTC3199.
-100mA,
-10mA
O-92M
KTA1267
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors KTC3199 TO-92S TRANSISTOR NPN FEATURES Power dissipation PCM: 1. EMITTER 400 2. COLLECTOR mW (Tamb=25℃) Collector current 150 mA ICM: Collector-base voltage 50 V
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O-92S
KTC3199
O-92S
100mA,
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transistor KTC3199
Abstract: KTC3199 GR ktC3199 transistor transistor KTA1267 ktc3199 y GR-200 KTC3199 10KOHM KTA1267
Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 KTC3199 Features • • • • NPN General Purpose Application High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.)
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KTC3199
KTA1267
O-92S
10mAdc)
10Vdc,
10KOHM)
50Vdc
transistor KTC3199
KTC3199 GR
ktC3199 transistor
transistor KTA1267
ktc3199 y
GR-200
KTC3199
10KOHM
KTA1267
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KTC3199 GR
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components KTC3199 Features • • • • High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)
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KTC3199
KTA1267
O-92S
KTC3199 GR
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KTA1267
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# KTA1267 Features • • • Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199
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KTA1267
KTC3199
O-92S
KTA1267
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transistor KTC3199
Abstract: No abstract text available
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# KTA1267 Features • • • Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199
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KTA1267
KTC3199
O-92S
transistor KTC3199
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KTC3199 GR
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# KTC3199 Features • • • • NPN General Purpose Application High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)
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KTC3199
KTA1267
O-92S
100mAdc,
10mAdc)
10Vdc,
10KOHM)
KTC3199 GR
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transistor KTC3199
Abstract: KTC3199 GR ktC3199 transistor KTC3199 GR-200 ktc3199 y
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# KTC3199 Features • • • • NPN General Purpose Application High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)
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KTC3199
KTA1267
O-92S
10Vdc,
10KOHM)
50Vdc
transistor KTC3199
KTC3199 GR
ktC3199 transistor
KTC3199
GR-200
ktc3199 y
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transistor KTC3199
Abstract: KTA1267 KTC3199 ktc3199 y
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3199 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High DC Current Gain : hFE=70~700. • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.).
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KTC3199
KTA1267.
transistor KTC3199
KTA1267
KTC3199
ktc3199 y
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KTC3199
Abstract: KTA1267 ktC3199 transistor
Text: SEMICONDUCTOR TECHNICAL DATA KTC3199 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High DC Current Gain : hFE=70~700. • Excellent I lfe Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=ldB(Typ.), 10dB(Max.).
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KTC3199
KTA1267.
T0-92M
KTC3199
KTA1267
ktC3199 transistor
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTA1267 e p it a x ia l p la n a r pnp t r a n s i s t o r GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES • Excellent h FE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=ldB(Typ.), 10dB(Max.). • Complementary to KTC3199.
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KTA1267
KTC3199.
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ER100
Abstract: No abstract text available
Text: S EM IC O N D U C T O R KTC3199 TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR G E N E R A L PUR PO SE A PPLICATIO N SW ITC H IN G APPLICATIO N. FEA T U RE S • H igh DC C urrent G ain : h FE=70~700. • E xcellent h FE L inearity : h FE 0 .1m A /h FE(2m A )=0.95(T yp.).
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KTC3199
ER100
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