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    KT 829 B Search Results

    KT 829 B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KT829B Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

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    12v to Amplifier 200w circuit diagrams

    Abstract: 200w power amplifier circuit diagram KT 829 b 200w transistor audio amplifier circuit diagram 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM 200w stereo audio Amplifier diagram NE5517 NE5517NG 12v to Amplifier 200w schematic diagrams 200w audio amplifier circuit diagram
    Text: NE5517, NE5517A, AU5517 Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of


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    PDF NE5517, NE5517A, AU5517 AU5517 NE5517 AU5517/NE5517 AU5517/NE5517. NE5517/D 12v to Amplifier 200w circuit diagrams 200w power amplifier circuit diagram KT 829 b 200w transistor audio amplifier circuit diagram 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM 200w stereo audio Amplifier diagram NE5517NG 12v to Amplifier 200w schematic diagrams 200w audio amplifier circuit diagram

    12v to Amplifier 200w circuit diagrams

    Abstract: 12v to Amplifier 200w schematic diagrams 200w transistor audio amplifier circuit diagram 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM NE5517 200w audio amplifier circuit diagram NE5517N NE5517D 200w power amplifier circuit diagram AU5517
    Text: NE5517, NE5517A, AU5517 Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of


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    PDF NE5517, NE5517A, AU5517 AU5517 NE5517 AU5517/NE5517 AU5517/NE5517. NE5517/D 12v to Amplifier 200w circuit diagrams 12v to Amplifier 200w schematic diagrams 200w transistor audio amplifier circuit diagram 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM 200w audio amplifier circuit diagram NE5517N NE5517D 200w power amplifier circuit diagram

    1SMB12AT3

    Abstract: No abstract text available
    Text: 1SMB5.0AT3 Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* http://onsemi.com The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener


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    ABB contactor

    Abstract: sk 825 440 b9 30-10 contactor abb contactor b9 30 10 ABB CONTACTOR EH 370 ABB CONTACTOR EH 250 abb 460-30-11 CONTACTOR b9 30-10 ABB CONTACTOR EH 160 EK 110
    Text: Short Form Catalogue 1SBC100129C0201 Contactors Motor Protection Accessories Short Form Catalogue Contactors Motor Protection Accessories ABB Contactor Universal Range Tailor-made Products for each Application from 6 to 2000 A Contents pages Block Contactors .


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    PDF 1SBC100129C0201 S-721 D-69006 1SBC100122C0201 ABB contactor sk 825 440 b9 30-10 contactor abb contactor b9 30 10 ABB CONTACTOR EH 370 ABB CONTACTOR EH 250 abb 460-30-11 CONTACTOR b9 30-10 ABB CONTACTOR EH 160 EK 110

    diode sy 345

    Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
    Text: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989


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    PDF III/18/379 diode sy 345 diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337

    kt829a

    Abstract: VEB mikroelektronik Datenblattsammlung Halbleiterbauelemente DDR information applikation mikroelektronik B4207D mikroelektronik datenblattsammlung mikroelektronik DDR "halbleiterwerk frankfurt" KT 829 b
    Text: 0=¡rúl[hE=°@Blel- t3nariilK e le k t r o n ik - b a u e t e m e n t e Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elek­ tronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" (LEB


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    KT 829 b

    Abstract: FPD1 808 nm 1000 mw 2 pins KT 829
    Text: T E K T R O N I X INC/ TRI ÛUI NT 2 bE » E3 B*ïDb23.a O O D D S b l 3 Q T R Û O M !L Î G ig a B it L o g ic 16G071 Transimpedance Amplifier 18 dB Gain / 700 MHz Bandwidth FEATURES 1High gain > 18 dB 1Broad Bandwith: DC to 700 MHz typ. >Low noise: 3 pA//Hz typ. for 16G071-30L1


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    PDF 16G071 16G071-30L1 16G071 050P3 0080TOP KT 829 b FPD1 808 nm 1000 mw 2 pins KT 829

    244pn

    Abstract: kt 807 KT 829 KT 829 b
    Text: 6 VERWENDET NUMMER 829 WAR FÜR 4 5 MR ÄNDERUNGEN 3 4 3 N ISCHEN D IE 3 DEM TECH­ FO R TS CH R ITT BEHALTEN WIR UNS 2 D IEN EN , C AD -O R IG IN A L ZEICHNUNG Z EICH NU NG @ N IC H T ÄNDERN GESCHÜTZT COPYRIGH T A MP D E U T S C H L A N D VOR ALLE RECHTE


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    Untitled

    Abstract: No abstract text available
    Text: i 4 N IG H T VERM A55TE KANTEN SIND NIGHT M A05TA B LIC H A ND ERU NG EN NI5CHEN BEHALTEN LD D IE DEM UN5 i 2 Z E I CHNUNG TECH- F0RT5CHRITT WIR 3 G E S C HU T Z T CJCOPVRIGHT D I ENEN, AMP VOR ALLE DEUTSCHLAND RECHTE DURCH RE V . 1988 GMBH V0RBEHALTEN DATUM


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    PDF A55TE A05TA AMP-EN-554 G02U5I DEPT5200 AH5200 1C829265 MA55TAB

    Untitled

    Abstract: No abstract text available
    Text: • 4bflfci22fci 0 0 0 1 3 5 5 424 IGBT Modules IIX Y High Short Circuit SOA Capability *C6S Type 0 Ts = 25°c : Ts 65°C A VII 50-12G1 * VII 75-12G1 * 1200 VII 50-12S1 VII 75-12S1 1200 ^on ^att max. typ. ! typ. I 125’C 125°C V i mj mj IhJS max. max.


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    PDF 4bflfci22fci 50-12G1 75-12G1 50-12S1 75-12S1 VII100-12G2 VII150-12G2 100-12S2 VII150-12S2 75-12G*

    Untitled

    Abstract: No abstract text available
    Text: MbfibEEb □□□Ifiâl bô4 • IXY nixYS ^C65 VCES VII150-12S2 VCE sat IGBT Modules = 150 A = 1200 V = 3.7 V High Short Circuit SOA Capability L~ 8 0 9 11 & 6 10 Symbol Test Conditions v CES T, = 25'C to 150'C 1200 V Vco, Tj = 25'C to 150"C; RGE = 1 M fl


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    PDF VII150-12S2 4bflb22b DD016S4 VII150-12S2

    Untitled

    Abstract: No abstract text available
    Text: R E V IS IO N K UNLESS OTHERWISE NOTED DIMENSIONS ARE IN INCHES NOTES: 1. 2. 3. 4. 5. 6. 7. HEIGHT VARIATION BETWEEN ANY TWO PINS SHALL BE .0 0 5 [ .1 3 ] MAX. MAXIMUM PIN ROTATION IN BODY: 2 \ TAILS TO BE SHEARED TO ACHIEVE DIMENSIONAL CALLOUTS. MINIMUM PUSHOUT FORCE: 3 lbs.


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    PDF E130i CDA7025

    varistor mdc z301

    Abstract: varistor mdc z151 Varistor MDC Z321 mdc z151 mdc z301 MDC Z131 MDC Z131 20 UL mdc z271 varistor NS 332 Varistor MDC Z681
    Text: Maida Development Company 20 Libby Street • P.O. Box 3529 • Hampton, Virginia 23663 Telephone 757 723-0785 • FAX (757) 722-1194 www: maida.com • e-mail: [email protected] Large Metal Oxide Surge Absorbers with Tab Leads Series: D78 (32mm), D75 (40mm), D77 (53mm)


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    PDF largeRA310 D7577 D7577Z V131RA310 D7577Z0V141RA33Û D7577Z0V151RA360 D7577Z0V181RA390 D7577Z0V231RA460 D7577Z0V251RA490 D7577Z0V271RA550 varistor mdc z301 varistor mdc z151 Varistor MDC Z321 mdc z151 mdc z301 MDC Z131 MDC Z131 20 UL mdc z271 varistor NS 332 Varistor MDC Z681

    kt 829A

    Abstract: a/transistor d829
    Text: ANALOG DEVICES F EA T U R ES High Speed 120 M Hz Bandw idth, G ain = -1 230 V/ jis S lew Rate 90 ns Settling Tim e to 0.1% Ideal for V id eo A pp lications 0.02% Differential Gain 0.04° Differential Phase Low N oise_ 1.7 nV/VHz Input V oltage N oise 1.5 pA/VHz Input Current N oise


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    PDF EIA-481A 20-Lead E-20A) kt 829A a/transistor d829

    12P05

    Abstract: DIN 46 244 8-829532-2 8829 KT 829 b
    Text: 6 NUM M ER 829 532 5 4 3 ÄNDERUNGEN C A D - O R IG IN A L Z E IC H N U N G N IC H T 2 ÄNDERN N IS C H E N BEHALTEN D IE DEM E 0 R T 5 C H R IT T W IR UNS Z EIC H N U N G TECH­ GESCHÜTZT C C 0 P Y R IG H T D IE N E N , AMR VOR ALLE REV. DURCH ÄNDERUNG


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    PDF 4APR99 GB5200 12P05 DIN 46 244 8-829532-2 8829 KT 829 b

    Untitled

    Abstract: No abstract text available
    Text: KOT Ü 1* High Speed, Low Noise Video Op Amp AD829 ANALOG ► DEVICES CONNECTION DIAGRAM FEATURES High Speed 120 MHz Bandwidth, Gain = - 1 230 V /jis Slew Rate 90 ns Settling Time to 0.1% Ideal for Video Applications 0.02% Differential Gain 0.04° Differential Phase


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    PDF AD829 EIA-481A -4550L2

    2T6551

    Abstract: information applikation information applikation mikroelektronik mikroelektronik Heft KD 605 KT825 transistoren KT 960 A Mikroelektronik Information Applikation KT827 mikroelektronik DDR
    Text: im S l^ is B le l- c t s n o r iil- c Information Informations- und Applikationshefte „ M IK R O E L E K T R O N IK " Bisher ersch ien en : Heft Heft Heft Heft Heft Heft Heft 1: 2: 3: 4: 5: 6: 7: A 210 und 211 A 301 A 290 A 202 A 244 und A281 Importbauelem ente RGW „IS"


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    UEI 20 SP 010

    Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
    Text: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"


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    PDF 64-KBit-Sehreib--Iese-Speicher 086/11/B9 UEI 20 SP 010 Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D

    AOTF

    Abstract: U.FLJ
    Text: in \ <N Ui Ü 0, 3 NUMMJK B 2B 62 9 VERW EN D ET F O R *SOE«UMOC« OLE 'Jfc.'l »BCHNI3CHCN fO R T 3 C K * m MtKEM, 9 ÍH U .T (N Win uns VW» . WA« NR. « 0 r; *L1E*A1 IONS CONCCftSÜN« TECH N . CAC-OA10tN*L K im w c sesm O t j t OUf>C* (§Jcop» t*tr <wa


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    PDF CAC-OA10tN q-0-20f» AOTF U.FLJ

    Untitled

    Abstract: No abstract text available
    Text: AN2441S A N 2 4 4 1 S S E C A M * 7 - * X > D - y @ H Video Camera SECAM Color Encoder Circuit •m 9 AN2441S ±, ' i t z ' m ■ 4# ■ m m x - t , at • 5.0V • i m S E C A M fH iy 3 > iÄ lfJ n * 7 - «¡ISIjjil: 'v 4-SECAM¿ A 7 n F eatu res • 5. 0V supply voltage operation


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    PDF AN2441S AN2441S( 121/B 0068/xF 282fH-f 282fn

    KT 829 b

    Abstract: AN2441 AN2441S
    Text: AN2441S A N 2441S er* s e c a m Ä 7 —* x > □ —y m s s Video Camera SECAM Color Encoder Circuit • m m A N 2441S ±, i ^ - Unit : mm SECAM f U h ' y 3 > i Ä f l n ^ 7 —p n 2Œ3 3=1 n c x -iii-% M < k v m . a a n m i i Q i m i t , f m ^ i s j n r n t t t t


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    PDF AN2441S AN2441S( ZZ320 28-Lead SO-28D) 282fH 282fH- 282fn KT 829 b AN2441 AN2441S

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES □ High Speed, Low Noise Video Op Amp AD829 FEATURES High Speed 120 MHz Bandwidth, Gain = - 1 230 V/fis Slew Rate 90 ns Settling Time to 0.1% Ideal for Video Applications 0.02% Differential Gain 0.04° Differential Phase Low Noise 2 n V /V fiz Input Voltage Noise


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    PDF AD829 AD829

    Untitled

    Abstract: No abstract text available
    Text: 8. ELECTRI CAL S P E C I F I C A T I O N S Thermal In condition terms assumed. worst of tem perature Forced condition. A bsolute air This characteristics, of least may d e p e n d Ma x i mu m R a t i n g s Parameter at forced 1.5m /s on is air cooling required


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    Untitled

    Abstract: No abstract text available
    Text: GEC PLESSEY S I: M I (> IN D i; ( I ( K MA6561 High Speed 8 Bit Flash Analog-to-Digital Converter s (Preliminary Data) C11200FDS Issue 1.1 December 1990 Features Pin Out (Figure 1) • CMOS Silicon-on-Sapphire (LSB) DO [ 7 D1 C Z D2 E • 50MHz sample rate


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    PDF MA6561 C11200FDS 50MHz 74AC86 AMA6561 74AC574 AMA6561