TB400
Abstract: GR-1089-CORE TB0640M TB0720M TB0900M TB1100M TB1300M TB4000M
Text: LITE-ON SEMICONDUCTOR TB0640M thru TB4000M Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 360 Volts - 80 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 80A @10/1000us or 250A
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Original
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PDF
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TB0640M
TB4000M
10/1000us
8/20us
29-April-2003,
KSWB06
TB400
GR-1089-CORE
TB0720M
TB0900M
TB1100M
TB1300M
TB4000M
|
GR-1089-CORE
Abstract: TB0640M TB0720M TB0900M TB1100M TB1300M TB3500M
Text: LITE-ON SEMICONDUCTOR TB0640M thru TB3500M Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 50 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 50A @10/1000us or 250A
|
Original
|
PDF
|
TB0640M
TB3500M
10/1000us
8/20us
09-Oct-2001,
KSWB06
GR-1089-CORE
TB0720M
TB0900M
TB1100M
TB1300M
TB3500M
|
GR-1089-CORE
Abstract: TB0640M TB0720M TB0900M TB1100M TB1300M TB4000M
Text: LITE-ON SEMICONDUCTOR TB0640M thru TB4000M Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 360 Volts - 80 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 80A @10/1000us or 250A
|
Original
|
PDF
|
TB0640M
TB4000M
10/1000us
8/20us
GR-1089-CORE
TB0720M
TB0900M
TB1100M
TB1300M
TB4000M
|
TB400
Abstract: GR-1089-CORE TB0640M TB0720M TB0900M TB1100M TB1300M TB4000M
Text: LITE-ON SEMICONDUCTOR TB0640M thru TB4000M Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE VDRM IPP - 58 to 360 Volts - 80 Amperes FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 80A @10/1000us or 250A
|
Original
|
PDF
|
TB0640M
TB4000M
10/1000us
8/20us
TB400
GR-1089-CORE
TB0720M
TB0900M
TB1100M
TB1300M
TB4000M
|
Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR TB0640M thru TB3500M Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 50 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 50A @10/1000us or 250A
|
Original
|
PDF
|
TB0640M
TB3500M
10/1000us
8/20us
07-May-2001,
KSWB06
|