KSR1102
Abstract: KSR2102
Text: KSR1102 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =10KΩ, R2=100KΩ) • Complement to KSR2102 ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
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KSR1102
OT-23
KSR2102
KSR1102
KSR2102
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KSR1102
Abstract: KSR2102
Text: KSR2102 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to KSR1102 ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
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KSR2102
OT-23
KSR1102
KSR1102
KSR2102
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KSR1102
Abstract: No abstract text available
Text: KSR1102 KSR1102 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =10KΩ, R2=10KΩ) • Complement to KSR2102 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit
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KSR1102
KSR2102
OT-23
KSR1102
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KSR1102
Abstract: KSR2102
Text: KSR1102 KSR1102 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =10KΩ, R2=10KΩ) • Complement to KSR2102 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit
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KSR1102
KSR2102
OT-23
KSR1102
KSR2102
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KSR1102
Abstract: KSR2102
Text: KSR1102 KSR1102 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =10KΩ, R2=10KΩ) • Complement to KSR2102 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit
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KSR1102
KSR2102
OT-23
150lopment.
KSR1102
KSR2102
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KSR1102
Abstract: KSR2102
Text: KSR2102 KSR2102 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to KSR1102 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit
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KSR2102
KSR1102
OT-23
KSR1102
KSR2102
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KSR1102
Abstract: KSR2102
Text: KSR2102 KSR2102 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to KSR1102 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit
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KSR2102
KSR1102
OT-23
KSR1102
KSR2102
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Untitled
Abstract: No abstract text available
Text: KSR2102 KSR2102 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to KSR1102 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit
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KSR2102
KSR1102
OT-23
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Untitled
Abstract: No abstract text available
Text: KSR1102 KSR1102 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =10KΩ, R2=10KΩ) • Complement to KSR2102 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit
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KSR1102
KSR2102
OT-23
OT-23
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KSR2102-MTF
Abstract: No abstract text available
Text: KSR2102 KSR2102 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to KSR1102 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit
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KSR2102
KSR1102
OT-23
OT-23
KSR2102-MTF
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BA41-00727A
Abstract: LE88CLGM 82801 hbm IDTCV179 20D2G q231 samsung lcd tv power supply schematic NH82801HEM NB8M-SE RB1 Wlan Cardbus
Text: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D TORINO 2 g n l u a s i t m
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965GM
BA41-00727A
TP17351
7SZ08
TP16469
TP16470
LTST-C193TBKT-AC
A3212ELH/HED55XXU12
MT539
TP16471
LE88CLGM
82801 hbm
IDTCV179
20D2G
q231
samsung lcd tv power supply schematic
NH82801HEM
NB8M-SE
RB1 Wlan Cardbus
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LTN150XG-L05
Abstract: ZD600 c828* npn W316 bag c836 BA59-01664A 1608 F 100nF cpu fan sepa LTN150XG R756
Text: Main System Option SESC code Location 0902-001841 1105-001609 3903-000055 BA31-00025A BA31-00026A BA39-00527A BA39-00528A BA39-00533A BA39-00540A BA41-00568A BA41-00569A BA42-00161A BA42-00162A BA43-00155A BA44-00132A BA44-00162A BA44-00205A BA44-00209A BA44-00211A
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BA31-00025A
BA31-00026A
BA39-00527A
BA39-00528A
BA39-00533A
BA39-00540A
BA41-00568A
BA41-00569A
BA42-00161A
BA42-00162A
LTN150XG-L05
ZD600
c828* npn
W316
bag c836
BA59-01664A
1608 F 100nF
cpu fan sepa
LTN150XG
R756
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DIODE 22B4
Abstract: BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4
Text: X10 DRAW Model Name PBA Name PCB Code Dev. Step Revision APPROVAL AQUILA MAIN BA92-01774A BA41-#####A SR 1.0 CHECK : : : : : CPU :P4-BANIAS Chip Set :MCH-M ODEM Remarks :TEMP AQUILA 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams
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BA92-01774A
BA41-#
400MHZ
512MBYTE
66MHZ
MAP31
68ohm
3000mA
012ohm
DIODE 22B4
BA4602
ba41-00316a
AR5212
MAP17-232
Q506
nvidia 7100
AR5211
27b1 diode
geforce4
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AR5212
Abstract: ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516
Text: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X05 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 40(Operation Block Diagram)
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ISL6225VCC
AR5212
ar5312
diode 39b2
AR5112 AR5213
AR5211
st c739
FD507
U508-3
AR533
Ct516
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ST T4 D560
Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom
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YONAH667
Sheet18.
Sheet19.
Sheet20
Sheet24.
Sheet25
Sheet29.
Sheet30
Sheet32.
Sheet33.
ST T4 D560
ST D560 T4
ST 1803 DHI
B-566
u574
j5512
46d1
BA09-00009A
SAMSUNG GDDR3
54B4
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Untitled
Abstract: No abstract text available
Text: KSR1102 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In S w itch in g C ircu it, Inverter, Interface c ircu it Driver circu it SOT-23 Bu ilt in b ia s R e s is to r (R,= 10KÍ), R ¡= 1 0 K fl) C o m p le m e n t to K SR2102
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KSR1102
OT-23
SR2102
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Untitled
Abstract: No abstract text available
Text: KSR1102 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SO T-23 • Sw itching circu it, Inverter, Interface circu it, D river C ircu it • B uilt in b ias R esisto r (R , «10kfl, R^IOkQ) • Com plem ent to KSR 2102 ABSOLUTE MAXIMUM RATINGS (TA-25X;)
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KSR1102
10kfl,
lc-100
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KSR1102
Abstract: KSR2102 transistor marking w0
Text: S A M S U N G SEMICONDUCTOR IN C¡7 3 5 .1 1 1 4 E O KSR1102 | 7^4145 0 0 0 7 0 4 1 5 J| NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching Circuit, inverter, Interface circuit Driver circuit SOT-23 • Built in bias Resistor (R,=10Kfl, R2=10KQ)
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KSR1102
10Kil,
KSR2102
soT-23
KSR2102
transistor marking w0
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Untitled
Abstract: No abstract text available
Text: KSR1102 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In S O T -2 3 • S w itc h in g c irc u it, In v e rte r, In te rfa c e c irc u it, D riv e r C irc u it • B u ilt in b ia s R e s is to r (R i = 1 0 K £ Ì, R 2 =100K £ì)
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KSR1102
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Untitled
Abstract: No abstract text available
Text: KSR2102 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, interface circuit Driver circuit • Built in bias Resistor (R,=10KQ, R2=10KQ) • Complement to KSR1102 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSR2102
KSR1102
GG24S7S
G054T7b
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10k VR
Abstract: KSR1102 KSR2102 8J marking
Text: KSR1102 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In S O T-23 • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R i =10K£1, R2=100K£1) • C om plem ent to KSR2102 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
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KSR1102
KSR2102
OT-23
30D500
10k VR
KSR1102
KSR2102
8J marking
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KSR2102
Abstract: No abstract text available
Text: KSR2102 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R, = 10KSÎ, R, = 10KS7) • Complement to KSR1102 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSR2102
OT-23
10KS7)
KSR1102
KSR2102
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Untitled
Abstract: No abstract text available
Text: KSR2102 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R ^ IO K iî, R2=10Ki2) • Complement to KSR1102 ABSOLUTE MAXIMUM RATINGS (T a=25°C)
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KSR2102
10Ki2)
KSR1102
OT-23
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B-429 transistor
Abstract: No abstract text available
Text: KSR2102 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SO T-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (Ri “ 1<M, R2=10kß) • Com plem ent to KSR1102 ABSOLUTE MAXIMUM RATINGS (TA=25t)
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KSR2102
KSR1102
-10mA,
-100M
-10mA
B-429 transistor
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