Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MOC8020/D SEMICONDUCTOR TECHNICAL DATA ® TO VDE UL CSA SETI SEM KO DEM KO NEM KO BABT G l o b a l O p t o i s o la t o r MOC8020 MOC8021 [C TR = 500% Min] 6-Pin DIP Optoisolators Darlington Output No Base Connection
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MOC8020/D
MOC8020
MOC8021
MOC8021
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MOC8100/D SEMICONDUCTOR TECHNICAL DATA TO VDE UL ® & CSA SETI SEM KO DEM KO NEM KO BABT MOC8100 G l o b a l O p t o i s o la t o r 6-Pin DIP Optoisolator Transistor Output [C TR = 50% Min] The MOC8IOO device consists of a gallium arsenide infrared emitting diode
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MOC8100/D
MOC8100
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M OC8080/D SEMICONDUCTOR TECHNICAL DATA T VDE O UL @ 1 CSA SETI SEM KO ® DEM KO NEM KO BABT MOC8O8O G l o b a l O p t o i s o la t o r 6 -P in DIP Optoisolator [C TR = 500% Min] Darlington Output M otorola Preferred Device
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OC8080/D
MOC8080/D
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H11LI
Abstract: 730c-04 11L2
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA & <D ® BS SEM KO NEM KO BAST TO <a ® VOE UL CSA sen DEM KO H11L1* [IF on = 1.6 m A Max] H11L2 6-Pin DIP Optoisolators Logic Output (IF(on) = 10 m A Max] *Motorola Preferred Device ST Y L E 5 P LA ST IC The H11L1 and H 1 1L2 have a gallium arsenide IR E D optically coupled to a high-speed
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H11L1*
H11L1
H11LI
730c-04
11L2
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H11AV3A
Abstract: H11AV1A H11AVI H11AV1 H11AV2 H11AV3 H11AV2A
Text: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA & TO VDE UL CSA SETI SEM KO <§> B S DEM KO N EM KO BAB T H11AV1,A* H11AV2,A H11AV3,A [CTR = 1 0 0 % Min 6-Pin D IP O ptoisolators Transistor Output [C TR * 5 0 % Min] [CTR = 2 0 % Min] T he H11AV1.A, H 11A V 2.A and H 11A V 3.A devices consist of a gallium arsenide infrared
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H11AV1
H11AV2
H11AV3
H11AV1,
H11AVI
H11AV2,
H11AV2A,
H11AV3,
H11AV3A
H11AV3A
H11AV1A
H11AV2A
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PDF
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opto transistor moc
Abstract: TL7500
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA GlobalOptoisolator VDE ® ® ® TO f t UL CSA SET! SEMKO DEM KO NEM KO BABT MOC8100 6-Pin D IP Optoisolator Transistor Output [CTR — 5 0 % Min] The MOC 8 IOO device consists of a gallium arsenide infrared emitting diode
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MOC8100
C8100
opto transistor moc
TL7500
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PDF
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TCM78808
Abstract: DC349 tw 2866
Text: TCM79808 OCTAL ASYNCHRONOUS RECEIVERITRANSMITTER D 2 9 4 1 , APRIL 1 9 8 6 - REVISED JU LY 1 9 9 0 Eight Independent Full-Duplex Serial Data Lines FN, HA. OR HB PACKAGE ITOP VIEW —LID UP FOR HA OR HB * m lifi nr in <o ko KO <o r- |i Programmable Baud Rates Individually
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TCM79808
TCM78808
DC349
tw 2866
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by H11AV1/D SEMICONDUCTOR TECHNICAL DATA ® TO VDE UL CSA SE TI SEM KO DEM KO NEMKO BABT H11AV1,A* H11AV2,A [C TR = 100% Min] G lo b a l O p to iso la t o r 6-Pin DIP Optoisolators Transistor Output [C TR = 50% Min] ’ M otorola Preferred Devices
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H11AV1/D
H11AV1
H11AV2
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PDF
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4n33
Abstract: No abstract text available
Text: M O T O R O L A SC D I O D E S / O P T O t,3 b ? 2 5 5 b4E » N0 T7 OüflbfciEID MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO <R VDE UL sen C SA BS ® ® SEM K O DEM KO NEM KO BABT 6-Pin D IP O p to iso la to rs D arlin g to n O u tp u t 4N29 4N29A 4N30*
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4N29/A,
4N32/A
00flbb23
4N29A,
4N32A,
4n33
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PDF
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Untitled
Abstract: No abstract text available
Text: Ja 100mA 664d 90 80 7o V/ 9 V/ » T \/ V T wÁ ^7 60 c '/ / VW SO \7 Hl y kO fw r¡ < n _ 30 < NY i SO 40 30 äO 10 — IQ 10 &
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4N29 MOTOROLA
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by 4N29/D SEMICONDUCTOR TECHNICAL DATA & TO VDE UL ® CSA SE TI SEM KO DEM KO NEMKO BABT G lo b a lO p to iso la to r 6-P in DIP Optoisolators Darlington Output 4N 29 4N 29A 4N 30* [C TR = 100% Min] 4N31 4N 32* T he 4N 29 /A , 4N 30, 4 N 3 1 , 4 N 3 2 1 and 4 N 3 3 (1) d e vice s co n sist o f a gallium
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4N29/D
4N29 MOTOROLA
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diode marking code TYW
Abstract: TOKO LC Filter marking 3df s 45
Text: iS«TO KO TK651xx STEP-UP VOLTAGE CONVERTER WITH VOLTAGE MONITOR FEATURES APPLICATIONS • Guaranteed 0.9 V Operation ■ Battery Powered Systems ■ Very Low Quiescent Current ■ Cellular Telephones ■ Internal Bandgap Reference ■ Pagers ■ High Efficiency MOS Switching
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TK651xx
TK651xx
TK651
-TK651
diode marking code TYW
TOKO LC Filter marking
3df s 45
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PDF
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marking code FA sot25
Abstract: regulator 712 L0u A
Text: r&îTO KO TK712XX LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Low Dropout Voltage ■ Battery Powered Systems ■ Low Quiescent Current ■ Portable Consumer Equipment ■ Very Stable Output ■ Cordless Telephones ■ Low Noise 35 |iVrms ■ Personal Communications Equipment
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OT-25)
TK712XX
TK712xx
OT-25
marking code FA sot25
regulator 712
L0u A
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PDF
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10W25
Abstract: 8640BN 8640CN 8650b J333 K 85500 preset resistor 10k 8640AN 8650C 8650D
Text: SEI KO / EP SO N AMER-, CMPNT 33fc,m34 OO OOSOl b7b S7E D • EPS ' : PROGRAMMABLE TYPE CRYSTAL OSCILLATOR , SPG series • Capable of selecting 57 varieties of frequency output >Use of C-MOS 1C enables low current consumption »Easy-to-mount DIP16PIN type
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DIP16PIN
8640AN
8640BN
8640CN
8650B
8650C
8650D
8650E
8651B
8651E
10W25
J333
K 85500
preset resistor 10k
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PDF
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"MARKING TE" US6
Abstract: No abstract text available
Text: TO SHIBA RN1901 ~RN1906 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1901, RN1902, RN1903, RN1904, RN1905, RN1906 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 2 .1± 0.1 A N D DRIVER CIRCUIT APPLICATIONS. 1.25 ±0.1. TYPE No. RI (kfì) R2 (kO)
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RN1901
RN1906
RN1901,
RN1902,
RN1903,
RN1904,
RN1905,
RN2901
RN2906
"MARKING TE" US6
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PDF
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C4064
Abstract: lexia D64100 SNO 2005 LX 527
Text: # # iE v £ SYM. S -N o . : 025071 ^ * ZONE n $ ?EfT#7F i REVISIONS REV. NO 1G. DATE REV. BY ED024883 2005'03'03 grHSSÌT /ISSUE OF NEW DWG. 2005. B ti NTF. NO. 13 ^ É S tfìfe kO u fiin è Dimensions Cathode (Cathode Mark) (Polarity Mark) ^Recommended Pad
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ED024883
ED024883)
UG1114C-0005-TR
D07N2)
C4064
lexia
D64100
SNO 2005
LX 527
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PDF
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4N35 circuits
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO a VDE UL CSA SETI ® ® SEMKO DEMKO ® BS NEM KO BABT 6-Pin DIP Optoisolators Transistor Output 4N 35* 4N36 4N37 CTR a 100% Min 'Motorola Preferred Device STYLE 1 PLASTIC The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared em itting diode
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PDF
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EIAJ C-3
Abstract: No abstract text available
Text: TO KO Inc TK716xx Production Standard Note TK716xxSCLH Table of Contents 1 . S tru c tu re /F e a tu re 2 . Electrical C haracteristics Specification 3 . Pin layout 4 . Test Circuit 5 . Block Diagram 6 . Definition of Terms 7. 8. 9. 1 0. 1 1. In p u t O utput Capacitor
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TK716xx
TK716xxSCLH
DB4-L005
EIAJ C-3
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PDF
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON *> 7 £ Ö KO D [^ ll[Lli g¥(S(SMlD(g@ TDA8133 5.1V +8V REGULATOR WITH DISABLE AND RESET ADVANCE DATA • OUTPUT CURRENTS UP TO 0.75A ■ FIXED PRECISION OUTPUT 1 VOLTAGE 5.1V ± 2% ■ FIXED PRECISION OUTPUT 2 VOLTAGE 8V±2% ■ OUTPUT 1 WITH RESET FACILITY
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TDA8133
TDA8133
DD7S373
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PDF
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Untitled
Abstract: No abstract text available
Text: r r u i m LT1304/LT1304-3.3/LTl 304-5 i TECHNOLOGY Micropower DC/DC Converters with Low-Battery Detector Active in Shutdown KO TUIKS DCSCRICTIOn • 5V at 200mA from Two Cells ■ 10nA Quiescent Current in Shutdown ■ Operates with % as Low as 1,5V ■ Low-Battery Detector Active in Shutdown
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LT1304/LT1304-3
200mA
370mV
120jiA
300kHz
LT1304-3
LT1304-5
LT1239
LT1301
V/12V
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PDF
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is489
Abstract: No abstract text available
Text: IS 4 a9 Low Voftage Operating Type High Sensitivity OPTC Light Detector IS489 kO u tlin e D im en sio ns • F e a tu re s U n it: mm 1. Low voltage operating type (Vee : 1.4 to 7.0V) 2. High sensitivity type (E vhl ; TYP. 5 Ix) m tem ai connection diagram
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IS489
is489
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PDF
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240x64 toshiba
Abstract: fecg24064 NT7086 T6963C FECG24064B-FLYYBW-55TN 1403 sgs marking codes LCD CHARACTER CODE FECG24064B Marking code mps
Text: & V FORDATA FOR DATA DISPLAY UKAS SGS M A NAG EM ENT SYSTEM S 005 cjt& SSC c 7 * 0 KO U L2>S S P E C IF IC A T IO N GRAPHIC T Y P E DOT M ATRIX LCD MODULE ITEM NUMBER: ESTABLISHED DATE: INITIAL ISSUED DATE: DATASHEET VERSION: ISSUED BY: FECG 24064B-FLYYBW -55TN
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FECG24064B-FLYYBW-55TN
2007-SEP.
FECG24064B-FLYYBW-55TN
240x64 toshiba
fecg24064
NT7086
T6963C
1403
sgs marking codes
LCD CHARACTER CODE
FECG24064B
Marking code mps
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PDF
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04n25
Abstract: 4n272
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO VDE Ul cal ® C SA SETI SEMK0 D EM KO BS 4N 25* 4N25A * 4N 26* 4N27 4N28 BABT NEMKO 6-Pin DIP Optoisolators Transistor Output CTR = 20% Min] The 4N25/A, 4 N 2 6 ,4 N 2 7 and 4N28 devices consist of a gallium arsenide infrared
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4N25/A,
4N25A
30A-04
4N25A,
04n25
4n272
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PDF
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16 bit multiplier
Abstract: No abstract text available
Text: i ß '-!Pr ^ ¡O - L1010 HIGH SPEED 16 X 16-BIT CMOS MULTIPLIER/ACCUMULATOR ¡ o £ u i '& H L . p ^ :X ' , ' T kO A ‘ ex. ' ce FUNCTIONAL BLOCK DIAGRAM FEATURES ^ 1 6 x 1 6 M ULTIPLIER/ACCUMULATOR WITH X TC 2 r o RND DOUBLE PRECISION PRODUCT HIGH SPEED M ULTIPLY — ACCUMULATE
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L1010
16-BIT
35-BIT
1010J,
16 bit multiplier
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PDF
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