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    M5M23160

    Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
    Text: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1


    Original     		PDF 16-Meg MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 M5M23160 TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 KMM5361000A/AG Q014Sh4 SfiS « S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit


    OCR Scan     		PDF KMM5361000A/AG Q014Sh4 361000A bitsX36 20-pin 72-pin 361000A- 130ns

    KMM5361000/A

    Abstract: No abstract text available
    Text: SAMSUNG E LECTRONI CS INC b4E T> • TTbMlMS G 01 4 57 5 KMM5361OOOA1/A1G DhD DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES The Samsung KMM5361000A1 is a 1M bits x 36 Dynamic RAM high density memory module. The Samsung KMM5361000A1 consist of eight CMOS 1M x4 bit


    OCR Scan     		PDF KMM5361OOOA1/A1G KMM5361000A1 20-pin 72-pin KMM5361000A1-7 130ns M5361OOOA1 150ns KMM5361000/A

    TIC 1160

    Abstract: No abstract text available
    Text: KMM5361000A1/A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000A1 is a 1M bits x 36 Dynamic RAM high d e nsity m em ory m odule. The Sam sung KMM5361000A1 co n sist o f eig h t CMOS 1 M x 4 bit


    OCR Scan     		PDF KMM5361000A1/A1G 5361000A1 M5361OOOA1 KMM5361000A1-10 100ns 130ns 150ns 180ns KMM5361000A1 TIC 1160

    KMM5361000A

    Abstract: No abstract text available
    Text: KMM5361000A ORAM MODULES 1M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5361000A is a 1M bitsX 36 Dynamic RAM high density memory module. The Samsung KMM5361000A consist of eight CMOS 1MX4 bit DRAMs in 20-pin SOJ package and four CMOS 1MX 1


    OCR Scan     		PDF KMM5361000A KMM5361000A- KMM5361000A- 130ns 150ns 180ns KMM5361000A-10 KMM5361000A 20-pin

    KMM536100

    Abstract: KMM5361000A7
    Text: KMM5361000A/AG DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit DRAMs in 20-pin SOJ package and four CMOS 1 M X 1


    OCR Scan     		PDF KMM5361000A/AG 361000A bitsX36 20-pin 22fjF KMM5361OOOA 361000A- 10OOA- KMM536100 KMM5361000A7

    KMM5361000

    Abstract: "soj 26" dram 80 ns G392
    Text: KMM536100QA/AG/A1 /A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361 OOOA is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KMM5361 OOOA consist of eight CMOS 1MX4 bit


    OCR Scan     		PDF KMM536100QA/AG/A1 KMM5361 bitsX36 20-pin 72-pin KMM5361000 "soj 26" dram 80 ns G392

    KM41C4000AJ

    Abstract: KM44C1000AZ "30 pin simm" KM41C4000Z KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble
    Text: FUNCTION GUIDE 2. Product Guide 2.1 Dynamic RAM Generation 1st Gen. 2nd Gen. 3rd Gen. Part Number Organization Speed ns Technology Feature Package Remark KM41C4000J KM41C4000Z KM 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 4M x1 4M x1


    OCR Scan     		PDF KM41C4000J KM41C4000Z 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 KM44C1OOOJ KM44C1000Z KM41C4000AJ KM44C1000AZ "30 pin simm" KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble

    Untitled

    Abstract: No abstract text available
    Text: KMM536100QA/AG/A1 /A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung K M M 5 3 6 1 0 0 0 A is a 1M b its X 3 6 Dynamic RAM high density m em ory module. The Samsung K M M 5 3 6 1 0 0 0 A con sist o f eight C M OS 1 M X 4 bit


    OCR Scan     		PDF KMM536100QA/AG/A1 20-pin 72-pin 361000A- M5361000A/A1: KMM5361000 111il 111111h

    KM424C256Z

    Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100


    OCR Scan     		PDF KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ

    KMM591000AN

    Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC


    OCR Scan     		PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble

    KMM591000AN8

    Abstract: KMM591000AN KMM591000AN-7 AG10 KMM591000AN10 kmm5322000av KMM591000 A1G10 KMM5362000A KMM584000A
    Text: FUNCTION GUIDE 1. Introduction 1.1 Dynamic RAM di SAMSUNG Electronics 11 FUNCTION GUIDE ’ New Product eg SAMSUNG Electronics 12 FUNCTION GUIDE 1.2 Dynamic RAM Module CMOS T- 1M x8 - KMM58100QAN-7 KMM58100QAN-8 KMM581000AN-10 KMM591000AN-7 KMM591000AN-8 KMM591000AN-10


    OCR Scan     		PDF KMM58100QAN-7 KMM58100QAN-8 KMM581000AN-10 KMM591000AN-7 KMM591000AN-8 KMM591000AN-10 KMM584000A-7 KMM584000A-8 KMM584000A-10 KMM594000A-7 KMM591000AN8 KMM591000AN KMM591000AN-7 AG10 KMM591000AN10 kmm5322000av KMM591000 A1G10 KMM5362000A KMM584000A

    AG10

    Abstract: km416c256 1m maskrom KM68B1002-10
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM sg SA M SU N G Electronics 11 MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 — KM41C4000ASL-7 — KM41C4000ASL-8 - KM41C4000ASL-10


    OCR Scan     		PDF KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7 KM41C4000ASL-8 KM41C4000ASL-10 KM41C4001A-7 AG10 km416c256 1m maskrom KM68B1002-10