KMM366S104CTL Search Results

KMM366S104CTL Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
KMM366S104CTL-G0		Samsung Electronics	1M x 64 SDRAM DIMM based on 1M x 16, 4K Refresh, 3.3V Synchronous DRAM with SPD		Original	PDF

KMM366S104CTL Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
KMM366S104CTL-G0 Abstract: No abstract text available Text: KMM366S104CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) :±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.	Original	PDF	KMM366S104CTL 200mV. 2K/32ms 4K/64ms. KMM366S104CTL 1Mx64 1Mx16, 66MHz KMM366S104CTL-G0
KMM366S104CTL-G0 Abstract: No abstract text available Text: KMM366S104CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.	Original	PDF	KMM366S104CTL 200mV. 2K/32ms 4K/64ms. KMM366S104CTL 1Mx64 1Mx16, 100Max 54Max) KMM366S104CTL-G0
KMM366S104CT-G8 Abstract: KMM366S104CT-GH KMM366S104CT-GL Text: KMM366S104CT Preliminary PC100 SDRAM MODULE Revision History Revision .2 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV.	Original	PDF	KMM366S104CT PC100 2K/32ms 4K/64ms. KMM366S104CT 1Mx64 1Mx16, 100Max KMM366S104CT-G8 KMM366S104CT-GH KMM366S104CT-GL
Untitled Abstract: No abstract text available Text: KMM366S104CTL PC66 SDRAM MODULE KMM366S104CTL SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S104CTL is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung	OCR Scan	PDF	KMM366S104CTL KMM366S104CTL 1Mx64 1Mx16 400mil 166-pin 168-pin
Untitled Abstract: No abstract text available Text: KMM366S104CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : +5uA to ± 1 .5uA.	OCR Scan	PDF	KMM366S104CTL 200mV. 2K/32ms 4K/64ms. KMM366S104CTL 1Mx64 1Mx16, 54Max)
Untitled Abstract: No abstract text available Text: KMM366S104CTL PC66 SDR AM M O D U L E Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : -Input leakage currents (Inputs) : ±5uA to ±1 uA. -Input leakage currents (I/O) : ±5uA to ±1.5uA.	OCR Scan	PDF	KMM366S104CTL 200mV. 2K/32ms 4K/64ms. KMM366S1 04CTL 1Mx64 1Mx16,
Untitled Abstract: No abstract text available Text: Preliminary PC100 SDRAM MODULE KMM366S104CT Revision History Revision .2 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. In(lnputs) : ± 5uA to ±1uA , - Cin to be measured at V dd I il (DQ) : ± 5uA to ± 1.5uA. = 3.3V, T a = 23°C, f = 1MHz, V	OCR Scan	PDF	PC100 KMM366S104CT 2K/32ms 4K/64ms. KMM366S104CT 1Mx64 1Mx16,
KMM366S424BTL-G0 Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT Text: TABLE OF CONTENTS \| I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .	OCR Scan	PDF	KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT