Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM366F160 8 0BK3 Revision History Version 0.0(Nov. 1997) • Changed PCB for signal integrity. • Changed Module Part No. from KMM366F160(8)0BK to KMM366F160(8)0BK3 caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM366F160(8)0BK3
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KMM366F160
16Mx4,
16Mx64bits
16Mx4bits
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM366F160 8 0CK2 KMM366F160(8)0CK2 EDO Mode without buffer 16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F160(8)0CK2 is a 16Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F160(8)0CK2 consists of sixteen CMOS 16Mx4bits
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KMM366F160
16Mx4,
16Mx64bits
16Mx4bits
400mil
168-pin
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TAA 151
Abstract: No abstract text available
Text: DRAM MODULE KMM366F160 8 0BK2 KMM366F160(8)0BK2 EDO Mode without buffer 16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F160(8)0BK2 is a 16Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F160(8)0BK2 consists of sixteen CMOS 16Mx4bits
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KMM366F160
16Mx4,
16Mx64bits
16Mx4bits
400mil
168-pin
TAA 151
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M366F160 8 0BJ2-C Unbuffered 16Mx64 DIMM (16Mx4 base) Revision 0.1 June 1998 DRAM MODULE M366F160(8)0BJ2-C M366F160(8)0BJ2-C EDO Mode without buffer 16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F160(8)0BJ2-C is a 16Mx64bits Dynamic
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M366F160
16Mx64
16Mx4
16Mx4,
16Mx64bits
KMM366F160
16Mx4bits
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Untitled
Abstract: No abstract text available
Text: K M M 3 6 6 F 1 60 8 0B K3 DRAM MODULE 16Mx64 Unbuffered DIMM (16Mx4 base) Revision 0.0 Nov. 1997 -1 Rev. 0.0 (Nov. 1997) - K M M 3 6 6 F 1 60( 8) 0B K3 DRAM MODULE Revision History Version 0.0(Nov. 1997) • Changed PCB for signal integrity. • Changed Module Part No. from KMM366F160(8)0BK to KMM366F160(8)0BK3 caused by PCB revision .
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16Mx64
16Mx4
KMM366F160
16Mx4,
16Mx64bits
KMM366F1
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DDS-30
Abstract: No abstract text available
Text: KMM366F1680AK KMM366F1600AK DRAM MODULE KMM366F1680AK & KMM366F1600AK EDO Mode without buffer 16Mx64 DRAM DIMM based on 16Mx4, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F168 0 0AK is a 16M bit x 64 Dynamic RAM high density memory module. The
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KMM366F1680AK
KMM366F1600AK
KMM366F1600AK
16Mx64
16Mx4,
KMM366F168
16Mx4bit
400mil
DDS-30
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KM44V16104BK
Abstract: No abstract text available
Text: DRAM MODULE KMM366F160 8 0BK2 KMM366F160(8)0BK2 EDO Mode without buffer 16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F160(8)0BK2 is a 16Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F160(8)0BK2 consists of sixteen CMOS 16Mx4bits
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KMM366F160
16Mx4,
16Mx64bits
16Mx4bits
400mil
168-pin
KM44V16104BK
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44v16104
Abstract: No abstract text available
Text: KMM366F1680AK KMM366F1600AK DRAM MODULE KMM366F1680AK & KMM366F1600AK EDO Mode without buffer 16Mx64 DRAM DIMM based on 16Mx4, 8K & 4K Refresh, 3.3V G ENER AL DESCRIPTIO N FEATURES The Samsung KMM366F168 0 0AK is a 16M bit x 64 Dynamic RAM high density memory module. The
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KMM366F1680AK
KMM366F1600AK
KMM366F1680AK
KMM366F1600AK
16Mx64
16Mx4,
KMM366F168
16Mx4bit
400mil
44v16104
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1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
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KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
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KMM366F213BK6
Abstract: KMM364E124BJ6 KMM366F213BK-6 KMM374F410BK6 83AK KMM366F410BK6 KMM374F400BK6 KMM366F400BK6 124BT-L7 KMM364C12
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line Memory Module SIMM l-l. Fast Page ( FP ) Mode ;16MBased 2Mx36 4Mx32 4Mx3fi 8Mx32 8Mx3C 64MBased>- KMM5321200BW/BWG-6.Tf KMM5321200BW/BWGKMM5361203BW/BWG-6 KMM5361203BW/BWG-7 KMM5322200BW/BWG-6 KMM5322200BW/BWG-7
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2Mx36
4Mx32
8Mx32
KMM374F4l
KMM374F410BK-6
8Mx64
MM366F883AK-5_
KMM366F883AK-6
KMM366F803AK-5
KMM374F
KMM366F213BK6
KMM364E124BJ6
KMM366F213BK-6
KMM374F410BK6
83AK
KMM366F410BK6
KMM374F400BK6
KMM366F400BK6
124BT-L7
KMM364C12
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1MX16
Abstract: KMM5324104BK KMM5321200B
Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE DRAM Module Org. Part No. Feature 4 Byte Single In-Line Memory Module 5 V 1Mx32 1Mx36 2Mx32 4Mx36 8Mx32 8Mx36 1— -— — r ÍF P .S G , PPD 1Mx16, SOJ 60/70 750 1024/16 r ~ m o w KMM5321200BW/BWG
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1Mx32
KMM5321200AW/AWG
KMM5321200BW/BWG
KMM5321204AW/AWG
KMM5321204BW/BWG
1Mx36
M15361203A
1Mx16,
1Mx16
16Mx4,
1MX16
KMM5324104BK
KMM5321200B
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KMM364C12
Abstract: KMM53616000AK KMM5322100BK 2MX32 1MX16
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Intro d u ctio n . DRAM Module- 13 13 DRAM for
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