Untitled
Abstract: No abstract text available
Text: InGaAs area image sensor G11097-0606S Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging The G11097-0606S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an
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Original
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PDF
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G11097-0606S
G11097-0606S
KMIR1016E03
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G11097-0606S
Abstract: package TO8-16
Text: InGaAs area image sensor G11097-0606S Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging The G11097-0606S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an
|
Original
|
PDF
|
G11097-0606S
G11097-0606S
KMIR1016E03
package TO8-16
|
Untitled
Abstract: No abstract text available
Text: InGaAs area image sensor G11097-0606S Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging The G11097-0606S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an
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Original
|
PDF
|
G11097-0606S
G11097-0606S
SE-171
KMIR1016E03
|