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    C4125

    Abstract: single gate "Shottky" Schottky Diode 40V 6A
    Text: SEMICONDUCTOR KMB6D0NS30QA TECHNICAL DATA N-Ch MOSFET+SBD GENERAL DESCRIPTION This trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. The MOSFET and Schottky diode are isolated inside the


    Original     		PDF KMB6D0NS30QA 100ms 100us Fig10. C4125 single gate "Shottky" Schottky Diode 40V 6A

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KMB6D0NS30QA TECHNICAL DATA N-Ch MOSFET+SBD GENERAL DESCRIPTION This trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. The MOSFET and Schottky diode are isolated inside the


    Original     		PDF KMB6D0NS30QA

    DS24V

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR KMB6D0NS30QA TECHNI CAL DATA N-Ch M O SF E T +SB D G E N E R A L D E S C R IP T IO N This trench MOSFET has better characteristics, such as fast switching tim e, low on re sista n c e , low g ate c h arg e and e x c e lle n t a v a la n ch e


    OCR Scan     		PDF KMB6D0NS30QA 20NS30QA S30QA DS24V