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    KM68V1002AT Search Results

    KM68V1002AT Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM68V1002AT-12 Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM Original PDF
    KM68V1002AT-12 Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM Scan PDF
    KM68V1002AT-15 Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM Original PDF
    KM68V1002AT-15 Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM Scan PDF
    KM68V1002AT-17 Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM Scan PDF
    KM68V1002AT-20 Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM Original PDF
    KM68V1002AT-20 Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM Scan PDF

    KM68V1002AT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256

    um61256ak-15

    Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
    Text: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7


    Original     		PDF AT93C46-10PC AT93C46-10PC-2 AT93C46-10SC AT93C46-10SC-2 AT93C46R-10SC AT93C46R-10SC-2 AT93C46W-10SC AT93C46W-10SC-2 AT93C56-10PC AT93C56-10PC-2 um61256ak-15 w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257

    philips diode PH 33J

    Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
    Text: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without


    Original     		PDF 10-BIT QS3L384) QS3L2384 QS3L384 QS3L2384 philips diode PH 33J UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY

    KM68V1002A

    Abstract: 300mil-SOJ
    Text: PRELIMINARY KM68V1002A, KM68V1002AI CMOS SRAM Document Title 128Kx8 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target.


    Original     		PDF KM68V1002A, KM68V1002AI 128Kx8 32-TSOP2-400F 002MIN KM68V1002A 300mil-SOJ

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


    Original     		PDF C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12

    UM61256FK-15

    Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
    Text: QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX QS3257 QS32257 FEATURES/BENEFITS DESCRIPTION • • • • • • • • The QS3257 is a high-speed CMOS LVTTL-compatible Quad 2:1 multiplexer/demultiplexer. The QS3257 is a function and pinout compatible QuickSwitch


    Original     		PDF 74F257, 74FCT257, 74FCT257T QS32257 QS3257 QS32257 UM61256FK-15 YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624

    KM68V1002A

    Abstract: No abstract text available
    Text: PRELIMINARY KM68V1002A, KM68V1002AI CMOS SRAM Document Title 128Kx8 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target.


    Original     		PDF KM68V1002A, KM68V1002AI 128Kx8 32-TSOP2-400F 047MAX KM68V1002A

    KM68V1002A

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION KM68V1002A CMOS SRAM 131,072 WORDx8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17,20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM68V1002A-12 : 95mA (max.)


    OCR Scan     		PDF KM68V1002A KM68V1002A-12 KM68V1002A-15 KM68V1002A-17 KM68V1002A-20 KM681V002AJ 32-SOJ-400 KM68V1002AT 32-TSOP -400F KM68V1002A

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION KM68V1002A CMOS SRAM 131,072 WORDx8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 2 ,1 5 ,1 7 ,20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.)


    OCR Scan     		PDF KM68V1002A KM68V1002A-12 KM68V1002A-15: KM68V1002A-17 KM68V1002A-20: KM681V002AJ 32-SOJ-400 KM68V1002AT 32-TSOP -400F

    Untitled

    Abstract: No abstract text available
    Text: KM68V1002A CMOS SRAM 1 2 8 K x 8 B it High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 m A (M ax) Operating KM68V1002A-12 : 170 mA


    OCR Scan     		PDF KM68V1002A KM68V1002A 576-bit 68V1002A 32-pin

    Untitled

    Abstract: No abstract text available
    Text: KM68V1002A/AL CMOS S RAM ELECTRONICS 1 2 8 K x 8 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS): 5mA(Max.) 0.5mA(Max.) ; L-veronly


    OCR Scan     		PDF KM68V1002A/AL KM68V1002A/AL-12 KM68V1002A/AL-15 KM68V1002A/AL-17 KM68V1002A/AL-20 KM68V1002AJ/ALJ 32-SOJ-4Ã KM68V1002AT/ALT004 32-TSO P2-400F

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM KM68V1002A 1 2 8 K x 8 B it High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION »Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM68V1002A-12 : 170 mA (Max.)


    OCR Scan     		PDF KM68V1002A KM68V1002A-12 KM68V1002A-15 KM68V1002A-17 KM68V1002A-20 KM68V1002AJ 32-SOJ-400 KM68V1002AT 32-TSOP2-4QOF KM68V1002A

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION CMOS SRAM KM68V1002A 131,072 W0RDx8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION The KM68V1002A is a 1,048,576-bit high speed Static Random Access Memory organized as 131,072 words by 8 bits. The KM68V1002A uses eight common input and


    OCR Scan     		PDF KM68V1002A KM68V1002A-12: KM68V1002A-15 KM68V1002A-17 KM68V1002A-20 KM681V002AJ 32-SOJ-400 KM68V1002AT 32-TSOP -400F

    Untitled

    Abstract: No abstract text available
    Text: KM68V1002A, KM68V1002AI CMOS SRAM 128Kx 8 Bit High-Speed CMOS Static RAM 3.3V Operating} FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15, 20ns(Max. • Low Power Dissipation Standby f m . ) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating KM68V1002A - 1 2 : 140mA(Max.)


    OCR Scan     		PDF KM68V1002A, KM68V1002AI 128Kx KM68V1002A 140mA 135mA 130mA KM68V1002AJ