Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KM684000LI Search Results

    KM684000LI Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM684000LI Samsung Electronics 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM Scan PDF
    KM684000LI-10 Samsung Electronics 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM Scan PDF
    KM684000LI-10L Samsung Electronics 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM Scan PDF
    KM684000LI-7 Samsung Electronics 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM Scan PDF
    KM684000LI-7L Samsung Electronics 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM Scan PDF
    KM684000LI-8 Samsung Electronics 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM Scan PDF
    KM684000LI-8L Samsung Electronics 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM Scan PDF

    KM684000LI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KM684000LI/LI-L CMOS SRAM 524,288K WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70,85,100ns Max. • Low Power Dissipation Standby (CMOS) : 11mW(Typ-) 1.1/iW(Typ.) L-Version 275« WfTyp.) LL-Version Operating


    OCR Scan
    PDF KM684000LI/LI-L 100ns KM684000LGI/LGI-L 32-SOP-525 KM684000LTI/LTI-L 32-TSOP2-400F KM684000LRI/LRI-L 32-TSQP2-400R KM684000 304-bit

    Untitled

    Abstract: No abstract text available
    Text: KM684000LI / Ll-L CMOS SRAM 512Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial tem perature operating : - 40°C ~ 85°C • Fast Access Time : 70,100ns Max. • Low power dissipation - Standby(CMOS) : 550uW (Max.) L Version


    OCR Scan
    PDF KM684000LI 512Kx8 100ns 550uW 385mW KM684000LGI/LGI-L: 525mll) 684000LTI/LTI-L 400mil) KM684000LRI/LRI-L:

    Untitled

    Abstract: No abstract text available
    Text: KM684000LI/LI-L CMOS SRAM 524,288K WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70,85,100ns Max. • Low Power Dissipation Standby (CMOS) :11mWfTyp.) 1.1,«W(Typ.) L-Version 275,uW(Typ.) LL-Version Operating


    OCR Scan
    PDF KM684000LI/LI 100ns 11mWfTyp. 275ftWfTyp. KM684000LGI/LGI-L KM684000LTI/LTI-L KM684000LRI/LRI-L 32-SOP-525 32-TSOP2-400F 32-TSOP2-400R

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan
    PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL