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    Samsung Semiconductor KM684000LP-5

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    KM684000L Datasheets (66)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM684000L Samsung Electronics 512K x 8 BIT HIGH HIGH SPEED CMOS STATIC RAM Scan PDF
    KM684000LG Samsung Electronics 512K x 8 BIT HIGH HIGH SPEED CMOS STATIC RAM Scan PDF
    KM684000LG-10 Samsung Electronics 512K x 8 bit CMOS static RAM, 100ns Scan PDF
    KM684000LG-10L Samsung Electronics 512K x 8 bit CMOS static RAM, 100ns, low power Scan PDF
    KM684000LG-5 Samsung Electronics 512K x 8 bit CMOS static RAM, 55ns Scan PDF
    KM684000LG-5L Samsung Electronics 512K x 8 bit CMOS static RAM, 55ns, low power Scan PDF
    KM684000LG-7 Samsung Electronics 512K x 8 bit CMOS static RAM, 70ns Scan PDF
    KM684000LG-7L Samsung Electronics 512K x 8 bit CMOS static RAM, 70ns, low power Scan PDF
    KM684000LG-8 Samsung Electronics 512K x 8 bit CMOS static RAM, 85ns Scan PDF
    KM684000LG-8L Samsung Electronics 512K x 8 bit CMOS static RAM, 85ns, low power Scan PDF
    KM684000LGI-10 Samsung Electronics 512K x 8 bit CMOS static RAM, 100ns Scan PDF
    KM684000LGI-10L Samsung Electronics 512K x 8 bit CMOS static RAM, 100ns, low power Scan PDF
    KM684000LGI-7 Samsung Electronics 512K x 8 bit CMOS static RAM, 70ns Scan PDF
    KM684000LGI-7L Samsung Electronics 512K x 8 bit CMOS static RAM, 70ns, low power Scan PDF
    KM684000LGI-8 Samsung Electronics 512K x 8 bit CMOS static RAM, 85ns Scan PDF
    KM684000LGI-8L Samsung Electronics 512K x 8 bit CMOS static RAM, 85ns, low power Scan PDF
    KM684000LG-L Samsung Electronics 512K x 8 BIT HIGH HIGH SPEED CMOS STATIC RAM Scan PDF
    KM684000LI Samsung Electronics 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM Scan PDF
    KM684000LI-10 Samsung Electronics 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM Scan PDF
    KM684000LI-10L Samsung Electronics 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM Scan PDF

    KM684000L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM684000L/KM684000L-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns Max. • Low Power Dissipation Standby (CMOS): 10/iW (Typ.) L Version 5 fiW (Typ.) L-L Version Operating: 110mW/MHz (Max.)


    OCR Scan     		PDF KM684000L/KM684000L-L 100ns 10/iW 110mW/MHz KM684000LP/LP-L: 32-pin 600mil) KM684000LG/LG-L: 525mil)

    Untitled

    Abstract: No abstract text available
    Text: KM684000L/KM684000L-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns Max. • Low Power Dissipation Standby (CMOS): 10/iW (Typ.) L Version 5fiW (Typ.) L-L Version Operating: 110mW/MHz (Max.)


    OCR Scan     		PDF KM684000L/KM684000L-L 100ns 10/iW 110mW/MHz KM684000LP/LP-L: 32-pin 600mil) KM684000LG/LG-L: 525mil)

    Untitled

    Abstract: No abstract text available
    Text: KM684000LI/LI-L CMOS SRAM 524,288K WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70,85,100ns Max. • Low Power Dissipation Standby (CMOS) : 11mW(Typ-) 1.1/iW(Typ.) L-Version 275« WfTyp.) LL-Version Operating


    OCR Scan     		PDF KM684000LI/LI-L 100ns KM684000LGI/LGI-L 32-SOP-525 KM684000LTI/LTI-L 32-TSOP2-400F KM684000LRI/LRI-L 32-TSQP2-400R KM684000 304-bit

    pin diagram of ttl 74112

    Abstract: pin diagram of 74112 ttl 74112 CI 74112 L0821 L0619 bm42
    Text: SAMSUNG ELECTRONICS INC b?E » 7 c1 b M m 2 KM684000L/KM684000L-L 00175m MSI SriGK CMOS SRAM 524,288 WORD X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 55, 70, 85, 100ns Max. • Low P ow er D issipa tion Standby (CMOS): 1(VW (Typ.) L Version


    OCR Scan     		PDF KM684000L/KM684000L-L 00175m 100ns 110mW/MHz KM684000LP/LP-L: 32-pin 600mil) KM684000LG/LG-L: 525mil) pin diagram of ttl 74112 pin diagram of 74112 ttl 74112 CI 74112 L0821 L0619 bm42

    Untitled

    Abstract: No abstract text available
    Text: KM684000LI / Ll-L CMOS SRAM 512Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial tem perature operating : - 40°C ~ 85°C • Fast Access Time : 70,100ns Max. • Low power dissipation - Standby(CMOS) : 550uW (Max.) L Version


    OCR Scan     		PDF KM684000LI 512Kx8 100ns 550uW 385mW KM684000LGI/LGI-L: 525mll) 684000LTI/LTI-L 400mil) KM684000LRI/LRI-L:

    Untitled

    Abstract: No abstract text available
    Text: KM684000LI/LI-L CMOS SRAM 524,288K WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70,85,100ns Max. • Low Power Dissipation Standby (CMOS) :11mWfTyp.) 1.1,«W(Typ.) L-Version 275,uW(Typ.) LL-Version Operating


    OCR Scan     		PDF KM684000LI/LI 100ns 11mWfTyp. 275ftWfTyp. KM684000LGI/LGI-L KM684000LTI/LTI-L KM684000LRI/LRI-L 32-SOP-525 32-TSOP2-400F 32-TSOP2-400R

    PWM+IC+8+PIN+DIP+3423

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION KM684000L/KM684000L-L CMOS SRAM 51 2 K X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85,100 ns max. • Low Power Dissipation Standby (CMOS): 10MW (typ.) Operating : 75mW/MHz (typ.) • Single 5 V ± 10% Power Supply


    OCR Scan     		PDF KM684000L/KM684000L-L 75mW/MHz 600mil) 525mil) 400mil) 684000L/L-L 684000Lble PWM+IC+8+PIN+DIP+3423

    KM684000L

    Abstract: ha1723
    Text: CMOS SRAM KM684000L / L-L 5 12Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns Max. • Low power dissipation - Standby(CMOS) : 550^W (M ax.) L Version :11 0|iW (M ax.) L-L Version - Operating : 385mW /MHz(Max.)


    OCR Scan     		PDF KM684000L 512Kx8 550nW 385mW/MHz KM684000LP/LP-L 600mil) KM684000LG/LG-L 525mil) KM684000LT/LT-L 400mil) ha1723

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000

    Untitled

    Abstract: No abstract text available
    Text: KM684000L-L CMOS SRAM 524,288 WORD X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns Max. • Low Power Dissipation Standby (CMOS): 10(iW (Typ.) L Version 5/iW ITyp.) L-L Version Operating: 110mW /MHz (Max.)


    OCR Scan     		PDF KM684000UKM684000L-L 100ns 110mW KM6B4000LP/LP-L: 32-pin 600mil) KM684000LG/LG-L: 525mil) KM684000LT/LT-L:

    TC551001a

    Abstract: CXK584000 Fujitsu FLL 100 SRM2264 cxk58527 uPD434000 lh5168 km6264 M5M51008 SRM20256
    Text: 8K X 8 HYUNDAI MITSUBISHI MOSEL S-MOS SAMSUNG SHARP SONY TOSHIBA 32K X HY6264A M5M5165P MS6264 SRM2264 KM6264 LH5168 CXK5864B TC5565 70/85/100/120 70/100/120/150 70/100 100/120 70/100/120 80/100 70/100 100/120/150 P-## P-## L-##PC LC-## A-##P -##L P-## ALP-##


    OCR Scan     		PDF HY6264A M5M5165P MS6264 SRM2264 KM6264 LH5168 CXK5864B TC5565 HY62256A MB84256A TC551001a CXK584000 Fujitsu FLL 100 cxk58527 uPD434000 M5M51008 SRM20256

    KM6264BL-10

    Abstract: samsung CMOS SRAM KMM591000 KM75C01 KM75C01AP80 KM75C03AJ-50 KM6264BL7 KM75C01AP-20 KM75C01AP-25 KM75C01AP-80
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAIM »¡SAMSUNG Electronics 11 MEMORY ICs »SElectronics SAMSUNG FUNCTION GUIDE MEMORY ICS sgSAMSUNG Electronics FUNCTION GUIDE 13 MEMORY ICs FUNCTION GUIDE *: N ew Product f: P relim inary P roduct f t : U nder D evelopm ent


    OCR Scan     		PDF KMM591000C-6 KMM591000C-7 KMM591000C-8 KMM536256C/CG-7 KMM536256C/CG-8 New80 KM75C03AP-50 KM75C03AN-12 KM75C03AN-15 KM75C03AN-20 KM6264BL-10 samsung CMOS SRAM KMM591000 KM75C01 KM75C01AP80 KM75C03AJ-50 KM6264BL7 KM75C01AP-20 KM75C01AP-25 KM75C01AP-80

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    KM68512

    Abstract: 12BKX8 km6865b
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs


    OCR Scan     		PDF 010/J/T KM68512 12BKX8 km6865b

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E » • 7 ^ 4 1 4 2 0017514 4SI ■ KM684000L-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns Max. • Low Power Dissipation Standby (CMOS): 10/xW (Typ.) L Version


    OCR Scan     		PDF KM684000UKM684000L-L 100ns 10/xW 110mW KM684000LP/LP-L: 32-pin 600mil) KM684000LG/LGL: 525mil)

    Untitled

    Abstract: No abstract text available
    Text: S A M S UN G E L E C T R O N I C S INC b7E » • 7*ib414E D 0 1 7 5 2 3 KM68V4000ÜL-L 434 H S H 6 K CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 8 5 ,1 0 0 ,120ns (Max.) • Low Power Dissipation


    OCR Scan     		PDF ib414E KM68V4000Ã 120ns KM6SV4000LP 600mil) KM68V4000LG 525mil) KM68V4G00LT 400mil) KM68V4000LR

    KM416C256-7

    Abstract: KM6264BL-10 KM416C256-10 KM75C01AP80 KM62256BL-10 KM75C02AJ-20 KM75C01AP-35 KM41C4000A KM68512L-7/7L
    Text: MEMORY ICS 1. INTRODUCTION 1.1 Dynamic RAM iS SAM SUNG FUNCTION GUIDE MEMORY ICs — FUNCTION GUIDE 4M bit 4M X 1 KM41C4000A-7 - — KM41C4000AL-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7- KM41C4000ASL-8— KM41C4000ASL-10


    OCR Scan     		PDF KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7----- KM41C4000ASL-8-- KM41C4000ASL-10 KM41C4001A-7 KM416C256-7 KM6264BL-10 KM416C256-10 KM75C01AP80 KM62256BL-10 KM75C02AJ-20 KM75C01AP-35 KM41C4000A KM68512L-7/7L

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258


    OCR Scan     		PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference

    Untitled

    Abstract: No abstract text available
    Text: KM684000/L/L-L CMOS SRAM 524, 288 WORD X 8 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 55, 70, 8 5 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 2.57mW(Max) 550juW(Max.) L-Version 110/*W(Max.) L-L-Verslon Operating


    OCR Scan     		PDF KM684000/L/L-L 100ns 550juW 385mW 684000LP/LP-L 32-DIP-600 KM684000G/LG/LG-L 32-SOP-525 KM684000T/LT/LT-L 32-TSOP2-400F

    AG10

    Abstract: km416c256 1m maskrom KM68B1002-10
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM sg SA M SU N G Electronics 11 MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 — KM41C4000ASL-7 — KM41C4000ASL-8 - KM41C4000ASL-10


    OCR Scan     		PDF KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7 KM41C4000ASL-8 KM41C4000ASL-10 KM41C4001A-7 AG10 km416c256 1m maskrom KM68B1002-10