KM616V1002BT Search Results

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Samsung Semiconductor KM616V1002BT-8
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KM616V1002BT Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
KM616V1002BT-10		Samsung Electronics	64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)		Original	PDF
KM616V1002BT-12		Samsung Electronics	64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)		Original	PDF
KM616V1002BT-8		Samsung Electronics	64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)		Original	PDF
KM616V1002BTI-10		Samsung Electronics	64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)		Original	PDF
KM616V1002BTI-12		Samsung Electronics	64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)		Original	PDF
KM616V1002BTI-8		Samsung Electronics	64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)		Original	PDF

KM616V1002BT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PD7720 Abstract: uPD7720 TMS320S30 18672 DSP96002 1553B MCM6323ATS10 NM6403 TMS320C10 TMS320C30 Text: РАДИОЛОКАЦИЯ С.Миронов, В.Дударев, А.Богатов Серьезную научно техническую проблему представ ляет разработка теоретической базы и методов по	Original	PDF	NM6403) TMS320S30, NM6404, NM1281, PD7720 uPD7720 TMS320S30 18672 DSP96002 1553B MCM6323ATS10 NM6403 TMS320C10 TMS320C30
KM616V1002B Abstract: No abstract text available Text: PRELIMINARY KM616V1002B/BL, KM616V1002BI/BLI Preliminary PRELIMINARY CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History	Original	PDF	KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 44-TSOP2-400F KM616V1002B
K7A803609B-PC25 Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20 Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15	Original	PDF	K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
mn4117405 Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51 Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE	Original	PDF	CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
KM616V1002B Abstract: No abstract text available Text: PRELIMINARY KM616V1002B/BL, KM616V1002BI/BLI Preliminary PRELIMINARY CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History	Original	PDF	KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 44-TSOP2-400F KM616V1002B
UM62256EM-70LL Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723 Text: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B	Original	PDF	PD4218165 PD424260 PD431000A PD43256B PD43256B-B PD43256BGU-70LL PD43256BGW-70 PD441000L-B PD442000L-B UM62256EM-70LL UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
KM62256BLG-7 Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12 Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC	Original	PDF	C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
Untitled Abstract: No abstract text available Text: KM616V1002B/BL, KM616V1002BI/BLI CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target.	OCR Scan	PDF	KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 200/190/180mA 200/195/190mA 44-SOJ-400
Untitled Abstract: No abstract text available Text: KM616V1002B/BL, KM616V1002BI/BLI CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM{3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns Max.) • Low Power Dissipation Standby (T T l) : 30mA(Max ) (CMOS) : 50mA(Max.) 0.5mA(Max.) - L-Ver. only	OCR Scan	PDF	KM616V1002B/BL, KM616V1002BI/BLI KM616V1002B/BL 200mA 195mA 190mA KM616V1002BJ 44-SOJ-4GO KM616V1002BT
Untitled Abstract: No abstract text available Text: KM616V1002B/BL, KM616V1002BI/BLI CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target.	OCR Scan	PDF	KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 200/190/180mA 44-SOJ-400 44-TSOP2-400F