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    KM61640 Price and Stock

    Samsung Semiconductor KM6164002BJ-12

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    Bristol Electronics KM6164002BJ-12 2,106
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    Samsung Semiconductor KM6164002AJ-17

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    Samsung Semiconductor KM6164000BLT-5L

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    Samsung Semiconductor KM6164000BLTI-7L

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    SEC KM6164002AJ-20

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    KM61640 Datasheets (109)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM6164000B Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF
    KM6164000BLI-L Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF
    KM6164000BL-L Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF
    KM6164000BLR-5L Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF
    KM6164000BLR-5L Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF
    KM6164000BLR-7L Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF
    KM6164000BLR-7L Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF
    KM6164000BLRI-10L Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF
    KM6164000BLRI-10L Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF
    KM6164000BLRI-7L Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF
    KM6164000BLRI-7L Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF
    KM6164000BLT-5L Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF
    KM6164000BLT-5L Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF
    KM6164000BLT-7L Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF
    KM6164000BLT-7L Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF
    KM6164000BLTI-10L Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF
    KM6164000BLTI-10L Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF
    KM6164000BLTI-7L Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF
    KM6164000BLTI-7L Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF
    KM6164000CLR-5L Samsung Electronics 256K x 16 bit Low Power CMOS Static RAM Original PDF

    KM61640 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM616400

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY PRELIMINARY CMOS SRAM KM6164002B, KM6164002BI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data


    Original     		PDF KM6164002B, KM6164002BI 256Kx16 44-TSOP2-400F KM616400

    Untitled

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY Preliminary CMOS SRAM KM6164002C, KM6164002CI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    Original     		PDF KM6164002C, KM6164002CI 256Kx16 25/Typ. 80/Typ.

    Untitled

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY KM6164002B, KM6164002BI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Design Target.


    Original     		PDF KM6164002B, KM6164002BI 256Kx16 250mA 240mA 230mA 44-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY Preliminary CMOS SRAM KM6164002C, KM6164002CI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    Original     		PDF KM6164002C, KM6164002CI 256Kx16 190mA 185mA 180mA 200mA 195mA

    KM6 II

    Abstract: SRAM sheet samsung KM616
    Text: KM 6 1 6 4 0 0 0 A ei cm ELECTRONICS CMOS SRAM 256Kx16 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM6164000A family is fabricated by SAMSUNG’S advanced CMOS process technology. The family can support various operating


    OCR Scan     		PDF 256Kx16 256Kx16 44-TSOP KM6164000A KM6164000A KM6 II SRAM sheet samsung KM616

    Z812

    Abstract: No abstract text available
    Text: KM6164002/L CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60 mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500/; A (Max) Operating : KM6164002-20 : 250mA (Max.)


    OCR Scan     		PDF KM6164002/L KM6164002-20 250mA KM6164002-25 240mA KM6164002-35 220mA KM684002J/U 44-SOJ-400 Z812

    KM6164002J-20

    Abstract: KM6164002J20
    Text: PRELIMINARY CMOS SRAM KM6164002 262,144 W ORDx 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA(Max.) Operating KM6164002J-20: 240mA (Max.)


    OCR Scan     		PDF KM6164002 KM6164002J-20: 240mA KM6164002J-25: 220mA KM6164002J-35: 200mA KM6164002J: 44-Pin KM6164002 KM6164002J-20 KM6164002J20

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM6164002C/CL, KM6164002CI/CLI CMOS SRAMI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Rev. 0.0 Initial release with Preliminary.


    OCR Scan     		PDF KM6164002C/CL, KM6164002CI/CLI 256Kx16 KM61640

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM6164002A CMOS SRAM 25 6K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2,1 5,20 n s M a x • Low Pow er Dissipation Standby (TTL) : 5 0 m A (M ax.) Th e K M 6 1 6 4 00 2 A is a 4 ,1 9 4 ,3 0 4 -b it high-speed Static


    OCR Scan     		PDF KM6164002A

    512X16

    Abstract: KM6164002B 512X16 sram
    Text: Pro-iïiTTin&y CMOS SRAM KM6164002B, KM6164002BI 256K x 16 Bit High-Speed CMOS Static RAM FEATURES G ENER AL DESCRIPTION •• Fast Access Time 10,12,15 * Max. - Low Power Dissipation Standby (TTL) : 40* • (Max.) The KM6164002B is a 4,194,304-bit high-speed Static Random


    OCR Scan     		PDF KM6164002B, KM6164002BI 256Kx KM6164002B I/O16 KM6164002BJ 44-SOJ-400 KM6164002BT 512X16 512X16 sram

    KM6164002j

    Abstract: No abstract text available
    Text: KM6164002/KM6164002L CMOS SRAM 2 5 6 K x 16 Bit High-Speed CM O S Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS):10 mA(Max.) 500|iA(Max.) L-Ver Operating KM6164002/L-20 : 240 mA(Max.)


    OCR Scan     		PDF KM6164002/KM6164002L 256Kx 500nA KM6164002/L-20 KM6164002/L-25 KM6164002/L-35 I/O9-I/O16 KM6164002J/LJ 44-SOJ- KM6164002/L KM6164002j

    Untitled

    Abstract: No abstract text available
    Text: P r r ^ - m in e ^ Y KM6164002B, KM6164002BI CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N •• Fast Access Time 10,12,15* • Max. - Low Power Dissipation The KM6164002B is a 4,194,304-bit high-speed Static Random


    OCR Scan     		PDF KM6164002B, KM6164002BI KM6164002B 304-bit 71b4142 G03b70Q KM6164002Bl 44-TS

    Untitled

    Abstract: No abstract text available
    Text: KM6164002B, KM6164002BI CMOS SRAM Document Tills 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997


    OCR Scan     		PDF KM6164002B, KM6164002BI 256Kx16 44-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM6164002B, KM6164002BI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    OCR Scan     		PDF KM6164002B, KM6164002BI 256Kx16 44-SOJ-400 44-TSO P2-400F

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM6164000B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision No. History Draft Data Remark 0.0 Initial d ra ft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary 1.0 Finalize December 17, 1996


    OCR Scan     		PDF KM6164000B 256Kx16 15/75mA 130mA 100pF

    Untitled

    Abstract: No abstract text available
    Text: KM6164002A, KM6164002AE. KM6164002Al CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History B fiX tia . H istory Rev. 0.0 initial release with Design Target.


    OCR Scan     		PDF KM6164002A, KM6164002AE. KM6164002Al 256Kx16 /-/20ns 15/17/20ns /240mA 280/275/270mA -/12ns 12/13/14nstput

    KM6164000B

    Abstract: KM6164000BLI-L KM6164000BL-L KM6164000BLT-5L KM6164000BLT-7L
    Text: KM6164000B Family CMOS SRAM 256Kx16 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION Process Technology : 0.4* • CMOS Organization : 256Kx16 Power Supply Voltage : Single 5V •• 10% Low Data Retention Voltage : 2V Min Three state output and TTL Compatible


    OCR Scan     		PDF KM6164000B 256Kx16 256Kx16 44-TSOP KM616V4000B KM6164000BLI-L KM6164000BL-L KM6164000BLT-5L KM6164000BLT-7L

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM6164002A CMOS SRAM 256Kx 16 Biit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 mA(Max.) (C M O S): 10 mA(Max.) Operating KM6164002A-12 : 260 mA(Max.)


    OCR Scan     		PDF KM6164002A 256Kx KM6164002A-12 164002A KM6164002A-20 KM6164002AJ 44-SOJ-4QO KM6164002A 304-bit

    Untitled

    Abstract: No abstract text available
    Text: KM6164002/KM6164002L CMOS SRAM 256Kx 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 10 mA(Max.) 500|iA(Max.) - L-Ver Operating KM6164002/L-20 : 240 mA(Max.)


    OCR Scan     		PDF KM6164002/KM6164002L 256Kx KM6164002/L-20 KM6164002/L-25 KM6164002/L-35 KM6164002J/LJ 44-SOJ- KM6164002/L

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D 7 = ^4 1 4 2 0D14230 1ST ADVANCE INFORMATION KM6164002 CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 60mA (max.)


    OCR Scan     		PDF 0D14230 KM6164002 KM6164002J-15: 280mA KM6164002J-20: 260mA KM6164002J-25: 240mA KM6164002J: 44-pin

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • D0177B0 5T7 PRELIMINARY KM6164002 CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA(Max.)


    OCR Scan     		PDF D0177B0 KM6164002 KM6164002J-20: 240mA KM6164002J-25: 220mA KM6164002J-35: 200mA KM6164002J: KM6164002

    Untitled

    Abstract: No abstract text available
    Text: KM6164002/KM6164002L CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMC>S):10 mA(Max.) 500|iA(Max.) L-Ver Operating KM6164002/L-20 : 240 mA(Max.)


    OCR Scan     		PDF KM6164002/KM6164002L KM6164002/L-20 KM6164002/L-25 KM6164002/L-35 KM6164002J/LJ 44-SOJ- KM6164Z 002152b

    altl

    Abstract: No abstract text available
    Text: Advanced CMOS SRAM KM6164000AL/AL-L 256Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. The KM6164000AL/AL-L is a 4,194,304-bit high speed • Low Power Dissipation Static Random Access Memory organized as 262,144


    OCR Scan     		PDF KM6164000AL/AL-L 256Kx16 KM6164000AL/AL-L 304-bit 6164000AL/AL-L KM6164he KM6164000ALT/ALT-L: 400mil 0D213G1 altl

    d5101

    Abstract: C5VI
    Text: KM6164002A, KM6164002AE, KM6164002AI CMOS SRAM 2S6K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17, 20ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : tOmA(Max ) Operating KM6164002A -1 5 : 210mA(Max.)


    OCR Scan     		PDF KM6164002A, KM6164002AE, KM6164002AI KM6164002A 210mA 205mA 200mA KM6164002AJ d5101 C5VI