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    KM418C256/L/SL-7

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME D KM418C256/L/SL • 7 T b 4 m 2 GGlBMTb 12=5 « S U G K CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM418C256/L/SL is a C MOS high speed 262,144 b it x 18 D ynam ic Random A ccess M em ory. Its


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    KM418C256/L/SL KM418C256/L/SL KM418C256/L/SL-7 KM418C256/L/SL-8 KM418C256/L/SL-10 130ns 150ns 100ns 180ns KM418C256/L/SL-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM418C256LL 256K x18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM418C256LL is a CMOS high speed 262,144 b it x 18 D ynam ic Random A cce ss M em ory. Its de sig n is o p tim ized fo r high perform ance ap p lica tio n s


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    KM418C256LL KM418C256LL 130ns KM418C256LL-8 150ns KM418C256LL-10 100ns 180ns KM418C256LL-7 PDF

    km418c256

    Abstract: No abstract text available
    Text: KM418C256/USL CMOS DRAM 2 5 6 K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256/L/SL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    KM418C256/USL KM418C256/L/SL KM418C256/L/SL-7 130ns KM418C256/Ã 150ns KM418C256/L/SL-10 100ns 180ns KM418C256/L/SL km418c256 PDF

    km418c256

    Abstract: M418C KM418C256A
    Text: CMOS DRAM KM418C256A/AL/ALL 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256A/AUALL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance


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    KM418C256A/AL/ALL KM418C256A/AUALL-6 KM418C256A/AUALL-7 KM418C256A/AL/A 110ns 130ns 150ns KM418C256A/AL/ALL KM418C256A/AUALL km418c256 M418C KM418C256A PDF

    Untitled

    Abstract: No abstract text available
    Text: KM418C256LL CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256LL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    KM418C256LL KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 130ns 150ns 180ns KM418C256LL PDF

    KM418C256B

    Abstract: No abstract text available
    Text: KM418C256B/BL/BLL CMOS DRAM 256K x18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256B/BLVBLL is a CMOS high spe ed 262,14 4 b it x 18 D ynam ic R andom A cce ss Memory. Its design is optimized for high performance


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    KM418C256B/BL/BLL KM418C256B/BLVBLL 256B/BL/BLL 40-LEAD KM418C256B PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D KM418C256LL • 7^4145 D0134n 72b ■ SPIGK CMOS DRAM 256K x18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256LL is a C M O S high speed 262,144 bit x 18 Dynamic Random A c ce ss Memory. Its


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    KM418C256LL D0134n KM418C256LL 130ns KM418C256LL-8 150ns KM418C256LL-10 100ns 180ns KM418C256LL-7 PDF

    ida5

    Abstract: No abstract text available
    Text: KM418C256B CMOS DRAM 256K x 18 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 18 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -6, -7 or -8 , power consumption (Normal


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    KM418C256B 256Kx18 ida5 PDF

    km418c256bj

    Abstract: NZ34 A6Dz
    Text: CMOS DRAM KM418C256B 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fam ily of 2 6 2,144 x 18 bit Fast Page M ode C M O S DRAM s. Fast Page M ode o ffe rs high speed random acce ss of m em ory cells w ithin the sam e row. A ccess tim e -6, -7 or -8 , pow er consum ption (Norm al


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    KM418C256B 256Kx18 km418c256bj NZ34 A6Dz PDF

    Untitled

    Abstract: No abstract text available
    Text: KM418C256/L/SL CMOS DRAM 256Kx 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erfo rm ance range: Th e S am su ng K M 41 8 C 2 5 6 /L /S L is a C M O S high speed 262,144 bit x 18 D ynam ic R andom A ccess M em o ry. Its K M 418C 256/L/S L-7


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    KM418C256/L/SL 256Kx 256/L/S 130ns 150ns 100ns 180ns PDF

    km418c256

    Abstract: KM418C256/L/SL-7
    Text: KM418C256/L/SL CMOS DRAM 2 5 6 K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256/L/SL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    KM418C256/L/SL KM418C256/L/SL-7 KM418C256/L/SL-8 KM418C256/USL-10 100ns 130ns 150ns 180ns KM418C256/USL KM418C256/L/SL km418c256 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b? E KM418C256A/AL/ALL D • 7^4142 GGISÖT? 3b l « S r i G K CMOS DRAM 256Kx 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256A/AUALL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access


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    KM418C256A/AL/ALL 256Kx KM418C256A/AUALL 110ns KM418C256A/AL/ALL-7 130ns KM418C256A/AL/ALL-8 150ns KM418C256A/AUALL-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM418C256B 256K x 18 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fa m ily of 262 ,1 4 4 x 18 bit Fast Page M ode CM O S DRA M s. Fast Page M ode o ffe rs high speed random a cce ss of m em ory cells w ithin the sam e row. A ccess tim e -6, -7 or -8 , pow er consum ption (Norm al


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    KM418C256B 71L4142 DD20251 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM418C256LL CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM418C256LL is a CMOS high speed 262,144 b it x 18 D ynam ic Random A cce ss M em ory. Its design is o p tim ized fo r high perform ance ap p lica tio n s


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    KM418C256LL KM418C256LL KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 130ns 150ns 100ns 180ns PDF

    8C2S6-10

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS DRAM KM418C256 2 5 6 K X 1 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The Samsung K M 4 1 8 C 2 5 6 is a C M OS high speed 2 6 2 ,1 4 4 bit X 18 Dynamic Random A ccess M em ory. Its design is optim ized for high perform ance applications


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    KM418C256 100ns 180ns 40-LEAD 8C2S6-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM418C256 CMOS DRAM 2 5 6 K X 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Sam sung K M 4 1 8 C 2 5 6 is a C M O S high speed 2 6 2 ,1 4 4 bit X 1 8 Dynamic Random A ccess M em ory. Its design is optimized for high perform ance applications


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    KM418C256 40-LEAD PDF

    km418c256

    Abstract: KM418C256J
    Text: PRELIMINARY KM418C256 CMOS DRAM 256'KX 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 8 C 2 5 6 is a C M OS high speed 2 6 2 ,1 4 4 bit X 18 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


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    KM418C256 km418c256 KM418C256J PDF

    KM44C4000aS 6

    Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6


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    KM41C4000C-5 KM41C4000CL-5 KM41C4002C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000CL-7 KM41C4002C-7 KM41V4000C-7 KM41V4000CL-7 KM41C4000C-8 KM44C4000aS 6 KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL PDF

    Untitled

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23


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    KM41C1000D KM44C256D. KM41C4000C KM41V4000C. PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C256LL CMOS DRAM 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256LL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    KM416C256LL 256Kx KM416C256LL 130ns KM416C256LL-8 150ns KM416C256LL-10 100ns 180ns KM416C256LL-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C256LL 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM416C256LL is a CMOS high speed 262,144 b it x 16 D ynam ic Random A cce ss M em ory. Its design is op tim ized fo r high perform ance ap p lica tio n s


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    KM416C256LL KM416C256LL KM416C256LL-7 130ns KM416C256LL-8 150ns KM416C256LL-10 100ns 180ns PDF

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 KM41C4000C-7 KM41C4000C-8 KM41C4000C-5


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    KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000 PDF

    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


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    KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8" PDF

    KM418C256

    Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80


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    KM41C1000D# KM41C10OOD-L# 256Kx4) 256Kx4 KM44C256D# KM44C256D-L# KM41C4000C# KM41C4000CL# KM41C4002C# KM41V4000C# KM418C256 KM48C2100AL KM416C254 KM44V4100AL KM44C1003 PDF