KMM5364005BSW
Abstract: KMM5364005BSWG
Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS
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KMM5364005BSW/BSWG
KMM5364005BSW/BSWG
4Mx16
KMM5364005B
4Mx36bits
KMM5364005B
4Mx16bits
72-pin
KMM5364005BSW
KMM5364005BSWG
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KMM5328004BSW
Abstract: KMM5328004BSWG
Text: DRAM MODULE KMM5328004BSW/BSWG KMM5328004BSW/BSWG EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328004B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328004B consists of four CMOS 4Mx16bits DRAMs in TSOP packages
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Original
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PDF
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KMM5328004BSW/BSWG
KMM5328004BSW/BSWG
4Mx16,
KMM5328004B
8Mx32bits
KMM5328004B
4Mx16bits
72-pin
KMM5328004BSW
KMM5328004BSWG
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KMM5324004BSW
Abstract: KMM5324004BSWG
Text: DRAM MODULE KMM5324004BSW/BSWG KMM5324004BSW/BSWG EDO Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324004B is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM5324004B consists of two CMOS 4Mx16bits DRAMs in TSOP packages
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Original
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PDF
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KMM5324004BSW/BSWG
KMM5324004BSW/BSWG
4Mx16,
KMM5324004B
4Mx32bits
KMM5324004B
4Mx16bits
72-pin
KMM5324004BSW
KMM5324004BSWG
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capacitor taa
Abstract: KMM5328004BSW KMM5328004BSWG
Text: DRAM MODULE KMM5328004BSW/BSWG KMM5328004BSW/BSWG EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328004B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328004B consists of four CMOS 4Mx16bits DRAMs in TSOP packages
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Original
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PDF
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KMM5328004BSW/BSWG
KMM5328004BSW/BSWG
4Mx16,
KMM5328004B
8Mx32bits
KMM5328004B
4Mx16bits
72-pin
capacitor taa
KMM5328004BSW
KMM5328004BSWG
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KMM5364005BSW
Abstract: KMM5364005BSWG
Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS
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Original
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PDF
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KMM5364005BSW/BSWG
KMM5364005BSW/BSWG
4Mx16
KMM5364005B
4Mx36bits
KMM5364005B
4Mx16bits
72-pin
KMM5364005BSW
KMM5364005BSWG
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KMM5324004BSW
Abstract: KMM5324004BSWG km416c4104bs
Text: DRAM MODULE KMM5324004BSW/BSWG KMM5324004BSW/BSWG EDO Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324004B is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM5324004B consists of two CMOS 4Mx16bits DRAMs in TSOP packages
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Original
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PDF
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KMM5324004BSW/BSWG
KMM5324004BSW/BSWG
4Mx16,
KMM5324004B
4Mx32bits
KMM5324004B
4Mx16bits
72-pin
KMM5324004BSW
KMM5324004BSWG
km416c4104bs
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5368005BSW/BSWG KMM5368005BSW/BSWGEDO Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368005B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368005B consists of four CMOS 4Mx16bits and two CMOS Quad CAS
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Original
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PDF
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KMM5368005BSW/BSWG
KMM5368005BSW/BSWGEDO
4Mx16
KMM5368005B
8Mx36bits
KMM5368005B
4Mx16bits
72-pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KM M 3 7 2 E 4 0 4 B S Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KM M 3 7 2 E 4 0 4 B S Revision History Version 0.0 (Sept, 1997) ; Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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OCR Scan
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PDF
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4Mx72
4Mx16
372E404BS
4096cycles/64ms
100Max
54Max)
KMM372E404BS
-KM416C4104BS
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS
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OCR Scan
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PDF
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KMM5364005BSW/BSWG
KMM5364005BSW/BSWG
4Mx16
KMM5364005B
4Mx36bits
4Mx16bits
72-pin
KMM5364005BSW
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364E40 8 4BS KMM364E40(8)4BS EDO Mode 4M x 64 DRAM DIMM Using 4M x16, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364E40(8)4B is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM364E40(8)4B consists of four CMOS 4Mx16bits DRAMs
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OCR Scan
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PDF
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KMM364E40
4Mx64bits
4Mx16bits
400mil
168-pin
KMM364E404BS
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372E404BS KMM372E404BK/BS EDO Mode 4M x 72 DRAM DIMM Using 4Mx16 & 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372E404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAM in
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OCR Scan
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PDF
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KMM372E404BK/BS
4Mx16
KMM372E404B
4Mx72bits
4Mx16bits
400mil
168-pin
KMM372E404BS
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5368005BSW/BSWG KMM5368005BSW/BSWGEDO Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368005B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368005B consists of four CMOS 4Mx16bits and two CMOS Quad CAS
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OCR Scan
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PDF
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KMM5368005BSW/BSWG
KMM5368005BSW/BSWGEDO
4Mx16
KMM5368005B
8Mx36bits
KMM5368005B
4Mx16bits
72-pin
KMM5368005BSW
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