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    KM23V4200D Search Results

    KM23V4200D Datasheets (1)

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    KM23V4200D Samsung Electronics Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23V4200D 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


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    PDF KM23V4200D 256Kx16) 100ns 120ns 40-DIP-600 KM23V4200D 40-DIP-600) 015MIN

    40-DIP-600

    Abstract: 40DIP600 KM23V4200D
    Text: CMOS MASK ROM KM23V4200D 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    Original
    PDF KM23V4200D 256Kx16) 100ns 120ns 40-DIP-600 KM23V4200D 015MIN 40-DIP-600 40DIP600

    Untitled

    Abstract: No abstract text available
    Text: KM23V4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES 26 2,14 4 x 16 bit organ izatio n Fast access tim e :1 0 0 n s (m a x .) S up ply vo lta g e : sin gle +3.3V C urrent con sum p tion O perating : 25m A (m ax.) S tandby iS O S ^m a x.)


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    PDF KM23V4200D 256Kx16) 4200D 40-DIP-600C

    mask rom

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23V4200D 4M-Bit 256KX16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time 3.3V Operation: 100ns(Max.) 3.0V Operation: 120ns<Max.) . Supply voltage: single +3.0V/ single +3.3V • Current consumption


    OCR Scan
    PDF KM23V4200D 256KX16) 100ns 40-DIP-600 KM23V4200D mask rom

    4200d

    Abstract: No abstract text available
    Text: KM23V4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES 26 2,14 4 x 16 bit organ izatio n Fast access tim e :1 0 0 n s (m a x .) S up ply volta ge : single +3.3V C urrent con sum p tion O perating : 25m A (m ax.) S tandby :3 0 § ,(m a x .)


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    PDF KM23V4200D 256Kx16) 4200D

    Untitled

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16


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    PDF KM23C4000D KM23C4100D KM23C41 KM23V64000T. KM23V64005AG KM23V64005ATY. KM23V64205ASG KM23SV32205T

    48TSOP1

    Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
    Text: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15


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    PDF 512KX8 KM23C400QD KM23C4QOOD KM23C4Q00D KM23C40QQD TY-10 KM23C4000D 7Y-12 KM23V4000D 48TSOP1 MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12