capacitor poliester 100nf
Abstract: CAPACITOR 5D 3KV 5d 3kv kje y4 capacitor 100nF poliester Thomson csf ceramic capacitor IEC-384-9 capacitor poliester 10nf Carimbo ceramic capacitor 5OQ322MAEAA
Text: Contents Page • Selection Guide 02 • Manufacturing process 03/04 • General specifications 05 • Temperature Coefficient curves 06 • Packaging 07 TPCAM0198 • Marking 08 • Taping specifications 09/10 • How to order 11/12 • Class I and SL specifications
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TPCAM0198
5OKB10
B-1050
capacitor poliester 100nf
CAPACITOR 5D 3KV
5d 3kv
kje y4
capacitor 100nF poliester
Thomson csf ceramic capacitor
IEC-384-9
capacitor poliester 10nf
Carimbo ceramic capacitor
5OQ322MAEAA
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transistor SMD s72
Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той
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OT323
BC818W
MUN5131T1.
BC846A
SMBT3904,
MVN5131T1
SMBT3904
OT323
transistor SMD s72
nec mys 501
MYS 99
transistor 8BB smd
st MYS 99 102
kvp 81A
kvp 81A DIODE
Kvp 69A
kvp 86a
smd transistor A7p
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kje x3
Abstract: No abstract text available
Text: REVISIONS X M ADE FRO M UJ CN J E L 231&9 P / 3 4 P R & 2 CM Z S 2 \5 D H A T 5 3 ,5 3 m m 0 " i^ 5 J O M S 4 CN Ì.W \ 3ZZ4-3 M I J U H A 90 t-» Im fn ) E ili U.' : i n ^ C f 9 i& 9 ^ % £ = - i1 8 D fR 6 F .“ u i ^ O iT ia n n ir i^ . 0 3 . 0 . R E F ,
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cxk77b3611
Abstract: KJE 6A
Text: SONY CXK77B3611 32,768-WORD by 36-BIT HIGH SPEED BiCMOS SYNCHRONOUS STATIC RAM -5/6/7 Advanced Information Description The CXK77B3611 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 32,768-words by 36-bits. This synchronous SRAM integrates input registers, high speed SRAM, output registers/latches and write buffers onto
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CXK77B3611
768-WORD
36-BIT
CXK77B3611
768-words
36-bits.
3fl53fl3
00Q7423
32KX36-6,
KJE 6A
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Untitled
Abstract: No abstract text available
Text: 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM MT58LC128K18B4, MT58LC64K32B4, MT58LC64K36B4; MT58LC128K18E1, MT58LC64K32E1, MT58LC64K36E1 2Mb SYNCBURST SRAM 3.3V V dd, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times
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MT58LC128K18B4,
MT58LC64K32B4,
MT58LC64K36B4;
MT58LC128K18E1,
MT58LC64K32E1,
MT58LC64K36E1
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Untitled
Abstract: No abstract text available
Text: ADVANCE 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM MICRON' I TECHNOLOGY, INC. MT58L256L18F, MT58L128L32F, MT58L128L36F; MT58L256V18F, MT58L128V32F, MT58L128V36F 4Mb SYNCBURST SRAM 3.3V V dd, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times
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MT58L256L18F,
MT58L128L32F,
MT58L128L36F;
MT58L256V18F,
MT58L128V32F,
MT58L128V36F
MT58L256L18F
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Untitled
Abstract: No abstract text available
Text: l U II^ E a r n iM I 1Mb: 64K x 18, 32K x 32/36 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM 1M b S Y N C B U R S T S S R A M 3.3V Vdd, 3.3V I/O, Flow-Through S P MT58L32L32F' FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply Vdd
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kje w6
Abstract: No abstract text available
Text: KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM GENERAL DESCRIPTION FEATURES The Samsung KM428C257 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random access memory RAM port and 512 x 8 static serial access memory (SAM) port.
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KM428C257
KM428C257
130ns
150ns
110ns
40-PIN
40/44-PIN
KM4216C/V255/6/8
64-PIN
D02E313
kje w6
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY l^ iic n a N 4 MEG X MT16LD464 X 64 DRAM MODULE DRAM 4 MEG x 64 M O n i l l F IV IV U U U b 32 MEGABYTE, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin, dual-in-line memory module (DIMM) • High-performance CMOS silicon-gate process
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MT16LD464
168-pin,
88QmW
048-cycle
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Untitled
Abstract: No abstract text available
Text: 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM M IC R O N I TECHNOLOGY, INC. MT58L256L18F, MT58L128L32F, MT58L128L36F; MT58L256V18F, MT58L128V32F, MT58L128V36F 4Mb SYNCBURST SRAM 3.3V V dd, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times
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MT58L256L18F,
MT58L128L32F,
MT58L128L36F;
MT58L256V18F,
MT58L128V32F,
MT58L128V36F
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kje x6
Abstract: kje y4 KJE T5 256x16e KJE T3 kje y9 KJE T4 Y1 kje
Text: IS 42S 16128 128K Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES ADVANCE INFORMATION MAY 1998 DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply ISSI's4M b Synchronous DRAM IS42S16128 is organized as
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400-mil
50-pin
IS42S16128
131072-word
16-bit
performanS42S16128
DR005-OC
IS42S16128
DR005-OC
kje x6
kje y4
KJE T5
256x16e
KJE T3
kje y9
KJE T4
Y1 kje
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2sb504
Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St
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S029747
SS963&
2sb504
2t306
2N5983
2SD588
2sd73
2sc497
HD6801V
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TRANSISTOR SMD T1P
Abstract: schematic computer 80386 chip mother board sis 662 NEW DATABASE - 350 MILLION FROM 8500 MANUFACTURERS 80486 microprocessor circuit diagram SmD TRANSISTOR a77 SMD Transistor jly PALCE16V8-10 ksp 13 f10 ksp 13 replacement
Text: a Dynamic Memory Design 1991/1992 Data Book/Handbook Advanced Micro Devices % M aeey D ynam ic M em ory D esign 1991/1992 Data Book/Handbook D V A N C E D M I C R O D E V I C E S 1991 Advanced Micro Devices, Inc. A dvanced Micro Devices reserves the right to make changes in its products
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accuram29C676
07606C
Am7202A
Am7203A
Am7204A
Am7205A
TRANSISTOR SMD T1P
schematic computer 80386
chip mother board sis 662
NEW DATABASE - 350 MILLION FROM 8500 MANUFACTURERS
80486 microprocessor circuit diagram
SmD TRANSISTOR a77
SMD Transistor jly
PALCE16V8-10
ksp 13 f10
ksp 13 replacement
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