WELLER EC 2001
Abstract: WELLER LR 20 TIP weller WECP-80 weller soldering ecp weller soldering tip TCP weller wecp 20 weller wecp 50 DS801 WELLER "5 10 201 99" WELLER 5 24 110 99
Text: S o l d e r i n g , D e s o l d e r i n g , R e w o r k / R e p a i r To o l s a n d To r c h e s Weller Contents Temtronic / SL-Series 77 - 97 Stations Options Soldering Tips Exin-5 IC-Extractor SFA / SFC 78 80 84 92 94 96 - 79 83 91 93 95 97 Magnastat
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Untitled
Abstract: No abstract text available
Text: M icrochip 24AA128/24LC128/24FC128 128K I2C CMOS Serial EEPROM DEVICE SELECTION TABLE PACKAGE TYPE PDIP Vcc Range Part Number Max Clock Frequency Temp Ranges 24AA128 1.8-5.5V 400 kH zt C 24LC128 2.5-5.5V 400 kHz* I, E 24FC128 2.5-5.5V 1 MHz I A0 □ • Low power CMOS technology
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24AA128/24LC128/24FC128
24AA128
24FC128
64-byte
DS21191F-page
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Untitled
Abstract: No abstract text available
Text: FM M J5484 to FM M J5486 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PAR TM AR KIN G DETAILS: FM M J5484 - H 84 F M M J 5 4 8 5 - H 85 F M M J 5 4 8 6 - H 86 APPLICATION AREAS: * VH F/U H F AMPLIFIERS ABSOLUTE M A X IM U M RATINGS at Tamb = 2 5 °C
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J5484
J5486
J5485
J5486
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CCIR 468-2
Abstract: TDA3830
Text: DEVELOPMENT DATA TDA3830 This data sheet contains advance inform ation and specifications are subject to change w ith o u t notice. r - BTSC-STEREO / SAP / DBX DECODER GENERAL DESCRIPTION The T D A 3 8 3 0 is a sound processor fo r stereo/second audio program m e SAP baseband signals in
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TDA3830
TDA3830
32-pin
CCIR 468-2
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FM receiver CIRCUIT DIAGRAM and specification
Abstract: FM radio CIRcuit DIAGRAM RF Amplifier AM receiver TEA5592 AM FM radio ceramic 468 kHz pin diagram of AM receiver tt 2232 toko coils 10.7 mhz ac voltage stabilizer circuit diagram
Text: DEVELOPMENT DATA T h is d ata sheet c o n ta in s advance in fo rm a tio n and s p e cifica tio n s are su b je ct t o change w it h o u t n o tic e . TEA5592 AM/FM RADIO RECEIVER CIRCUIT GENERAL DESCRIPTION The T E A 5 5 9 2 is a 24-pin integrated radio c irc u it designed fo r use in all personal audio and car radio
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TEA5592
TEA5592
24-pin
301-20N
SFU468B.
SFE10
7110fl2b
FM receiver CIRCUIT DIAGRAM and specification
FM radio CIRcuit DIAGRAM
RF Amplifier AM receiver
AM FM radio
ceramic 468 kHz
pin diagram of AM receiver
tt 2232
toko coils 10.7 mhz
ac voltage stabilizer circuit diagram
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FM receiver CIRCUIT DIAGRAM and specification
Abstract: FM RADIO RECEIVER circuit diagram ac voltage stabilizer circuit diagram ceramic 468 kHz FM radio CIRcuit DIAGRAM MC115 AM FM radio toko if coils 10.7 mhz fm receiver toko IF FM detector
Text: D E V E L O P M E N T DATA T h is data sheet c on ta ins advance in fo rm a tio n and sp e cificatio n s are subject to c hange w ith o u t notice. TEA5594 AM/FM RADIO RECEIVER CIRCUIT G E N E R A L DESCRIPTIO N The T E A 5 5 9 4 is a 32-pin integrated radio c irc u it designed fo r use in all E lectronic Tuned Radio ETR
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TEA5594
TEA5594
32-pin
SFE10
CDA10
FM receiver CIRCUIT DIAGRAM and specification
FM RADIO RECEIVER circuit diagram
ac voltage stabilizer circuit diagram
ceramic 468 kHz
FM radio CIRcuit DIAGRAM
MC115
AM FM radio
toko if coils 10.7 mhz
fm receiver toko
IF FM detector
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BCW60 Series
Abstract: BCW60 BCW60A BCW60B BCW60C BCW60D
Text: • bbSB^Bl ÜÜEM573 Ufi H A P X N AMER PHILIPS/DISCRETE BCW60 SERIES b?E D J \ _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a m icro m in ia tu re p lastic envelope, intended fo r lo w level, lo w noise, low freq u e n cy purpose applica tio ns in h y b rid circu its.
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EM573
BCW60
OT-23.
DD24S7b
BCW60 Series
BCW60A
BCW60B
BCW60C
BCW60D
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30255
Abstract: qSOT-23
Text: M O T O R O L A SC i D I O D E S / O P T O } 6 3 6 7 2 5 5 M O T O R O L A SC 34 DF|b3b72SS DIODES/OPTO 34C 003Ô2SS q 30255 SOT23 (continued) BCW66F,G,H DEVICE NO. SMALL-SIGNAL NPN TRANSISTOR TOP VIEW C I I • *— ' - t =i B Device D e s ig n e d fo r lo w -freq u en cy d river s ta g e an d switching
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b3b72SS
BCW66F
BCW66G
BCW66H
b3b725S
30255
qSOT-23
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Untitled
Abstract: No abstract text available
Text: FMMT4402 FMMT4403 SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS PARTMARKING DETAILS: FMMT4402 - 2K FMMT4403 - 2L ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current
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FMMT4402
FMMT4403
FMMT4402
FMMT4403
FMMT4402/4403
200/is.
DS219
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CMA102
Abstract: marking 2gp BC849 BC849B BC849C BC850 BC850B BC850C silicon planar epitaxial transistors
Text: • ^53*131 00244b2 4SI HIAPX BC849 BC850 b7E T> N AUER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic SOT-23 package. Q U IC K R E F E R E N C E D A T A BC849 C o lle c to r-e m itte r voltage V g E = C o lle c to r-e m itte r voltage (open base)
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00244b2
BC849
BC850
OT-23
OT-23.
BC849
35MHz
CMA102
marking 2gp
BC849B
BC849C
BC850
BC850B
BC850C
silicon planar epitaxial transistors
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RADIO RECEIVER IC tea5591
Abstract: FM Receiver Circuits TEA5591A FM radio CIRcuit DIAGRAM ceramic 468 kHz ac voltage stabilizer circuit diagram Applications for TEA5591 am fm frontend AM FM radio TEA5591A am receiver circuit diagram and c
Text: DEVELOPMENT DATA This data sheet contains advance inform ation and TEA5591A specifications are subject to change w ith o u t notice. y v AM/FM RADIO RECEIVER CIRCUIT G E N E R A L DESC RIPTIO N The T E A 5 5 9 1 A is a 24-pin integrated radio c irc u it, derived fro m the T E A 5591 and is designed fo r use
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TEA5591A
TEA5591A
24-pin
TEA5591
7110fl2fci
RADIO RECEIVER IC tea5591
FM Receiver Circuits TEA5591A
FM radio CIRcuit DIAGRAM
ceramic 468 kHz
ac voltage stabilizer circuit diagram
Applications for TEA5591
am fm frontend
AM FM radio
am receiver circuit diagram and c
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diode marking DL
Abstract: marking code JD BAW56 SOT23 JE IMBD4148-A2 A3 marking diode marking code 10 sot23 BAL99 BAV100 BAV101 BAV102
Text: Surface M o u n t Sw itching Diodes 350mW Switching Diodes/SOT23 M a rk in g Code* Peak Reverse Voltage Maximum Reverse C u rre n t @ 25°C Capacitance V R = VF = 0 Reverse R ecovery T im e @ VpK V u. lR ma > vR PRV V _U- M a x im u m F o rw a rd V olta g e D rop
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350mW
Diodes/SOT23
BAV70
BAV99
BAW56
BAL99
IMBD4148
IMBD4448
500mW/MiniMELF
DL/LL4148
diode marking DL
marking code JD BAW56
SOT23 JE
IMBD4148-A2
A3 marking diode
marking code 10 sot23
BAV100
BAV101
BAV102
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SST4400
Abstract: transistor bI 240 2n4401 C31 2n4401 smt 2n4401 die
Text: DIE No. r NPM Medium Power TRANSISTOR DIE No. C— 31 • DESCRIPTION Symbol Value Unit Collector-Emitter Voltage VcEO 40 V Collector-Base Voltage V cbo 50 V Emitter-Base Voltage V ebo 6 V Collector Current Continuous lc 800 mA Parameter SST SOT23 200 SMT (SC59)
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OT323)
500mA
150mA,
SST4400
transistor bI 240
2n4401 C31
2n4401 smt
2n4401 die
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ZR25D01
Abstract: No abstract text available
Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZR25D ISSUE 2 - FEBRUARY 1998 DEVICE DESCRIPTION FEATURES The ZR25D uses a bandgap circuit design to achieve a pre cisio n m icro p o w e r voltage reference o f 2.5 volts. The device is available in a sm all outline SOT23 surface m ount
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ZR25D
ZR25D
ZR25D02
ZR25D01
ZR25D01
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lm434
Abstract: lm1111 IM1117 SDT23 S0T223-4 rgb led panel RSDS LM4340 LM2710 T0220-11 SP SOT23-5
Text: micro SMD SC-70 0JA 480 °c/w SOT-23 0JA 240 °C/W PSOP-8 0JA 43 °C/W SOT-223 0JA 220 °C/W so / j ^ h a m m m 'g . 0 J A 100-190 °C/W 0JA75-11OX/W ♦ TO-263 ( K S M Ê Â S f i* ) 0JA 35-60 °C/W * ^ 8 ^ 1 ® (MSOP) 0JA 220 °C/W CSP-32 0JA 88 °C/W
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SC-70
ejA480Â
OT-23
6JA100-190
OT-223
9JA75-110Â
O-263
CSP-32
O-220
O-252
lm434
lm1111
IM1117
SDT23
S0T223-4
rgb led panel RSDS
LM4340
LM2710
T0220-11
SP SOT23-5
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Untitled
Abstract: No abstract text available
Text: FMMT3903 FMMT3904 SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FM M T3903 - 1W FM M T3904 - 1A ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL C ollector-B ase V oltag e C o lle c to r-E m itte r V oltage V C BO E m itter-B ase V oltage C on tin u o u s C ollecto r C urrent
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FMMT3903
FMMT3904
T3903
T3904
FMMT3903/3904
T3903
T3904
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BCB60
Abstract: BC860 BC859 BC859A BC859B BC859C BC860A BC860B BC860C BCB59
Text: • bhS3n31 □ÜS447CI 755 BIAPX BC859 BC860 b?E J> N AUER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic SOT-23 package p rim a rily intended f o r low-noise in p u t stages in tape recorders, h i-fi a m p lifiers and o th e r audio freq u e n cy e q u ipm ent in th ic k and th in -film h y b rid circu its.
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bhS3n31
GE447lÃ
BC859
BC860
OT-23
BC859
bbS3T31
G024M63
BCB60
BC860
BC859A
BC859B
BC859C
BC860A
BC860B
BC860C
BCB59
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br b2d
Abstract: TRANSISTOR D 1853 SMD Transistor 7e lg smd transistor br- b2d transistor smd marking LE TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE oc 5B7 Marking smd TRANSISTOR code 7e
Text: m bbS3T31 Ü02S67S b2D H A P X N AMER PHILIPS/DISCRETE PMBT5088 b?E D J V _ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal tran sisto r in plastic SOT-23 envelope intended fo r low-noise in p u t stages in audio e quip m e n t, when using SM D tech no lo g y.
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b53131
PMBT5088
OT-23
OT-23.
100juA
100/UA
br b2d
TRANSISTOR D 1853
SMD Transistor 7e
lg smd transistor
br- b2d
transistor smd marking LE
TRANSISTOR SMD MARKING CODE ce
TRANSISTOR SMD MARKING CODE oc
5B7 Marking
smd TRANSISTOR code 7e
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S0T23-5
Abstract: TSS0P16 S0T23 sc 6038 LM4765T LM2710 M1117 SDT23 TSS0P14 LM1117
Text: micro SM D SC-70 SOT-23 'M R * s y ? ï$ 0 JA 480 °C/W 0JA 240 "C/W PSOP-8 SOT-223 0 J A 220 °C/W SO ( /J X S 0 M * 0 J A 43 °C/W 0 J A 100-190 °c/w 0JA75-11O oC/W ♦ * TO-263 8 31 ö l TSSOP 0 J A 60-130 “C /W (M SO P) 0 J A 35-60 "C/W 0 j a 220 °C/W
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SC-70
OT-23
6JA100-190
OT-223
ejA75-110Â
O-263
CSP-32
6JA88
T0-220
O-252
S0T23-5
TSS0P16
S0T23
sc 6038
LM4765T
LM2710
M1117
SDT23
TSS0P14
LM1117
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c857
Abstract: TRA BC857 KH SOT23
Text: r Z 7 SGS-THOMSON Ä T # Kffloeœiniera «® BC857 BC858 SMALL SIGNAL PNP TRANSISTORS Type M a rk in g B C 8 57 A 3E B C 857B 3F B C 8 58 A 3J B C 858B 3K . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING
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BC857
BC858
BC847
OT-23
c857
TRA BC857
KH SOT23
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KH SOT23
Abstract: No abstract text available
Text: ., MMBD914 CONNECTION DIAGRAM SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1 P. See 1N4148 for characteristics. Absolute Maximum Ratings' Symbol TA = 25 °C unless otherwise noted Parameter Value Units W|V Working Inverse Voltage 75 V lo
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MMBD914
OT-23
1N4148
KH SOT23
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TOSHIBA 2SA1213Y
Abstract: S8520E50MC E50M 2SA1213Y MA737 IFR7606 c50mcb S-8520B36MC-ARV-T2 seiko 320 240 S-8520
Text: Rev.7.4_io PWM Control & PWM/PFM Control Step-Down Switching Regulator-Controllers Q_R«9n/ft* 9 i <5 • " eries The S-8520/8521 Series consists of C M O S step-dow n sw itching regulatorcontrollers with P W M -control S-8520 and P W M /P F M -sw itched control (S8521). These devices contain a reference voltage source, oscillation circuit,
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S-8520/8521
S-8520)
S-8521)
S-8520
S-8521
work-8521B30MC
S-8521F33MC
S-8521D50MC
S-8521B50MC
TOSHIBA 2SA1213Y
S8520E50MC
E50M
2SA1213Y
MA737
IFR7606
c50mcb
S-8520B36MC-ARV-T2
seiko 320 240
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sot23 marking code 158
Abstract: KH SOT23
Text: SIEMENS BCR 158 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor <R1=2.2lc£2l R2=47ki2 Type Marking Ordering Code Pin Configuration BCR 158 WIs 1=B Q62702-C2338 Package 2=E 3=C SOT-23
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47ki2)
Q62702-C2338
OT-23
300ns;
sot23 marking code 158
KH SOT23
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BC856B
Abstract: BC666 BC856 BC856A BC857 BC857A BC857B BC857C BC858 BC858A
Text: • bbS3^31 0024471 4b4 BIAPX N AMER PHILIPS/DISCRETE BC856 BC857 BC858 b?E D J V . SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a SOT-23 plastic package. Q U IC K R E F E R E N C E D A T A BC856 C o lle c to r-e m itte r voltage + V g g = 1 V
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BC856
BC857
BC858
OT-23
BC857
BC856B
BC666
BC856
BC856A
BC857A
BC857B
BC857C
BC858
BC858A
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