MAAPGM0012-DIE
Abstract: MAAPGM0013-DIE Ka-band
Text: RO-P-DS-3058 - - MAAPGM0013-DIE 200mW Ka-Band Power Amplifier 32.0-36.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ ♦ 32.0-36.0 GHz GaAs MMIC Amplifier 200mW Output Power Level 32.0-36.0 GHz Operation Variable Drain Voltage 5-6V Operation Self-Aligned MSAG MESFET Process
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Original
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RO-P-DS-3058
MAAPGM0013-DIE
200mW
MAAPGM0012-DIE
MAAPGM0013-DIE
Ka-band
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PDF
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AFM08P2-000
Abstract: ka band gaas MESfet
Text: Ka Band Power GaAs MESFET Chip AFM08P2-000 Features • 24 dBm Output Power @ 18 GHz 0.110 mm Gate 0.110 mm 0.395 mm ■ High Associated Gain, 8.5 dB @ 18 GHz Drain ■ High Power Added Efficiency, 20% ■ Broadband Operation, DC–40 GHz ■ 0.25 µm Ti/Pd/Au Gates
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Original
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AFM08P2-000
AFM08P2-000
6/99A
ka band gaas MESfet
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PDF
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k band MESFET S parameter
Abstract: 16005-2 k MESFET S parameter 867 905 352 AFM06P2-000 ka band ka band gaas MESfet MESFET ka 2619
Text: Ka Band Power GaAs MESFET Chip AFM06P2-000 Features • 22.5 dBm Output Power @ 18 GHz Drain 0.110 mm Gate 0.110 mm 0.395 mm ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% ■ Broadband Operation, DC–40 GHz ■ 0.25 µm Ti/Pd/Au Gates
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Original
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AFM06P2-000
AFM06P2-000
6/99A
k band MESFET S parameter
16005-2
k MESFET S parameter
867 905 352
ka band
ka band gaas MESfet
MESFET
ka 2619
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PDF
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4232 gm
Abstract: AFM04P2-000
Text: Ka Band Power GaAs MESFET Chip AFM04P2-000 Features • 21 dBm Output Power @ 18 GHz Drain 0.110 mm Gate 0.110 mm 0.395 mm ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, DC–40 GHz ■ 0.25 µm Ti/Pd/Au Gates
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Original
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AFM04P2-000
AFM04P2-000
12/99A
4232 gm
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PDF
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80846
Abstract: 7912 pt 8819 62855 4407 f 4558 ma 8920 pt 2358
Text: Ka Band Power GaAs MESFET AFM06P2-212, 213 Features 213 Drain • 22 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz Source Source ■ High Power Added Efficiency, 23% Gate Drain Source ■ Broadband Operation, DC–18 GHz ■ 0.25 µm Ti/Pd/Au
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Original
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AFM06P2-212,
The131
2/99A
80846
7912
pt 8819
62855
4407
f 4558
ma 8920
pt 2358
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PDF
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AFM04P2
Abstract: 43171 69318
Text: Ka Band Power GaAs MESFET Chip AFM04P2-000 Features • 21 dBm Output Power @ 18 GHz Drain 0.110 mm Gate 0.110 mm 0.395 mm ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, DC–40 GHz ■ 0.25 µm Ti/Pd/Au Gates
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Original
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AFM04P2-000
6/99A
AFM04P2
43171
69318
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PDF
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ka band gaas MESfet
Abstract: MAAPGM0012-DIE ka-band amplifier RO-P-DS-3059
Text: RO-P-DS-3059 - - MAAPGM0012-DIE 50 mW Ka-Band Power Amplifier 31.5-36.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ ♦ 31.5-36.0 GHz GaAs MMIC Amplifier 50 mW Output Power Level 31.5 - 36.0 GHz Operation Variable Drain Voltage 4-6V Operation Single Voltage Operation
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Original
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RO-P-DS-3059
MAAPGM0012-DIE
MAAPGM0012-DIE
ka band gaas MESfet
ka-band amplifier
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PDF
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80846
Abstract: pt 8819 MESFET S parameter ka band gaas MESfet ka band gaas mesfet Package ma 8920 pt 2358 AFM06P3-212 AFM06P3-213
Text: Ka Band Power GaAs MESFET Chips AFM06P3-212, AFM06P3-213 Features 213 • 22 dBm Output Power @ 18 GHz Drain Source ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% Source Gate Drain ■ Broadband Operation, DC–18 GHz Source ■ 0.25 µm Ti/Pd/Au Gates
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Original
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AFM06P3-212,
AFM06P3-213
6/99A
80846
pt 8819
MESFET S parameter
ka band gaas MESfet
ka band gaas mesfet Package
ma 8920
pt 2358
AFM06P3-212
AFM06P3-213
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PDF
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pt 23131
Abstract: 80846
Text: Ka Band Power GaAs MESFET Chips AFM06P2-212, AFM06P2-213 Features 213 • 22 dBm Output Power @ 18 GHz Drain Source ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% Source Gate Drain ■ Broadband Operation, DC–18 GHz Source ■ 0.25 µm Ti/Pd/Au Gates
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Original
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AFM06P2-212,
AFM06P2-213
6/99A
AFM06P2-213
pt 23131
80846
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PDF
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pt 11400
Abstract: kaba
Text: [□Alpha 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Features • Broad Coverage of Ka-Band ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 GHz ■ Dual Drain Bias ■ 0.25 ¡xm Ti/Pt/Au Gates ■ Passivated Surface Description Alpha’s three-stage reactively-matched Ka-band
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OCR Scan
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AA038P1-00
pt 11400
kaba
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PDF
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Untitled
Abstract: No abstract text available
Text: Ka-Band Power GaAs MESFET AFM04P2-00 Chip Layout Features • 21 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, DC-^0 GHz ■ 0.25 xm Ti/Pt/Au Gates ■ Passivated Surface
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OCR Scan
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AFM04P2-00
AFM04P2-00
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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PDF
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am/PJ 0419
Abstract: No abstract text available
Text: ESAlpha Ka Band Power GaAs MESFET Chip AFM06P2-000 Features • 22.5 dBm Output Power @ 18 GHz ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% ■ Broadband Operation, D C -40 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface
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OCR Scan
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AFM06P2-000
AFM06P2-000
6/99A
am/PJ 0419
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PDF
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PJ 0349
Abstract: PJ 0459 jc 817 k MESFET S parameter pj 936 AFM04P2-000 S-12 ka 3525 ka 3525 a 149-188
Text: ESAlpha Ka Band Power GaAs MESFET Chip AFM04P2-000 Features • 21 dBm Output Power @ 18 GHz ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -40 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface
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OCR Scan
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AFM04P2-000
DC-40
AFM04P2-000
Through-subs151
6/99A
PJ 0349
PJ 0459
jc 817
k MESFET S parameter
pj 936
S-12
ka 3525
ka 3525 a
149-188
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PDF
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XDL13.567968
Abstract: 6/18/XDL13.567968
Text: El]Alpha Ka-Band Power GaAs MESFET AFM06P2-000 Features • 22.5 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 23% ■ Broadband Operation, DC-40 GHz ■ 0.25 |im Ti/Pt/Au Gates ■ Passivated Surface
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OCR Scan
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AFM06P2-000
DC-40
AFM06P2-000
XDL13.567968
6/18/XDL13.567968
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PDF
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Untitled
Abstract: No abstract text available
Text: ESAlpha Ka Band Power GaAs MESFET Chips AFM06P3-212, AFM06P3-213 Features 213 • 22 dBm Output Power @ 18 GHz ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% ■ Broadband Operation, D C -18 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface
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OCR Scan
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AFM06P3-212,
AFM06P3-213
6/99A
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PDF
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kaba
Abstract: 149-188
Text: Ka-Band Power GaAs MESFET 61Alpha AFM04P2-000 Features • 21 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -4 0 GHz ■ 0 .25 jj.m Ti/Pt/Au Gates ■ Passivated Surface
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OCR Scan
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AFM04P2-000
61Alpha
kaba
149-188
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PDF
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PJ 0519
Abstract: gm 4511 am/PJ 0529 Characteristic of mesfet AFM08P2-000 S-12 am/PJ 0519
Text: ESAlpha Ka Band Power GaAs MESFET Chip A F M 08P 2-000 Features • 24 dBm Output Power @ 18 GHz ■ High Associated Gain, 8.5 dB @ 18 GHz ■ High Power Added Efficiency, 20% ■ Broadband Operation, D C -40 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface
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OCR Scan
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AFM08P2-000
DC-40
AFM08P2-000
6/99A
PJ 0519
gm 4511
am/PJ 0529
Characteristic of mesfet
S-12
am/PJ 0519
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bOE » • 7 ^ 4 1 4 2 0D12012 STfi «SflGK gj HARRIS HMF-03400 Ku-Ka BAND GaAs FET PRELIMINARY DATA SHEET May 1992 Features • 0.25 Micron Gate Length • Ti/Pt/Au Metallization Enhances Durability and Reliability • Optimized for High Frequency
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OCR Scan
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0D12012
HMF-03400
HMF-03400
leng47
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PDF
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Untitled
Abstract: No abstract text available
Text: □ A lp h a Ka-Band Power GaAs MESFET AFM08P2-000 Features • 24 dBm Output Power at 18 G H z ■ High Associated Gain, 8.5 dB at 18 G H z ■ High Power Added Efficiency, 20% ■ Broadband Operation, D C -4 0 GHz ■ 0.25 j.m Ti/Pt/Au Gates ■ Passivated Surface
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OCR Scan
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AFM08P2-000
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PDF
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PT 8830
Abstract: No abstract text available
Text: Ka-Band Power GaAs MESFET AFM04P2-00 Features Chip Layout • 21 dBm Output Power at 18 G H z ■ High Associated Gain, 9 dB at 18 G H z ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -4 0 G H z ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface
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OCR Scan
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AFM04P2-00
MA01801
PT 8830
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PDF
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XDL13.567968
Abstract: max2705 0/XDL13.567968
Text: Ka-Band Power GaAs MESFET EEAlpha AFM06P2-00 Features Chip Layout • 22.5 dBm Output Power at 18 G H z ■ High Associated Gain, 9 dB at 18 G H z ■ High Power Added Efficiency, 23% ■ Broadband Operation, D C -4 0 G H z ■ 0.25 nm Ti/Pt/Au Gates ■ Passivated Surface
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OCR Scan
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AFM06P2-00
osc138
XDL13.567968
max2705
0/XDL13.567968
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PDF
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4511 gm
Abstract: gm 4511 AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10
Text: ^ Alpha Ka-Band Power GaAs MESFET AFM08P2-00 Chip Layout Features • 24 dBm Output Power at 18 G H z ■ High Associated Gain, 8.5 dB at 18 G H z ■ High Power Added Efficiency, 20% ■ Broadband Operation, D C -4 0 G H z ■ 0.25 |un Ti/Pt/Au Gates ■
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OCR Scan
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AFM08P2-00
DC-40
AFM08P2-00
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
4511 gm
gm 4511
AD004T2-00
AD004T2-11
AE002M2-29
AK006R2-00
AK006R2-01
AK006R2-10
AS006M1-01
AS006M1-10
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PDF
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Ablebond 84-1*SR4
Abstract: No abstract text available
Text: 30-35 GHz GaAs EBAlpha MMIC Driver Amplifier AA035P3-00 Features • Broad Coverage of Ka-Band ■ 18 dB Small Signal Gain ■ P1 dB = 17 dBm at 35 GHz ■ Self-Bias Design ■ Low Power Consumption, 260 mA, 6V Typical ■ 0.25 |iim Ti/Pt/Au Gates ■ Passivated Surface
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OCR Scan
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AA035P3-00
AA035P3-00
Ablebond 84-1*SR4
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PDF
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19509
Abstract: 86-395
Text: Ka-Band Power GaAs MESFET AFM08P2-00 Features Chip Layout 24 dBm Output Power at 18 G H z Drain J a High Associated Gain, 8.5 dB at 18 G H z S3 Il JL JL JL TT 1 1 1 L 1 1 om m pm po High Power Added Efficiency, 20% Broadband Operation, D C -4 0 G H z 0.25 jim Ti/Pt/Au Gates
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OCR Scan
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AFM08P2-00
19509
86-395
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PDF
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