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    K8A55D Price and Stock

    Toshiba America Electronic Components TK8A55DA(STA4,Q,M)

    MOSFET N-CH 550V 7.5A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK8A55DA(STA4,Q,M) Tube 48 1
    • 1 $2.43
    • 10 $2.43
    • 100 $2.43
    • 1000 $0.78958
    • 10000 $0.715
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    Mouser Electronics TK8A55DA(STA4,Q,M)
    • 1 $2.18
    • 10 $2.03
    • 100 $1
    • 1000 $0.723
    • 10000 $0.715
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    Toshiba America Electronic Components TK8A55DA(STA4

    Trans MOSFET N-CH 550V 7.5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK8A55DA(STA4,Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK8A55DA(STA4 Tube 32 Weeks 50
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    • 100 $0.85228
    • 1000 $0.7722
    • 10000 $0.7722
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    Toshiba America Electronic Components TK8A55DA(STA4QM)

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    Bristol Electronics TK8A55DA(STA4QM) 145
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    K8A55D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k8a55da

    Abstract: TK8A55DA K8A55D k8a55 TK8A55D
    Text: K8A55DA 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K8A55DA ○ スイッチングレギュレータ用 単位: mm : Vth = 2.0～4.0 V (VDS = 10 V, ID = 1 mA) 1.14 ± 0.15 0.69 ± 0.15 Ф0.2 M A 絶対最大定格 (Ta = 25℃)


    Original     		TK8A55DA k8a55da TK8A55DA K8A55D k8a55 TK8A55D PDF

    TK8A55DA

    Abstract: No abstract text available
    Text: K8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K8A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		TK8A55DA TK8A55DA PDF

    TK8A55DA

    Abstract: k8a55da
    Text: K8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 Ω(typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		TK8A55DA TK8A55DA k8a55da PDF

    k8a55da

    Abstract: TK8A55DA K8A55D k8a55 TK8A55D TK8A55
    Text: K8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 Ω(typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		TK8A55DA k8a55da TK8A55DA K8A55D k8a55 TK8A55D TK8A55 PDF