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    Samsung Semiconductor K7A403609B-QI20T

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    Bristol Electronics K7A403609B-QI20T 490
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    Samsung Semiconductor K7A403609B-QI20

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    Samsung Semiconductor K7A403609B-QC25

    128KX36 CACHE SRAM, 2.4NS, PQFP100
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    Quest Components K7A403609B-QC25 137
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    Samsung Semiconductor K7A403609B-QC20

    128K X 36 CACHE SRAM, 2.8 ns, PQFP100
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    Quest Components K7A403609B-QC20 49
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    Samsung Electro-Mechanics K7A403609B-QC25

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    K7A403609B Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K7A403609B Samsung Electronics 128Kx36/x32 & 256K x 18 Synchronous SRAM Original PDF
    K7A403609B Samsung Electronics 128Kx36 & 128Kx32 & 256K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet Original PDF
    K7A403609B K7A403209B K7A401809B Samsung Electronics 128Kx36 & 128Kx32 & 256K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet Original PDF
    K7A403609B-QC Samsung Electronics 128Kx36/x32 & 256K x 18 Synchronous SRAM Original PDF

    K7A403609B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K7A401800B-QC

    Abstract: K7A401809B K7A401809B-QC K7A403200B-QC K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC
    Text: K7A403609B K7A403209B K7A401809B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF K7A403609B K7A403209B K7A401809B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 570mA 490mA K7A401800B-QC K7A401809B K7A401809B-QC K7A403200B-QC K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC

    K7A403209B

    Abstract: K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC K7A401800B-QC K7A401809B K7A401809B-QC K7A403200B-QC
    Text: K7A403609B K7A403209B K7A401809B Preliminary 128Kx36 & 128Kx32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary


    Original     		PDF K7A403609B K7A403209B K7A401809B 128Kx36 128Kx32 256Kx18 256Kx18-Bit 570mA K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC K7A401800B-QC K7A401809B K7A401809B-QC K7A403200B-QC

    Untitled

    Abstract: No abstract text available
    Text: K7A403609B K7A403209B K7A401809B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF K7A403609B K7A403209B K7A401809B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 570mA 490mA

    K7A401809B

    Abstract: K7A403209B K7A403609B 3209B
    Text: K7A403609B K7A403209B K7A401809B 128Kx36/x32 & 256Kx18 Synchronous SRAM 4Mb Sync. Pipelined Burst SRAM Specification 100 TQFP with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K7A403609B K7A403209B K7A401809B 128Kx36/x32 256Kx18 K7A401809B K7A403209B K7A403609B 3209B

    K7A401800B

    Abstract: K7A401800B-QC K7A401809B-QC K7A403200B K7A403200B-QC K7A403209B-QC K7A403600B K7B401825B-QC K7B403225B-QC
    Text: K7A403600B K7A403200B K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF K7A403600B K7A403200B K7A401800B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 350mA 290mA K7A401800B K7A401800B-QC K7A401809B-QC K7A403200B K7A403200B-QC K7A403209B-QC K7A403600B K7B401825B-QC K7B403225B-QC

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    Untitled

    Abstract: No abstract text available
    Text: K7B403625B K7B403225B K7B401825B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF K7B403625B K7B403225B K7B401825B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 300mA 250mA

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    K7B403625B-QC

    Abstract: K7A401800B-QC K7A401809B-QC K7A403200B-QC K7A403209B-QC K7A403600B-QC K7A403609B-QC K7B401825B K7B401825B-QC K7B403625B
    Text: K7B403625B K7B401825B 128Kx36 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 256Kx18-Bit Synchronous Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters Icc ; from 300mA to 250mA at -65,


    Original     		PDF K7B403625B K7B401825B 128Kx36 256Kx18 256Kx18-Bit 300mA 250mA 280mA 230mA K7B403625B-QC K7A401800B-QC K7A401809B-QC K7A403200B-QC K7A403209B-QC K7A403600B-QC K7A403609B-QC K7B401825B K7B401825B-QC K7B403625B

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20

    transistor GW 93 H

    Abstract: K7B401825B K7B403625B
    Text: K7B403625B K7B401825B 128Kx36 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 256Kx18-Bit Synchronous Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters Icc ; from 300mA to 250mA at -65,


    Original     		PDF K7B403625B K7B401825B 128Kx36 256Kx18 256Kx18-Bit 300mA 250mA 280mA 230mA transistor GW 93 H K7B401825B K7B403625B

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    Untitled

    Abstract: No abstract text available
    Text: K7A403600B K7A403200B K7A401800B Preliminary 128Kx36 & 128Kx32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary


    Original     		PDF K7A403600B K7A403200B K7A401800B 128Kx36 128Kx32 256Kx18 256Kx18-Bit 350mA

    K7A401800B-QC

    Abstract: K7A401809B-QC K7A403200B-QC K7A403201B K7A403201B-QC K7A403209B-QC K7A403601B K7B401825B-QC K7B403225B-QC
    Text: K7A403601B K7A403201B Preliminary 128Kx36 & 128Kx32 Synchronous SRAM Document Title 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF K7A403601B K7A403201B 128Kx36 128Kx32 128Kx32-Bit 350mA 290mA 330mA 270mA K7A401800B-QC K7A401809B-QC K7A403200B-QC K7A403201B K7A403201B-QC K7A403209B-QC K7A403601B K7B401825B-QC K7B403225B-QC

    K7A401800B-QC

    Abstract: K7A401809B-QC K7A403200B-QC K7A403201B K7A403201B-QC K7A403209B-QC K7A403601B K7B401825B-QC K7B403225B-QC
    Text: K7A403601B K7A403201B 128Kx36/x32 Synchronous SRAM Document Title 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters Icc ; from 350mA to 290mA at -16,


    Original     		PDF K7A403601B K7A403201B 128Kx36/x32 128Kx36 128Kx32-Bit 350mA 290mA 330mA 270mA 300mA K7A401800B-QC K7A401809B-QC K7A403200B-QC K7A403201B K7A403201B-QC K7A403209B-QC K7A403601B K7B401825B-QC K7B403225B-QC

    K7A401800B-QC

    Abstract: K7A401809B-QC K7A403200B-QC K7A403209B-QC K7B401825B K7B401825B-QC K7B403225B K7B403225B-QC K7B403625B
    Text: K7B403625B K7B403225B K7B401825B Preliminary 128Kx36 & 128Kx32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF K7B403625B K7B403225B K7B401825B 128Kx36 128Kx32 256Kx18 256Kx18-Bit 300mA K7A401800B-QC K7A401809B-QC K7A403200B-QC K7A403209B-QC K7B401825B K7B401825B-QC K7B403225B K7B403225B-QC K7B403625B

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe