Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K6T4008 Search Results

    SF Impression Pixel

    K6T4008 Price and Stock

    Samsung Semiconductor K6T4008V1B-VB70000

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics K6T4008V1B-VB70000 3,129
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components K6T4008V1B-VB70000 2,503
    • 1 $14.58
    • 10 $14.58
    • 100 $14.58
    • 1000 $7.29
    • 10000 $7.29
    		Buy Now

    Samsung Semiconductor K6T4008V1C-MF70000

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics K6T4008V1C-MF70000 613
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Samsung Semiconductor K6T4008V1C-MF70T00

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics K6T4008V1C-MF70T00 613
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Samsung Semiconductor K6T4008V1C-MF70

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics K6T4008V1C-MF70 613
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    ComSIT USA K6T4008V1C-MF70 216
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Samsung Semiconductor K6T4008V1C-VF70000

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics K6T4008V1C-VF70000 589
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Find more K6T4008 price and stock on Findchips.com

    K6T4008 Datasheets (116)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K6T4008C Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-B Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-DB55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-DB70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-DL55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-DL70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-F Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B Family Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GB55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GB70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GF55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GF70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GL55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GL70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GP55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GP70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-MB55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-MB70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF

    K6T4008 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K6T4008V1B-VF70

    Abstract: Improved MF10 32-TSOP2-R
    Text: K6T4008V1B, K6T4008U1B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product


    Original     		PDF K6T4008V1B, K6T4008U1B 512Kx8 KM68U4000B KM68V4000B K6T4008V1B KM68U4000B K6T4008U1B K6T4008V1B-VF70 Improved MF10 32-TSOP2-R

    K6T4008V1C-VF70

    Abstract: K6T4008U1C K6T4008V1C K6T4008V1C-B KM68U4000C
    Text: K6T4008V1C, K6T4008U1C Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft January 13, 1998 Advance 0.1 Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns


    Original     		PDF K6T4008V1C, K6T4008U1C 512Kx8 KM68U4000C 85/100ns 70/85/100ns 32-TSOP1-0820 32-TSOP1-0813 K6T4008V1C-VF70 K6T4008V1C K6T4008V1C-B KM68U4000C

    K6T4008C1B-DB70

    Abstract: K6T4008C1B-GL70 K6T4008C1B K6T4008C1B-B K6T4008C1B-F K6T4008C1B-L K6T4008C1B-P K6T4008C1BDL70 K6T4008C1B-VB70 k6t4008c1b-gb55
    Text: CMOS SRAM K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA


    Original     		PDF K6T4008C1B 512Kx8 15/35mA 10/45mA 100pF 70/100ns 55/70ns 047MAX K6T4008C1B-DB70 K6T4008C1B-GL70 K6T4008C1B-B K6T4008C1B-F K6T4008C1B-L K6T4008C1B-P K6T4008C1BDL70 K6T4008C1B-VB70 k6t4008c1b-gb55

    K6T4008U2C-ZF70

    Abstract: K6T4008U2C K6T4008U2C-F K6T4008U2C-ZF10 K6T4008U2C-ZF85 K6T4008V2C
    Text: K6T4008V2C, K6T4008U2C Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft December 3, 1998 Preliminary 1.0 Finalize April 28, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.


    Original     		PDF K6T4008V2C, K6T4008U2C 512Kx8 25/Typ. 45/Typ. 68/Typ. K6T4008U2C-ZF70 K6T4008U2C-F K6T4008U2C-ZF10 K6T4008U2C-ZF85 K6T4008V2C

    K6T4008C1C Family

    Abstract: K6T4008C1C-GL70 K6T4008C1C-MB55 MF55 Type K6T4008C1C K6T4008C1C-B K6T4008C1C-F K6T4008C1C-L K6T4008C1C-P 512Kx8 bit Low Power CMOS Static RAM
    Text: CMOS SRAM K6T4008C1C Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 20,1998 Preliminary 1.0 Finalize April 12, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6T4008C1C 512Kx8 512Kx8 047MAX K6T4008C1C Family K6T4008C1C-GL70 K6T4008C1C-MB55 MF55 Type K6T4008C1C-B K6T4008C1C-F K6T4008C1C-L K6T4008C1C-P 512Kx8 bit Low Power CMOS Static RAM

    K6T4008U2C-ZF10

    Abstract: No abstract text available
    Text: K6T4008V2C, K6T4008U2C Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft December 3, 1998 Preliminary 1.0 Finalize April 28, 1999 Final Revise - Improved VOH output high voltage from 2.2V to 2.4V.


    Original     		PDF K6T4008V2C, K6T4008U2C 512Kx8 25/Typ. 45/Typ. 68/Typ. K6T4008U2C-ZF10

    K6T4008C1C-DB55

    Abstract: K6T4008C1C-DB70 K6T4008C1C-GL70 K6T4008C1C-VB70 A13285 K6T4008C1C-GB70 K6T4008C1C-MB55
    Text: CMOS SRAM K6T4008C1C Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 20,1998 Preliminary 1.0 Finalize April 12, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6T4008C1C 512Kx8 512Kx8 047MAX K6T4008C1C-DB55 K6T4008C1C-DB70 K6T4008C1C-GL70 K6T4008C1C-VB70 A13285 K6T4008C1C-GB70 K6T4008C1C-MB55

    VF10

    Abstract: K6T4008V1B
    Text: K6T4008V1B, K6T4008U1B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product


    Original     		PDF K6T4008V1B, K6T4008U1B 512Kx8 KM68U4000B VF10 K6T4008V1B

    K6T4008C1B-DB70

    Abstract: K6T4008C1B-DL70 K6T4008C1B-GL55
    Text: CMOS SRAM K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA


    Original     		PDF K6T4008C1B 512Kx8 15/35mA 10/45mA 100pF 70/100ns 55/70ns 047MAX K6T4008C1B-DB70 K6T4008C1B-DL70 K6T4008C1B-GL55

    K6T4008V1C-GB70

    Abstract: K6T4008V1C-VF70 mf10
    Text: K6T4008V1C, K6T4008U1C Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft January 13, 1998 Advance 0.1 Revisied - Speed bin change KM68U4000C: 85/100ns → 70/85/100ns


    Original     		PDF K6T4008V1C, K6T4008U1C 512Kx8 KM68U4000C: 85/100ns 70/85/100ns 32-TSOP1-0820 32-TSOP1-0813 32-TSOP1-0820 K6T4008V1C-GB70 K6T4008V1C-VF70 mf10

    Untitled

    Abstract: No abstract text available
    Text: K6T4008S1C Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft June 15, 1998 Preliminary 1.0 Finalize April 17, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6T4008S1C 512Kx8

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    lh62256

    Abstract: 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C UPD43256
    Text: Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns and 85ns standard speeds Basic Part # HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed s


    Original     		PDF HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 HM628128 K6T1008C2 lh62256 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    J32CG

    Abstract: 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4
    Text: 1 2 4 3 5 6 7 TABLE OF CONTENTS F F PAGE 02 - BLOCK DIAGRAM PAGE 03 - 750GX ADDRESS/DATA BUSSES PAGE 04 - 750GX CONTROLS AND GROUND PAGE 05 - 750GX POWER AND DECOUPLING PAGE 06 - TSI108 PROCESSOR BUS INTERFACE PAGE 07 - TSI108 MEMORY INTERFACE PAGE 08 - DDR2 DIMM CONNECTOR SLOT 0


    Original     		PDF 750GX TSI108 RS232 NC7SZ00 J32CG 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4

    am29f010b-70ef

    Abstract: A29010-70F AM29F040B-55JF AM29F040B-90jf Pm25LV512A am29f800bb-70ef S29AL004D55TFI02 AM29F040B-90JI AM29F010B70JF tc55257 cross reference
    Text: Cross Reference Memory IC's and More www.amictechnology.com part number AMIC part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29F002B AM29F002BB-120JF AM29F002BB-55JD AM29F002BB-90EI


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B A29F002 am29f010b-70ef A29010-70F AM29F040B-55JF AM29F040B-90jf Pm25LV512A am29f800bb-70ef S29AL004D55TFI02 AM29F040B-90JI AM29F010B70JF tc55257 cross reference

    TSOP44 Package

    Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
    Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments


    Original     		PDF

    C495 transistor

    Abstract: BCM5461KFB bcm5461 mosfet power totem pole CIRCUIT IBM powerPC schematics 750 RC28F128 abb c461 2N7000 B15 b4 c346 diode c343 diode
    Text: Title Page PowerPC 750CL Tsi109 Evaluation Board Schematics Preliminary August 01, 2006 Copyright and Disclaimer Copyright International Business Machines Corporation 2006 All Rights Reserved Printed in the United States of America October 2006 The following are trademarks of International Business Machines Corporation in the United States, or other countries, or


    Original     		PDF 750CL Tsi109 warrantZ00 TL7705ACPSR FDS6680S TPS73625 41K7339 41K7339 C495 transistor BCM5461KFB bcm5461 mosfet power totem pole CIRCUIT IBM powerPC schematics 750 RC28F128 abb c461 2N7000 B15 b4 c346 diode c343 diode

    C495 transistor

    Abstract: 2N7000 B15 BCM5461 2-1437590-2 abb c461 c418 FET 2n7000 b33 EN10B transistor C458 b4 c346 diode
    Text: Title Page PowerPC 750CL Tsi110 Evaluation Board Schematics February 05, 2007 Copyright and Disclaimer Copyright International Business Machines Corporation 2007 All Rights Reserved Printed in the United States of America March 2007 The following are trademarks of International Business Machines Corporation in the United States, or other countries, or


    Original     		PDF 750CL Tsi110 FDS6680S TL7705ACPSR TPS73625 41K7363 750CL 41K7363 C495 transistor 2N7000 B15 BCM5461 2-1437590-2 abb c461 c418 FET 2n7000 b33 EN10B transistor C458 b4 c346 diode

    M5M418165

    Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
    Text: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16


    Original     		PDF Q4--2000 1Mx18 512Kx36 SE-597 x2255 M5M418165 NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620

    UM62256EM-70LL

    Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
    Text: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD43256B-B PD43256BGU-70LL PD43256BGW-70 PD441000L-B PD442000L-B UM62256EM-70LL UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723

    CYPRESS SAMSUNG CROSS REFERENCE

    Abstract: TC55V400-70 toshiba 32k*8 sram TC55257DI-L-70 tbb1458b BS62LV1024-70 BS62UV1024-15 BS62UV256-15 K6F8008S2M BS62LV4005-70
    Text: 7700 Irvine Center Dr. STE: 420 Irvine, CA 92618 Contact: Lena Patel email: [email protected] Phone Number: 949-789-6274 Fax Number: 949-789-6277 Website: www.brilliancesemi.com SRAM CROSS REFERENCE Memory Size Operating Voltage SAMSUNG 1.2 ~ 2.4V 1.8 ~ 3.6V


    Original     		PDF K6Y0808C1D BS62XV1024-25 BS62UV1024-15 BS62LV1024-70 BS62XV2000-25 BS62UV2000-15 BS62LV2000-10 BS62LV2000-70 BS62XV256-25 32Kx8 CYPRESS SAMSUNG CROSS REFERENCE TC55V400-70 toshiba 32k*8 sram TC55257DI-L-70 tbb1458b BS62LV1024-70 BS62UV1024-15 BS62UV256-15 K6F8008S2M BS62LV4005-70

    um61256

    Abstract: um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245
    Text: Cross Reference Your Memory Provider part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245

    um61256

    Abstract: hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16
    Text: Cross Reference Your Memory Provider Part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B AM29F010


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16