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Samsung Semiconductor K4S641632K-UC75
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Bristol Electronics	K4S641632K-UC75		183			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	K4S641632K-UC75		140			1 $9 10 $9 100 $5.55 1000 $5.55 10000 $5.55	Buy Now
Samsung Semiconductor K4S641632KUC75 64MBIT K-DIE SDRAM Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54
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ComSIT USA	K4S641632KUC75		894			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Electronics Co. Ltd K4S641632K-UC75 Electronic Component
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ComSIT USA	K4S641632K-UC75		501			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	K4S641632K-UC75		3,031			1 - 10 - 100 $2.174 1000 $1.884 10000 $1.884	Buy Now
Samsung Electronics Co. Ltd K4S641632K-UC75T SD 4Mx16 PC133
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Win Source Electronics	K4S641632K-UC75T		4,100			1 - 10 - 100 $2.174 1000 $1.884 10000 $1.884	Buy Now

K4S641632KUC75 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K4S641632K-UC75		Samsung Electronics	64Mb K-die SDRAM		Original	PDF
K4S641632K-UC75000		Samsung Electronics	64Mb K-die SDRAM		Original	PDF

K4S641632KUC75 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
K4S641632K-UC75 Abstract: h8sx K4S641632K R1LV1616RSD-7SR samsung BCK0 Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Cluster Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in cluster transfer mode.	Original	PDF	H8SX/1668R H8SX/166products REJ06B0694-0100/Rev K4S641632K-UC75 h8sx K4S641632K R1LV1616RSD-7SR samsung BCK0
h8sx Abstract: R1LV1616RSD-7SR K4S641632K-UC75 Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Repeat Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in repeat transfer mode.	Original	PDF	H8SX/1668R H8SX/1668R REJ06B0693-0100/Rev h8sx R1LV1616RSD-7SR K4S641632K-UC75
K4S641632K-UC75 Abstract: h8sx R1LV1616RSD-7SR K4S641632KUC75 Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Normal Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in normal transfer mode.	Original	PDF	H8SX/1668R H8SX/1668Rproducts REJ06B0691-0100/Rev K4S641632K-UC75 h8sx R1LV1616RSD-7SR K4S641632KUC75
K4S641632K-UC75 Abstract: samsung k4s641632k-uc75 h8sx R1LV1616RSD-7SR Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Block Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in block transfer mode.	Original	PDF	H8SX/1668R H8SX/1668R REJ06B0692-0100/Rev K4S641632K-UC75 samsung k4s641632k-uc75 h8sx R1LV1616RSD-7SR
K4S641632K-UC75 Abstract: R1LV1616RSD-7SR LV161 h8sx Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Extended Repeat Area Function Introduction The extended repeat area function of the EXDMAC in normal transfer mode is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area.	Original	PDF	H8SX/1668R REJ06B0745-0100/Rev K4S641632K-UC75 R1LV1616RSD-7SR LV161 h8sx
K4S641632K-UC75 Abstract: SAMSUNG K4S641632K-UC75 K4S641632K R1LV1616RSD-7SR h8sx uc75 LV1616RSD-7SR Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Offset Addition Introduction Data are transferred by the EXDMAC function from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area using normal transfer mode where the transfer address is updated by adding a specified offset.	Original	PDF	H8SX/1668R REJ06B0695-0100/Rev K4S641632K-UC75 SAMSUNG K4S641632K-UC75 K4S641632K R1LV1616RSD-7SR h8sx uc75 LV1616RSD-7SR
K4S641632K-UC75 Abstract: K4S641632K _INITSCT Text: APPLICATION NOTE H8SX Family Synchronous DRAM Operation after Cancellation of Deep Software Standby Mode Introduction This application note describes the method for accessing synchronous DRAM SDRAM after cancellation of deep software standby mode. This method makes it possible to avoid problems related to the period of Bφ and SDRAMφ output instability	Original	PDF	H8SX/1668R REJ06B0814-0100/Rev K4S641632K-UC75 K4S641632K _INITSCT