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    Samsung Semiconductor K4S560832B-TC1H

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    Samsung Semiconductor K4S560832B-TC75

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    Samsung Semiconductor K4S560832A-TC75

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    Samsung Semiconductor K4S560832E-TC75

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    Samsung Semiconductor K4S560832J-UC75

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    K4S560832 Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S560832A Samsung Electronics 256Mbit SDRAM 8M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S560832A-TC/L1H Samsung Electronics 8M x 8-Bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. Original PDF
    K4S560832A-TC/L1L Samsung Electronics 8M x 8-Bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. Original PDF
    K4S560832A-TC/L75 Samsung Electronics 8M x 8-Bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. Original PDF
    K4S560832A-TC/L80 Samsung Electronics 8M x 8-Bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL. Original PDF
    K4S560832B Samsung Electronics 256Mbit SDRAM 8M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S560832B-TC/L1H Samsung Electronics 8M x 8-Bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. Original PDF
    K4S560832B-TC/L1L Samsung Electronics 8M x 8-Bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. Original PDF
    K4S560832B-TC/L75 Samsung Electronics 8M x 8-Bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. Original PDF
    K4S560832C Samsung Electronics 256Mbit SDRAM 8M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S560832C-TC/L1H Samsung Electronics 8M x 8-Bit x 4 banks synchronous DRAM LVTTL, 100MHz Original PDF
    K4S560832C-TC/L1L Samsung Electronics 8M x 8-Bit x 4 banks synchronous DRAM LVTTL, 100MHz Original PDF
    K4S560832C-TC/L75 Samsung Electronics 8M x 8-Bit x 4 banks synchronous DRAM LVTTL, 133MHz Original PDF
    K4S560832C-TC/L7C Samsung Electronics 8M x 8-Bit x 4 banks synchronous DRAM LVTTL, 133MHz Original PDF
    K4S560832D Samsung Electronics 256Mbit SDRAM 8M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S560832D Samsung Electronics 8M x 8-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S560832D-NC/L1H Samsung Electronics 8M x 8-Bit x 4 banks synchronous DRAM LVTTL, 100MHz Original PDF
    K4S560832D-NC/L1L Samsung Electronics 8M x 8-Bit x 4 banks synchronous DRAM LVTTL, 100MHz Original PDF
    K4S560832D-NC/L75 Samsung Electronics 8M x 8-Bit x 4 banks synchronous DRAM LVTTL, 133MHz Original PDF
    K4S560832D-NC/L7C Samsung Electronics 8M x 8-Bit x 4 banks synchronous DRAM LVTTL, 133MHz Original PDF

    K4S560832 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: K4S560832C CMOS SDRAM 256Mbit SDRAM Extended Temp Support 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept.2001 K4S560832C CMOS SDRAM


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    PDF K4S560832C 256Mbit 100MHz A10/AP

    Untitled

    Abstract: No abstract text available
    Text: K4S560832C CMOS SDRAM 256Mbit SDRAM Super low power 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.5 Nov. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.5 Nov. 2001 K4S560832C CMOS SDRAM Revision History


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    PDF K4S560832C 256Mbit 100MHz A10/AP

    Untitled

    Abstract: No abstract text available
    Text: K4S560832C CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S560832C CMOS SDRAM Revision History Revision 0.0 Mar. 06, 2001


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    PDF K4S560832C 256Mbit A10/AP

    K4S560432B-TC75

    Abstract: M390S6450BT1-C75 32MX72 64MX4 PC133 SDRAM registered DIMM 512MB samsung
    Text: SERIAL PRESENCE DETECT PC133 Registered DIMM PC133 Registered SDRAM DIMM 168pin Type SPD Specification REV. 0 May. 2000 REV. 0 May. 2000 SERIAL PRESENCE DETECT PC133 Registered DIMM M390S3253BT1-C75 •Organization : 32MX72 •Composition : 32MX8 * 9ea •Used component part # : K4S560832B-TC75


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    PDF PC133 168pin) M390S3253BT1-C75 32MX72 32MX8 K4S560832B-TC75 8K/64ms 128bytes K4S560432B-TC75 M390S6450BT1-C75 32MX72 64MX4 PC133 SDRAM registered DIMM 512MB samsung

    K4S561632N

    Abstract: K4S561632N-LC K4S560832N-LC K4S560832N K4S560432N-LC K4S560432N K4S560832Nlc K4S5604
    Text: Rev. 1.0, Apr. 2010 K4S560432N K4S560832N K4S561632N 256Mb N-die SDRAM 54TSOP II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    PDF K4S560432N K4S560832N K4S561632N 54TSOP 256Mb A10/AP K4S561632N K4S561632N-LC K4S560832N-LC K4S560432N-LC K4S560832Nlc K4S5604

    K4S560832

    Abstract: No abstract text available
    Text: K4S560832C CMOS SDRAM 256Mbit SDRAM Industrial Temp Support 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S560832C CMOS SDRAM


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    PDF K4S560832C 256Mbit 100MHz A10/AP K4S560832

    K4S561632J-UC

    Abstract: K4S561632J K4S561632J-UL K4S561632J-U K4S561632JUC K4S560832J K4S560832J-UC k4s560832j-u
    Text: K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K4S560432J K4S560832J K4S561632J 256Mb A10/AP K4S561632J-UC K4S561632J K4S561632J-UL K4S561632J-U K4S561632JUC K4S560832J K4S560832J-UC k4s560832j-u

    K4S561632J

    Abstract: k4s560832J K4S561632J-UC K4S560432J k4s561632j-uc/l75 K4S561632J-UL K4S561632 K4S560832J-UC
    Text: K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K4S560432J K4S560832J K4S561632J 256Mb A10/AP K4S561632J k4s560832J K4S561632J-UC K4S560432J k4s561632j-uc/l75 K4S561632J-UL K4S561632 K4S560832J-UC

    K4S560832C

    Abstract: RA12 Synchronous DRAM and Samsung
    Text: K4S560832C CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S560832C CMOS SDRAM Revision History Revision 0.0 Mar. 06, 2001


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    PDF K4S560832C 256Mbit 100MHz A10/AP K4S560832C RA12 Synchronous DRAM and Samsung

    K4S561632J

    Abstract: K4S561632J-UC
    Text: K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


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    PDF K4S560432J K4S560832J K4S561632J 256Mb A10/AP K4S561632J K4S561632J-UC

    K4S560832A

    Abstract: RA12
    Text: K4S560832A CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Sep. 1999 K4S560832A CMOS SDRAM 8M x 8Bit x 4 Banks Synchronous DRAM


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    PDF K4S560832A 256Mbit K4S560832A A10/AP RA12

    K4S560832B

    Abstract: RA12
    Text: K4S560832B CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May.2000 K4S560832B CMOS SDRAM Revision 0.1 March 10, 2000


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    PDF K4S560832B 256Mbit 133MHz" A10/AP K4S560832B RA12

    Untitled

    Abstract: No abstract text available
    Text: K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original
    PDF K4S560432J K4S560832J K4S561632J 256Mb A10/AP

    K4S560832D

    Abstract: RA12
    Text: K4S560832D CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 May. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 May. 2002 K4S560832D CMOS SDRAM Revision History Revision 0.0 May. , 2002


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    PDF K4S560832D 256Mbit K4S560832D A10/AP RA12

    K4S560832D

    Abstract: RA12
    Text: K4S560832D CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Jan. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jan. 2002 K4S560832D CMOS SDRAM Revision History Revision 0.0 Jan. , 2002


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    PDF K4S560832D 256Mbit K4S560832D A10/AP RA12

    PC133 SDRAM registered DIMM 512MB samsung

    Abstract: support pc133 sdram samsung date code 32MX72 64MX4 M390S6450AT1-C75
    Text: SERIAL PRESENCE DETECT PC133 Registered DIMM PC133 Registered SDRAM DIMM 168pin Type SPD Specification REV. 0 Sep. 1999 REV. 0 Sep. 1999 SERIAL PRESENCE DETECT PC133 Registered DIMM M390S3253AT1-C75 •Organization : 32MX72 •Composition : 32MX8 * 9ea •Used component part # : K4S560832A-TC75


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    PDF PC133 168pin) M390S3253AT1-C75 32MX72 32MX8 K4S560832A-TC75 8K/64ms 128bytes PC133 SDRAM registered DIMM 512MB samsung support pc133 sdram samsung date code 32MX72 64MX4 M390S6450AT1-C75

    M366S6453DTS

    Abstract: No abstract text available
    Text: M366S6453DTS PC133/PC100 Unbuffered DIMM M366S6453DTS SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S6453DTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF M366S6453DTS PC133/PC100 M366S6453DTS 64Mx64 32Mx8, 400mil 168-pin

    K4S560832E

    Abstract: K4S561632E
    Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.2 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 February 2004


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    PDF 128MB, 256MB, 512MB 144pin 256Mb 64-bit K4S560832E K4S561632E

    M374S6453CTS

    Abstract: No abstract text available
    Text: PC133/PC100 Unbuffered DIMM M374S6453CTS M374S6453CTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S6453CTS is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF PC133/PC100 M374S6453CTS M374S6453CTS 64Mx72 32Mx8, 400mil 168-pin

    M374S3253ATS

    Abstract: M374S3253CTU
    Text: M374S3253CTU PC133/PC100 Low Profile Unbuffered DIMM M374S3253ATS SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S3253CTU is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF M374S3253CTU PC133/PC100 M374S3253ATS 32Mx72 32Mx8, M374S3253CTU 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: PC133/PC100 Unbuffered DIMM M374S6453DTS M374S6453DTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S6453DTS is a 64M bit x 72 Synchronous


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    PDF PC133/PC100 M374S6453DTS M374S6453DTS 64Mx72 32Mx8, 400mil 168-pin

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


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    PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    M390S6453DT1

    Abstract: M390S6453DT1-C7A M390S6453DT1-C7C PC133 registered reference design
    Text: PC133 Registered DIMM M390S6453DT1 M390S6453DT1 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S6453DT1 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF PC133 M390S6453DT1 M390S6453DT1 64Mx72 32Mx8, 32Mx8 400mil 18-bits M390S6453DT1-C7A M390S6453DT1-C7C PC133 registered reference design

    M390S3253CTU

    Abstract: M390S3253CTU-C1H M390S3253CTU-C1L M390S3253CTU-C7A M390S3253CTU-C7C PC133 registered reference design
    Text: M390S3253CTU PC133/PC100 Low Profile Registered DIMM M390S3253CTU SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S3253CTU is a 32M bit x 72 Synchronous


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    PDF M390S3253CTU PC133/PC100 M390S3253CTU 32Mx72 32Mx8, 32Mx8 400mil 18-bits M390S3253CTU-C1H M390S3253CTU-C1L M390S3253CTU-C7A M390S3253CTU-C7C PC133 registered reference design