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    K3935 Search Results

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    K3935 Price and Stock

    Ohmite Mfg Co OK3935E-R52

    RES 39K OHM 5% 1/4W AXIAL
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    DigiKey OK3935E-R52 Cut Tape 49,749 1
    • 1 $0.12
    • 10 $0.067
    • 100 $0.0382
    • 1000 $0.02282
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    OK3935E-R52 Reel 45,000 5,000
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    Mouser Electronics OK3935E-R52 25,061
    • 1 $0.12
    • 10 $0.068
    • 100 $0.035
    • 1000 $0.018
    • 10000 $0.014
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    Newark OK3935E-R52 Cut Tape 50,000
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    OK3935E-R52 Reel 50,000
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    RS OK3935E-R52 Bulk 23 Weeks 50,000
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    Richardson RFPD OK3935E-R52 50
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    • 100 $13.58
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    Master Electronics OK3935E-R52
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    Vishay Intertechnologies 562R10TSD10

    Ceramic Disc Capacitors 1Kvolts .001uF 10%
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    TTI 562R10TSD10 Bulk 33,500 500
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    Vishay Intertechnologies CRCW0603487KFKEA

    Thick Film Resistors - SMD 1/10watt 487Kohms 1%
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    TTI CRCW0603487KFKEA Reel 20,000 5,000
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    Phoenix Contact 3044128

    DIN Rail Terminal Blocks UT 4-PE
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    TTI 3044128 Bulk 2,937 2
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    • 10 $4.2
    • 100 $3.94
    • 1000 $3.44
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    Ohmite Mfg Co B8J15KE

    Wirewound Resistors - Through Hole 8watt 15K 5% Axial
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI B8J15KE Bulk 75 25
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    • 100 $3.77
    • 1000 $3.62
    • 10000 $3.55
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    K3935 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K3935

    Abstract: 2SK3935
    Text: K3935 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ K3935 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 10 S (標準)


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    PDF 2SK3935 SC-67 2-10U1B K3935 2SK3935

    2SK3935

    Abstract: K3935
    Text: K3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3935 Switching Regulator Applications Unit: mm z Low drain-source ON resistance: RDS (ON) = 0.18 Ω (typ.) z High forward transfer admittance: |Yfs| = 10 S (typ.) z Low leakage current:


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    PDF 2SK3935 2SK3935 K3935

    K3935

    Abstract: 2SK3935 MJ10100
    Text: K3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3935 Switching Regulator Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 0.18Ω z High forward transfer admittance : |Yfs| = 10 S (typ.) (typ.) z Low leakage current : IDSS = 100 A (max) (VDS = 450 V)


    Original
    PDF 2SK3935 K3935 2SK3935 MJ10100

    K3935

    Abstract: 2sk3935
    Text: K3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3935 Switching Regulator Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 0.18Ω z High forward transfer admittance : |Yfs| = 10 S (typ.) (typ.) z Low leakage current : IDSS = 100 µA (max) (VDS = 450 V)


    Original
    PDF 2SK3935 K3935 2sk3935

    K3935

    Abstract: 2SK3935
    Text: K3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3935 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.18Ω High forward transfer admittance : |Yfs| = 10 S (typ.) (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 450 V)


    Original
    PDF 2SK3935 K3935 2SK3935